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  • American Institute of Physics (AIP)  (18)
  • Institute of Physics  (2)
  • 1
    Electronic Resource
    Electronic Resource
    An x-ray topographic study of β-SiC films on Si substrates (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1883-1890 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects in β-SiC films grown on Si substrates by chemical-vapor deposition have been investigated using x-ray double-crystal topography. Varying levels of dislocations are often observed in the form of channels, originating at the SiC/Si interface, which can be detected topographically regardless of the visible roughness in the film surface. It is found that rough surfaces are crystallographically more "flat,'' on a macroscopic scale, compared to smooth surfaces which are often curved. Films in the latter group also contain fewer defects than the former, and are characterized mostly by misfit striations along [110] directions. A model for defect propagation is proposed connecting the observed topographic detail to the lattice mismatch, differences in thermal expansion, and the relative thickness of film and substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338033
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence of InAs1−xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8192-8194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photoluminescence has been used to study the band-gap energy of InAs1−xSbx digital superlattices and band alignment of InAs1−xSbx/AlSb quantum wells at 5 K. It is found that the InAs1−xSbx digital alloys have a smaller effective band gap than InAs1−xSbx random alloys. In addition, the valence band offset between type-II InAs/AlSb is determined to be 130 meV. This number reduces as the Sb mole fraction in InAs1−xSbx is increased, and the alignment between InAs1−xSbx/AlSb becomes type I when x〉0.15. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373517
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  • 3
    Electronic Resource
    Electronic Resource
    Comment on "Analysis of high-resolution x-ray diffraction in semiconductor strained layers" [J. Appl. Phys. 86, 782 (1999)] (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8212-8214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The multilinear regression analysis proposed for optimizing the measurements and minimization of errors in the x-ray peak separation method is examined. It is shown that the interpretation of the residuals as the errors of the physical variables leads to paradoxical conclusions, and prevents the definition of a unique numerical value for the probable error. It is also shown that if the method is to yield a permissible set of lattice parameters, the residuals of the best fit must fall within the range of experimental uncertainties estimated in advance. Thus, the residuals are only useful as a measure of the internal consistency among the data, but they cannot be used to quantify or minimize the errors within that set. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373524
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray double-crystal analysis of misorientation and strain in GaAs/Si and related heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1154-1160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed x-ray double-crystal-diffractometry investigation of GaAs on Si tilted towards [110] direction has been carried out to understand the structure, misorientation, and residual stress present in this system. The structure of the GaAs epilayer is approximately triclinic, with the in-plane lattice parameters a and b being in most cases slightly larger than, and that along the growth direction c less than, the bulk GaAs. For vicinal angles between 0° and 5°, a tilt angle of up to 0.12° between GaAs and Si lattice is observed, inclined mostly in the same direction as the vicinal angle, but also having a small component in a perpendicular direction. A residual tensile stress of the order of 109 dyn/cm2 exists in the epilayer, which can be accounted for by the difference in the thermal expansion coefficients of GaAs and Si. The strain due to the lattice parameter mismatch between the two materials is found to be negligibly small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353282
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  • 5
    Electronic Resource
    Electronic Resource
    High-energy Si implantation into InP:Fe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1750-1757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy Si implantations were performed into InP:Fe at energies ranging from 0.5 to 10 MeV for a dose of 3×1014 cm−2, and at 3 MeV for the dose ranging from 1×1014 to 2×1015 cm−2. The first four statistical moments of the Si-depth distribution, namely range, longitudinal straggle, skewness, and kurtosis, were calculated from the secondary-ion mass spectrometry (SIMS) data of the as-implanted samples. These values were compared with the corresponding trim-89 calculated values. SIMS depth profiles were closely fitted by Pearson IV distributions. Multiple implantations in the energy range from 50 keV to 10 MeV were performed to obtain thick n-type layers. Variable temperature/time halogen lamp rapid thermal annealing (RTA) cycles and 735 °C/10-min furnace annealing were used to activate the Si implants. No redistribution of Si was observed for the annealing cycles used in this study. Activations close to 100% were obtained for 3×1014-cm−2 Si implants in the energy range from 2 to 10 MeV for 875 °C/10-s RTA. Transport equation calculations were used to interpret low activation results for high dose Si implants. Polaron electrochemical C–V profiling was used to obtain carrier concentration depth profiles. The lattice quality of the as-implanted and annealed material was evaluated by performing x-ray rocking curve measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349515
