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  • American Institute of Physics (AIP)  (12)
  • PANGAEA  (3)
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  • 1
    Publication Date: 2024-01-09
    Keywords: 191-1179B; 191-1179C; Cerium; DEPTH, sediment/rock; DRILL; Drilling/drill rig; DSDP/ODP/IODP sample designation; Dysprosium; Erbium; Europium; Event label; Gadolinium; Holmium; Inductively coupled plasma - mass spectrometry (ICP-MS); Joides Resolution; Lanthanum; Leg191; Lutetium; Neodymium; North Pacific Ocean; Ocean Drilling Program; ODP; Praseodymium; Samarium; Sample code/label; Terbium; Thulium; Ytterbium
    Type: Dataset
    Format: text/tab-separated-values, 645 data points
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  • 2
    Publication Date: 2024-01-09
    Keywords: 191-1179B; 191-1179C; Aluminium oxide; Calcium oxide; Carbon, inorganic, total; Carbon, organic, total; DEPTH, sediment/rock; DRILL; Drilling/drill rig; DSDP/ODP/IODP sample designation; Event label; Iron oxide, Fe2O3; Joides Resolution; Leg191; Loss on ignition; Magnesium oxide; Manganese oxide; North Pacific Ocean; Ocean Drilling Program; ODP; Phosphorus pentoxide; Potassium oxide; Sample code/label; Sediment type; Silicon dioxide; Sodium oxide; Titanium dioxide; X-ray fluorescence (XRF)
    Type: Dataset
    Format: text/tab-separated-values, 579 data points
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  • 3
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    Unknown
    PANGAEA
    In:  Supplement to: Fukukawa, M; Takahashi, Y; Hayasaka, Yasutaka; Sakai, Y; Shimizu, Hiroshi (2004): Geochemical study of ODP Leg 191 Site 1179 sediments: direct observation of Mn and Ce oxidation states. In: Sager, WW; Kanazawa, T; Escutia, C (eds.) Proceedings of the Ocean Drilling Program, Scientific Results, College Station, TX (Ocean Drilling Program), 191, 1-24, https://doi.org/10.2973/odp.proc.sr.191.007.2004
    Publication Date: 2024-01-09
    Description: Depth profiles of major element and rare earth element (REE) abundances in sediment samples (mainly siliceous ooze and clay) recovered from Holes 1179B and 1179C at Site 1179, Ocean Drilling Program Leg 191 (41.4°N, 159.6°E) were determined. The oxidation states of Mn and Ce were determined by X-ray absorption near-edge structure. Some geochemical indicators were tested, including the MnO/TiO2 ratios, a bivariate diagram of La/Ce vs. Al2O3/(Al2O3+Fe2O3), and other discrimination diagrams. The oxidation state of Mn is reduced Mn(II) in the depth profile below 0.60 meters below seafloor (mbsf), which is consistent with relatively low and high abundances of Mn in the sediments and pore waters, respectively. It is possible that the diagenetic effect on the oxidation state and abundance of Mn makes it difficult for the MnO/TiO2 ratio to reflect the depositional environment. The normalized ratio of La and Ce does not change very much with depth, suggesting that the diagenetic effect does not affect the REE signature in the sediments. On the diagram of La/Ce vs. Al2O3/(Al2O3+Fe2O3), the sediments studied here plot at the boundary of the pelagic and continental margin fields. This suggests that continental material has contributed to the sediment to some degree, even though Site 1179 is in a pelagic region of the northwestern Pacific Ocean, 〉1600 km from Japan.
