ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (26)
  • International Union of Crystallography  (8)
  • American Chemical Society  (4)
  • Blackwell Publishing Ltd
  • 1
    Electronic Resource
    Electronic Resource
    Analysis of recombination centers in (AlxGa1−x)0.5In0.5P quaternary alloys (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4946-4949 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied nonradiative recombination centers in undoped (AlxGa1−x)0.5In0.5Pgrown by metalorganic vapor phase epitaxy using transient capacitance spectroscopy. We found three deep energy levels, including a mid-gap level. We drew an equation to get a capture cross section for minority carriers, and obtained it using isothermal capacitance transient spectroscopy measurement. The mid-gap level had an electron capture cross section of 2 × 10−10 cm2 and a hole capture cross section of 1 × 10−15 cm2. The time constant of nonradiative recombination through the mid-gap level was found to be comparable to that of radiative recombination. We concluded that the mid-gap level is an effective nonradiative recombination center that reduces photoluminescence intensity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349041
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Resistometric and Mössbauer studies on structural relaxation in (Ni,Fe)75Si10B15 metallic glasses (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2091-2099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural relaxation in (Ni,Fe)75Si10B15 metallic glasses has been studied by measuring resistivity changes and Mössbauer spectra. The sign and magnitude of resistivity changes due to the relaxation depend strongly on the Ni/Fe ratio. The isothermal resistivity changes fit well the nonlinear kinetic form, indicating that the fluctuation of local environments of Ni and Fe atoms is very large and Ni and Fe atoms in Ni-Fe-Si-B metallic glasses are mobile compared with Co and Fe atoms in Co-Fe-Si-B metallic glasses. The compositional dependence and kinetic parameters for reversible resistivity changes and Mössbauer spectra strongly support that the reversible structural relaxation corresponds to the reversible short-range ordering between Ni and Fe atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346563
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Double tunnel junctions for magnetic random access memory devices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6064-6066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optimum junction resistance and minimum tunnel magnetoresistance (TMR) ratio required for high density and high performance magnetoresistive random access memory (MRAM) devices with a TMR cell plus field effect transistor (FET) switch architecture are discussed by taking into account the variation of FET resistance causing noise. This implies that a TMR ratio over 25% at a 400 mV bias voltage and junction resistance of several tens of kilo-ohms for TMR cells are required with a signal voltage of 30 mV and a sense current of 10 μA, which leads to about 10 ns read time. This large magnetoresistance ratio at the elevated bias voltage requires low bias voltage dependence of TMR for the MRAM devices. In order to try to meet this requirement, double tunnel junctions were fabricated which possess the central ferromagnetic layer consisting of a thin discontinuous layer of hard ferromagnetic Co80Pt20 nanoparticles and insulating Al2O3 prepared by alternate sputtering of Co80Pt20 and Al2O3 targets. The maximum TMR obtained was 20.5% at room temperature for FeCo top and bottom electrodes without annealing. Bias voltage dependence of the (NiFe/CoFe)/1.5 nm Al2O3/discontinuous CoPt/2.6 nm Al2O3/(CoFe/NiFe) double tunnel junctions were revealed to be small compared to that of single junctions, the barrier of which was also fabricated by sputtering of an Al2O3 target. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372613
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Intrinsic Josephson junctions in oxygen-deficient YBa2Cu3O7−δ film deposited on a substrate step (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3740-3744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using c-axis-oriented oxygen-deficient YBa2Cu3O7−δ film deposited across a low-angle step on a SrTiO3 substrate, we successfully demonstrated intrinsic Josephson effects. In addition to several voltage jumps of large amplitudes (a few millivolts) and remarkable hysteresis on the dc current–voltage curves, we observed upturns on the current–voltage curves under microwave irradiation which appeared at increasingly high voltages with increasing microwave power. We proposed to explain this observation in terms of high-order microwave-induced Shapiro steps. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369741
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Intrinsic noise temperatures of YBa2Cu3O7−δ Josephson devices on bicrystal substrates and the upper frequency limit for their operation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6536-6538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following a method proposed by Divin and Modovets [Sov. Tech. Phys. Lett. 9, 108 (1983)], we have measured at millimeter waveband the intrinsic noise temperatures TN of YBa2Cu3O7−δ Josephson junctions or dc superconducting quantum interference devices (SQUIDs) fabricated on SrTiO3, yttria-stabilized ZrO2, or Si bicrystal substrates. Over wide ranges of physical temperatures TP and the junction's normal resistance RN, it was found that TN follows TP pretty well. This indicates that the intrinsic noise in the devices is dominated by Johnson noise. TN was also measured in cases where there is external magnetic field applied, or where there is another microwave radiation like the local oscillator in a mixer. The magnetic field or microwave radiation does not seem to affect TN in any appreciable way. To estimate the high frequency performance of the junctions on Si bicrystal substrates, direct irradiation by a far infrared laser at 1.81 THz is carried out and the clear first Shapiro step is observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363672
