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  • Wiley  (94)
  • Copernicus  (70)
  • American Institute of Physics (AIP)  (24)
  • American Association for the Advancement of Science (AAAS)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4211-4216 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytical and numerical calculations of threshold behavior and electro-optical characteristics in twisted chiral nematic layers are presented, when weak anchoring in the tilt and twist angle of the director is assumed. An analytical expression for the effective twist angle and the Fréedericksz threshold voltage is derived. In cells with bistabilities, we investigate the influence of the anchoring parameters and device parameters on the width of the hysteresis. Using the 4×4-matrix formalism of Berreman [J. Opt. Soc. Am. 62, 502 (1972)], we demonstrate the influence of the weak anchoring on the transmission-versus-voltage characteristic.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4082-4084 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical contact resistivities of both Al and Cu single layer contacts as well as Cu/Au and Al/Au bilayer metal contacts to YBa2Cu3O7−x (YBCO) thin film have been studied. It was found that aluminum and copper make poor electrical contacts to YBCO due to interface reactions. These contacts have large contact resistivity (10−1–1 Ω cm2), orders of magnitude higher than that of a gold/YBCO contact (10−6 Ω cm2). When an ultrathin Au interlayer (10–30 A(ring)) was inserted between an Al or Cu overlayer and a YBCO film, interface reaction was greatly reduced. The contact resistivities of Al/Au and Cu/Au bilayer-metal contacts dropped by five orders of magnitude when Au interlayer thickness was increased from 0 to 10 A(ring). With the gold interlayer thickness of 15 A(ring), the Al/Au and Cu/Au bilayer-metal contacts reached a minimum contact resistivity, approaching that of a thick single-layer Au metal contact.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8417-8419 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloy system Six(SnyC1−y)1−x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 1015–1016 cm−2, followed by rapid thermal annealing. Rutherford backscattering and channeling, Auger sputter profiling, and secondary-ion-mass spectrometry were employed to study the crystallinity, chemical composition, and depth profiles. A near-perfect crystallinity for 0.5 at. % of tin and carbon was achieved. For high-dose implanted samples, tin segregation was observed. This work demonstrates promising features of group-IV semiconductor synthesis by ion implantation.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 7951-7961 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a study of deep-ultraviolet-light-enhanced (4.1〈hν〈5.1 eV) oxygen reactions on GaAs from submonolayer to several monolayers coverage. The reaction is nonthermal and does not involve gas-phase excitation or dissociation of O2. Our experiments show a distinct wavelength and coverage dependence for the photoenhancement. X-ray photoelectron spectroscopy has been used to examine the chemical nature of the oxygen adsorbate and the GaAs oxides in order to find intermediate reaction species and evidence of the reaction pathways. The roles of photons and photogenerated carriers in the reaction enhancement mechanism are discussed. The results indicate that a mechanism based on photoemission of electrons into the growing oxide film is most in accord with the experimental observations. Such electron emission would increase the field-driven transport of oxygen to the GaAs interface.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 10 (1998), S. 3099-3110 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation two-dimensional dipolar vortices by the interaction between two shielded monopolar vortices with opposite vorticity, as shown in a numerical study by Couder and Basdevant,〈citeref RID="R1" STYLE="SUPERIOR"〉1 is investigated in detail, both experimentally, in a nonrotating stratified fluid and numerically by direct solutions of the two-dimensional Navier–Stokes equations. A comparative study between the laboratory experiments and numerical simulations is performed. The vorticity distribution measured in the early stage of the evolution in the laboratory is used as initial data for the simulations, and an additional damping term in the Navier–Stokes equations, that accounts for the vertical diffusion in the laboratory experiments, is used. The results show that, depending on the initial separation between the vortices, the shields of the monopoles are peeled off and indeed a compact dipole with a linear (ω,ψ)-relationship is formed, or when the monopoles are further apart the shields of the monopoles are perturbed and two tripoles are formed. The characteristics of the emerged dipole are analyzed and a dye visualization of the dipole formation is performed. A second, more general numerical study yields a relationship between the formation time of the dipole and the initial separation distance between the monopoles and it shows that the deshielding process can be explained by the domination of strain over vorticity. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2696-2703 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: With the increasing popularity of the scanning tunneling microscope (STM) in surface science, many ideas for additional and new technical features have been proposed. The work herein contributes to this evolution with a special STM design. The STM described is part of an experimental apparatus for thin film growth investigations in ultrahigh vacuum. Besides the STM, the apparatus includes facilities for thermal desorption spectroscopy and Auger electron spectroscopy and a Kelvin probe for measuring dynamic work function changes. The Kelvin probe is optimized for gas adsorption experiments as well as for in situ film growth investigations during metal deposition. These added features combined with the STM and easy sample transfer yield a new powerful tool for in situ controlled preparation and extensive characterization of thin films. In the present work we describe the novel features of this STM and we demonstrate the efficiency of the whole system by giving a few representative results. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3866-3871 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In the present work, we describe a new Kelvin probe for dynamical work function change (ΔΦ) measurements in ultrahigh vacuum. The construction of the Kelvin probe is especially optimized to meet the experimental conditions for gas-adsorption experiments as well as for in situfilm growth investigations during metal deposition. This is realized by a new setup which enables a change of the geometrical orientation of the vibrating reference electrode with respect to the sample surface. The Kelvin probe combined with thermal desorption spectroscopy, Auger electron spectroscopy, and scanning tunneling microscopy facilities, forms a powerful tool for film growth analysis. The performance of the instrumentation is demonstrated with some representative test experiments for copper deposition on Pt(111). © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1143-1145 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface chemistry of GaAs-oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma has been investigated with x-ray photoelectron spectroscopy. It is found that As oxide is efficiently removed at room temperature, and heating expedites the removal of Ga oxide. Band bending changes during ECR hydrogen-plasma oxide reduction are also discussed.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 268-270 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fermi level movements at Pt/GaAs and Ti/GaAs interfaces have been investigated using a direct measurement of Schottky barrier heights in a bimetal Schottky structure. Using thin interfacial layers, the Schottky barrier was smoothly varied from the characteristic value of the thick metal to that of the interfacial metal. The variation of barrier height versus the inner metal thickness was found to exhibit an exponential behavior extending over a few monolayers coverage. This experiment indicates a new approach to the fundamental study of metal-semiconductor interfaces and could be useful in device applications.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2228-2230 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.
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