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  • American Institute of Physics (AIP)  (48)
  • Inter-Research  (5)
  • International Union of Crystallography  (5)
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 53-59 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model for radiative transport of electronic excitation energy in solution is presented and applied to the time-resolved and steady-state fluorescence of DPA (9, 10-diphenylanthracene) in benzene. The model predicts a nonexponential and wavelength-dependent decay at high concentrations, in agreement with experimental results. Recovered parameters, along with the time-resolved emission spectrum, are interpreted on the basis of a progression of the excitation with time farther into the cell, after the excitation pulse.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 8143-8149 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model for reversible monomer–excimer kinetics that considers the time dependence of the excimer formation rate coefficient is proposed and tested for pyrene in cyclohexanol from 25 up to 85 °C. Simultaneous analysis of the monomer and excimer experimental decay curves allows the determination of all the relevant parameters for this reaction. The diffusion coefficient follows an Arrhenius plot with activation energy of 36±1 KJ mol−1, the encounter radius varies between 7.3 and 8.9 A(ring), and the intrinsic rate constant for excimer formation varies between 2.4×109 and 1.1×1010 M−1 s−1. The intrinsic reciprocal lifetime of the excimer follows an Arrhenius plot with activation energy of 12±1 KJ mol−1, and the rate constant for excimer dissociation, determined for high temperatures (T〉55 °C) when reversibility is important, has different values depending whether geminate pair effects are considered or not in the analysis. The binding energy of pyrene excimer obtained considering pair effects (ΔH=32±2 KJ mol−1) agrees with the published values for nonviscous solvents.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1817-1824 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model for reversible monomer–excimer kinetics is developed, taking into account that different distributions of monomers around the excited ones are created by light absorption and excimer dissociation. The excimer formation rate coefficient departs from the Collins–Kimball equation owing to reversibility, originating significant deviations to Birks' kinetics in the monomer and excimer decays. The contribution of the geminate pair created by excimer dissociation on the overall kinetics is significant for low monomer concentrations and high viscosities. Simultaneous analysis of the monomer and excimer decay curves according to the model developed should allow to extract all the relevant information concerning the excimer formation diffusion controlled process.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 8048-8055 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Fluorescence depolarization by energy transfer resulting from dipole–dipole interaction (Förster type) is studied in donor–acceptor pairs of like and unlike chromophores at a fixed distance and with random and uncorrelated static orientations. For unlike chromophores, the acceptor anisotropy decay is shown to display three different extreme types of behavior. When the intrinsic decay rate of the acceptor is much faster than both the transfer rate and the donor intrinsic decay rate, the acceptor anisotropy decays from a positive value, then rises and passes through a maximum, and finally tends to a negative limiting value, yielding a zero steady-state value. The existence of a maximum is shown to be due to the peculiar relation between the orientation factor and the average angle formed by the donor and acceptor transition moments. For pairs of like chromophores, the exact anisotropy is calculated and compared with that given by an approximate treatment. It is also shown that the anisotropy of the indirectly excited partner varies with time, tending to zero, in contradiction to previous work, where it is reported to be 4% of that of the directly excited chromophore.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6545-6548 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of highly dense SnO2 ceramic varistors are believed to be caused by the existence of potential barriers at the grain boundary. A complex plane analysis technique (to eliminate the influence of trapping activity associated with the conductance term observed via depression angle of a semicircular relaxation in the complex capacitance plane), allied with an approached Mott–Schottky model, are used to demonstrate that the potential barriers at the grain boundary are Schottky-type barriers in SnO2 varistors such as those observed in the traditional ZnO varistor. © 2000 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 590-592 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In porous silicon formations there is an increase of dissolution rate at the fluorine-covered sites of the silicon surface due to the presence of excess electrons coming from oxidation of molecular hydrogen at the passivated (hydrogen-covered) sites. The dissolution rate increase in the presence of excess charge at the fluorine-covered sites is experimentally measured and a theoretical investigation is carried out by a semiempirical Hartree–Fock calculation. This spatially variable dissolution generates the porous silicon surface. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7186-7190 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence and photoluminescence of Bi12SiO20 and Bi12GeO20 samples are studied. Both kinds of samples show a dark orange central part or core. Emissions in the blue, green, and red spectral regions are observed. The 640 nm band is the predominant feature in the core emission. The evolution of this band during electron irradiation suggests possible emission mechanisms. In addition, two infrared emissions at about 915 and 1390 nm are detected. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1980-1982 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the low-temperature mobility of high-quality two-dimensional hole systems confined at the (311)A GaAs/AlxGa1−xAs interface. Variables were the thickness of the spacer layer separating the carriers from the Si dopants, and the carrier sheet density. A large anisotropy in mobility is found between the [2¯33] and [011¯] directions. While the high mobility [2¯33] direction yields results analogous to the two-dimensional electron case, we conclude that transport along [011¯] is almost entirely determined by anisotropic interface roughness scattering.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 747-749 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated submicron resonant tunneling devices from double-barrier AlGaAs/GaAs heterostructures using electron beam lithography and wet chemical etching. These devices exhibit step-like features in the current-voltage curves. We interpret these steps as arising from additional size quantization of the electronic states in the well due to in-plane lithographic confinement. Magnetotunneling experiments on these devices are reported for the first time. A simple model calculation describes well the experimental data.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1440-1442 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Liquid phase epitaxy regrowth on the edge of in situ cleaved substrates is employed to create a vertical two-dimensional electron gas in a double-barrier tunneling potential. Resonant tunneling of two-dimensional electrons through one-dimensional quantum wire subbands is unambiguously identified by negative differential resistance features in the transport characteristics. The bias positions of these features agree with simple tunneling theory estimates based on conservation laws and the calculated band alignment in the structure under bias.
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