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Thickness dependence of magneto-optical properties in face-centered-cubic Co/Cu(001) ultrathin films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4977-4979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical Kerr spectra of ultrathin Co films grown on Cu(001) surfaces have been measured in situ. The growth mode and the crystal structure have been investigating by reflection high-energy electron diffraction observation. A 20-A(ring)-thick fcc Co grown on Cu(001) had a lateral lattice constant of 3.59±0.01 A(ring), which was about 1.4% expanded compared with that of the bulk fcc Co. There was a remarkable difference above 4 eV in ωσyz spectra between 20- and 1000-A(ring)-thick films. ωσyz spectra for 20-A(ring)-thick Co film showed a resonance-type structure at around 5 eV. It is considered that the structure is caused by the lower energy shift of the 1→6 interband transitions due to the narrowing of the 3d bands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361609
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Low frequency (1/f) noise in YBa2Cu3O7−δ grain boundary junction dc superconducting quantum interference devices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1895-1898 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied low frequency (1/f) noise of YBa2Cu3O7−δ dc superconducting quantum interference devices (SQUIDs) on SrTiO3 bicrystal substrates. 1/f flux noise, either measured at different temperatures for optimized bias current or measured at 77 K for different bias currents, is almost constant. These facts imply that 1/f noise mainly comes from fluctuations of the critical current of the Josephson junction that form the SQUID. Also, we explain the critical current fluctuations in the junction by an equilibrium temperature fluctuation model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357714
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Microwave-induced current steps in intrinsic Josephson junctions patterned on Bi2Sr2CaCu2O8 single crystal (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3693-3695 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With a 10 μm×10 μm mesa patterned on Bi2Sr2CaCu2O8 single crystals, we measure the current–voltage (I–V) curves of a stack of intrinsic Josephson junctions. Current steps are observed at an equal voltage spacing of 4 mV when the sample is subjected to microwave radiation at around 7 GHz. With increase of the microwave power, more steps occur while the spacing between neighboring steps does not seem to change. The magnitude of each step depends on the microwave power in an oscillating way. Tuning the microwave frequency causes such steps to occur over separate frequency ranges, and each range is quite narrow. A temperature rise from 4.2 to 14.3 K completely quenches the step structures. Possible explanations for the step structures, based on resonances excited by microwave or geometric resonances in the junction cavity, are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123223
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Correlation between electron mobility and silicon-hydrogen bonding configurations in plasma-hydrogenated polycrystalline silicon thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2436-2438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes the relationship between electron mobility and Si-hydrogen bonding configurations in poly-Si thin films after plasma-hydrogenation treatment. A 50-nm-thick amorphous-Si film was crystallized by excimer laser irradiation followed by plasma hydrogenation. Measurements of the Hall effect and Raman scattering demonstrated that mobility increased under the Si-H dominant state and decreased under the Si-H2 dominant state, which were respectively caused by adjusted and excessive hydrogenation times. Mobility degradation was recovered by dissociation of excess H atoms by annealing. The origin of the correlation is discussed in terms of imperfections such as grain boundaries and in-grain defects.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121376
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    High-purity GaSb epitaxial layers grown from Sb-rich solutions (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 239-240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped GaSb crystals with mirror-like surfaces were obtained by liquid phase epitaxy from Sb-rich solutions. The background carrier concentration strongly depended on the growth temperature. By growing crystals below 600 °C, we can obtain a GaSb crystal with a background carrier concentration under 1016 cm−3. Photoluminescence studies showed that native defects related to Sb vacancies were significantly reduced in the GaSb crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102842
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...