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal stress-induced, high-strain fragmentation of buried SiGe layers grown on Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2678-2680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried Si1−xGex layers grown on Si at elevated temperatures of 700 to 800 °C generally exhibit x-ray rocking curves which are significantly broader than those predicted for perfect crystals, suggesting that the layers are strain-relieved. However, calculations using these rocking curves show the materials to be either nearly- or fully-strained. The source of x-ray broadening accompanied by high strain is found to be an abrupt, thermally-induced fragmentation of the layer into small, slightly misoriented regions during the cool-down, such that the as-grown strain remains unchanged. The fragments are typically rectangles a few micrometers wide, with well-defined boundaries along [110]-type directions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114290
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  • 7
    Electronic Resource
    Electronic Resource
    X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 825-827 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The level of strain and the fraction of Ge in SiGe layers grown on Si can be found rapidly and unambiguously using double-crystal x-ray diffraction and a simple application of the linear elasticity theory combined with Vegard's law. The method gives excellent results for 0.4-μm-thick buffer layers of SiGe/Si containing 5%–50% germanium. It is shown that lattice relaxation rises abruptly at x(Ge)≥15%, and that some strain remains for x(Ge) as high as 50%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104501
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  • 8
    Electronic Resource
    Electronic Resource
    Double crystal x-ray analysis of strain distribution in rapid thermal annealed, S-implanted GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3964-3969 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double crystal x-ray analysis has been carried out on GaAs wafers implanted with 1.15 MeV sulfur ions at a dose of 5×1014/cm2, followed by rapid thermal anneal for 10 s at temperatures between 300 and 1100 °C. A systematic reduction of strain with increased annealing temperature has been observed, as measured from the separation between the peak of the unimplanted substrate and the major peak of the strained region. Calculations of strain distribution based on existing numerical models are correlated with implantation parameters using Pearson's type-VI distribution functions. Strain reduction after a silicon nitride encapsulation process is found to be equivalent to that after a 300 °C, 10 s rapid thermal anneal (RTA). It is also found that strain relaxation by RTA is strongly dependent on both sample size and the annealing geometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347166
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  • 9
    Electronic Resource
    Electronic Resource
    Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 608-610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of significant enhancement in the electrical and crystalline properties of GaN layers grown on vicinally cut, a-plane sapphire substrates. Room-temperature Hall mobility and x-ray rocking curve data show a nearly twofold improvement, independent of the processing conditions, for layers grown on substrates having vicinal angles of 1.5° compared to on-axis substrates. Transmission electron microscopy shows reduced edge dislocation density and better alignment of the grains in layers grown on vicinally cut substrates. Preliminary photoluminescence measurements also indicate pronounced differences in the yellow band spectra between the on-axis and off-axis cut substrates. These findings contrast the relatively modest improvements observed in layers grown on c-plane substrates with vicinal angles as high as 10°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121871
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  • 10
    Electronic Resource
    Electronic Resource
    B implants in Si1−xGex/Si (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 391-393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron ion implantations were performed into 100 nm thick, undoped, strained Si1−xGex alloy films with x values of 0, 0.1, and 0.2 grown on (100) Si. B implants of 1×1013, 1×1014, and 1×1015 cm−2 were done at 20 keV. Implant activation was accomplished by using either 20 s rapid thermal anneals or 10 min furnace anneals, both at temperatures up to 800 °C. The annealed material was characterized by Hall, secondary ion mass spectrometry, and x-ray rocking curve measurements. We observed an increasing B activation with increasing Ge concentration in the alloy. For x=0.2 we obtained 100% B activation for 1×1013 and 1×1014 cm−2 implants annealed at 700 and 800 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116695
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