    Keywords: 191-1179B; 191-1179C; DRILL; Drilling/drill rig; Joides Resolution; Leg191; North Pacific Ocean; Ocean Drilling Program; ODP
    Type: Dataset
    Format: application/zip, 2 datasets
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 3319-3325 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Mulliken electron population analysis has been a standard feature of computer output from the quantum mechanical molecular calculation. An extension of the original analysis is proposed here. It produces a point-charge model of a molecule that retains the same electric dipole moment as calculated with the molecular wave function. The analysis offers visually more interesting information than the original Mulliken analysis. The extension can be made easily by extracting and printing out some additional numerical data usually once computed but discarded after being processed in molecular calculations.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2093-2105 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Models capturing the periodic steady-state behavior of rf capacitively coupled discharges are now commonplace. New plasma sources have been motivated by selectivity, charge-damage mitigation, and general process control needs in plasma processing of electronic materials. These new sources require models that can accurately capture the transient behavior of the plasma source. Such models are not commonplace because the behavior of transport parameters in transients is still not well understood and because the problem is inherently stiff, i.e., widely disparate time scales are important. In this paper, we present the results of an investigation of the simplest type of transient, known as a step disturbance, in a 2 cm gap parallel-plate argon discharge at 1 Torr. As examples, two classes of step transients are considered: step increases in the peak-to-peak (pp) applied voltage (300 to up to 450 V pp) and step decreases (300 to as low as 150 V pp). The resulting transients are interpreted in terms of time scales representative of electron and ion motion in the sheath, ionization dynamics, and neutral transport processes. The possibility of using these transients as a means of process identification is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2844-2848 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A microscanning electron microscope (SEM) column has been constructed as an attachment of an ultrahigh-vacuum chamber with a 70 mm diam flange to observe microstructures on a solid surface. The micro-SEM column is 26 mm diam and 140 mm long and operated in an energy range from 100 eV to 3 keV. It consists of a thermal-field-emission (TFE) gun and two magnetic lenses. The excitation of the objective lens for 3 kV electrons is 250 A T at a working distance of 10 mm. The saturated temperature of the objective lens at the excitation of 250 A T is approximately 50 °C and the vacuum of the chamber is 2×10−10 Torr. The electron probe is adjustable against a specimen position from the outside of the vacuum by movement of the SEM column with screws. The spot size of the electron probe is 100 A(ring) at 3 kV and 3000 A(ring) at 300 eV in conditions of a working distance of 10 mm and a probe current of 3×10−11 A.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3475-3477 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary electron yields depending on work function were measured for 30 species of metal in ultrahigh vacuum by electron and ion bombardment. Secondary electron yields induced by electrons at 10 keV increase with work function, while those by Ar+ ions at 3 keV decrease with increasing work function. The opposite dependencies of secondary electron yields on work function between electron and ion bombardment are discussed on the basis of the different mechanisms of secondary electron emission, i.e., kinetic and potential emission for electron and ion bombardment, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 611-613 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The contrast of the secondary electron images in scanning ion microscopy (SIM) is compared with that in scanning electron microscopy (SEM) with ultrahigh vacuum for Al, Cu, Ag, and Au metals deposited on the Si(100) clean surface. The order of the secondary electron yields as a function of the atomic number (Z2) for ion bombardment is opposite to that for electron bombardment. The brightness of the secondary electron images observed by a focused Ga+ ion beam at 30 keV decreases with increasing Z2, while that by the electron beam increases with Z2. On the other hand, the order of the total secondary ion yields in SIM increases with Z2. The secondary electron image observed by a focused Ar+-ion beam at 3 keV shows the similar contrast to that of the Ga+-ion beam. The different Z2 dependence of the secondary electron yields between SEM and SIM was quantitatively confirmed by the total secondary electron spectra and is discussed based on the range profile below the surface, and it is concluded that the decrease of the secondary electron yields in SIM is attributed to the increase of the reflected ions at the surface with increasing Z2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2333-2335 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple and sensitive detection method of Xe(1s5) excited atoms in the vicinity of a discharge wall with laser-collision induced fluorescence (LCIF) produced by evanescent wave absorption is proposed. The signal to noise (S/N) ratio was 102. The hyperfine structure (hfs) in the Xe LCIF spectra induced by resonant absorption of Xe(1s5→2p6) was confirmed to be identical with the hfs in laser absorption spectra, although the detection point (xPD) on the discharge wall was chosen independently of the position of the EW absorption (xEW). The insignificantly large fluorescence, which appeared for incident light angles to a prism larger than 4.8°, is explained by the fact that the refracted light emerged in a plasma. The Xe(1s5) number density in a dc Xe discharge, although roughly estimated, on the tube wall between the electrodes is presented. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1848-1858 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transient response of electronegative radio-frequency glow discharges is important for process control, charge free etching, and highly selective etch applications. The step response of typical electronegative process gases (silane at 1 Torr and chlorine at 100 mTorr) is studied using a drift-diffusion model for silane and a three-moment model for chlorine. The silane simulations include a blocking capacitor whereas the chlorine results do not. For the silane results with a blocking capacitor in series with the plasma, it is found that there are three types of transients. Depending on the final steady-state value of the source rf voltage, the step response can be characterized either by smooth transitions in the number densities of species in the discharge from one steady state to the next, temporary extinction of the discharge or a discharge mode characterized by temporary extinction and reignition of the discharge. In the case of silane definite thresholds separate the phenomena. The step response of the chlorine discharges is always characterized by a smooth transition from one steady state to the next. Smooth transitions from one steady state to the next in the case of step decreases in the source voltage are possible since decrease of the negative ion density in the bulk is controlled by ion–ion recombination. It appears that the temporary extinction of the discharge and natural pulsed steady state is the consequence of how the voltage is divided between the gap and the blocking capacitor during the transient and the fact that the attachment coefficient becomes larger than the ionization coefficient at low values of reduced electric field. © 1998 American Institute of Physics.
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