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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1913-1915 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The far infrared (FIR) photoconductivity of GaAs/AlGaAs multiquantum wells (MQWs) doped with silicon has been investigated. The spectral response is consistent with extrinsic photoconductivity from shallow donors with an effective Rydberg of approximately 10.5 meV. The time-resolved photoconductivity due to stimulation with a cavity-dump FIR laser is measured. Subnanosecond rise and decay times are implied for the MQWs investigated; these times are shorter than for the corresponding bulk cases. Possible effects of geometric confinement on recombination rates are discussed. For a 150-period MQW, the responsivity at 118 μm is approximately 105 V W−1 .
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4784-4789 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fast C-V measurement techniques are utilized to simultaneously probe both upper and lower interfaces of silicon-on-insulator/separation by implantation of oxygen buried oxide capacitors following exposure to pulsed ionizing irradiation. In addition to the relatively stable radiation-induced positive charge, reverse annealing is observed from both Si-SiO2 interfaces over the 200 μs to 300 s post exposure interval; this behavior is consistent with electron detrapping within the oxide. The dependence of electron detrapping on dc annealing bias is attributed to field-enhanced emission effects.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2562-2571 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results for a high-brightness electron-beam source are compared to results of numerical and analytic calculations. The 4-MV, 5-kA beam is generated from a velvet cathode and focused by a solenoidal magnet. Data for the diode impedance and the beam focusing length and spot size agree well with numerical simulations. The minimum spot size is consistent with a normalized Lapostolle emittance of 0.12 cm rad, yielding a brightness of 3.5×108 A/m2 rad2 . Transverse beam oscillations are observed in streak photographs and are thought to be caused by electromagnetic dipole modes in the diode cavity. The oscillation amplitude is significantly reduced by making the current rise more slowly.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1322-1326 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The far-infrared optical response of a structure consisting of a perfectly conducting grating gate on a modulation-doped GaAs/AlGaAs heterojunction has been calculated using the scattering matrix technique. The grating gate allows coupling between the incident radiation and the plasmon resonance of the two-dimensional electron gas (2DEG) in such a system, but also modifies the dispersion relation for the plasmon because of screening by the image charge distribution induced on the grating gate. Using the scattering matrix technique allows this screening effect to be modeled more accurately than has hitherto been possible, and our calculations show that the induced charge is concentrated at the edges of the grating fingers. The sinusoidal profile of the oscillating charge density in the 2DEG distorts so that the maximum amplitude of the oscillation is close to these edges, and the plasmon frequency is determined by the amount of distortion of the plasmon charge density profile and the additional screening gained through the distortion. Plasmon frequencies are calculated for a wide range of lamellar grating mark/space ratios, and are found to lie between the extremes predicted for plasmons in 2DEGs close to a vacuum interface and close to a continuous metal gate.
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report far infrared (FIR) studies of plasmons in spatially modulated two-dimensional electron gases (2DEGs) in AlGaAs/GaAs heterostructures using biased overlaid metal gratings, including interdigitated gratings, both as optical couplers and as spatially modulating gates. Comparison of the experimental results with the predictions of scattering matrix calculations of the FIR response of a modulated 2DEG in the presence of a perfectly conducting lamellar grating allow us to deduce the spatial variation of the number density distribution in the 2DEG as a function of grating bias. For the interdigitated grating gates, the 2DEG can be modulated at a period of twice that of the grating fingers by differentially biasing alternate fingers; 2D plasmon resonances have been observed at half-integral values of the grating wave vector G, corresponding to the electrically induced periodicity of the 2DEG modulation itself acting as an optical coupler in addition to the metal grating. The observed G/2 plasmon frequencies decrease with increasing amplitude of the 2DEG number density modulation, in quantitative agreement with those obtained from scattering matrix calculations of the optical response of a modulated 2DEG under a perfectly conducting lamellar grating; calculations of the oscillating charge density profiles show that this occurs because, as the modulation amplitude increases, the oscillation becomes localized in regions of low 2DEG number density which are also under one of the sets of grating fingers, and is therefore better screened.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 542-544 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin alloy films of Pd and Ni (8%〈Ni〈20% in at. %) formed by dual-electron-beam evaporation techniques have been found to give durable and quickly reversible detectors of high H2 concentrations (pH2 0.1%–100%, 0.7–700 Torr) near 1 atm and 300 K, including accurate determinations of pH2 around the lower explosive limit of 4% in air. The addition of Ni suppresses the α to β phase transition found in pure Pd under these conditions. The measurement of resistivity changes in the thin films along with flatband shifts of metal-oxide-semiconductor capacitors on the same Si wafer gives accurate values of pH2 over more than six decades.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 175-181 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-on-insulator structures obtained by single-step implantation of oxygen followed by high temperature annealing were studied by K-band electron spin resonance (ESR) at 4.3–31 K. The spectrum has a strong line at g=2.0059±0.0001 with a spin density of 7.1×1013 cm−2. Various features indicate that it is very similar to that characteristic of dangling Si-bonds (DBs) in a-Si but different from the ESR signal of the Pb center associated with single-crystal-Si/SiO2 interfaces. Irradiation by γ rays to a dose of 1 Mrad(Si) resulted in a 2.5-fold increase in DB density and in the appearance of a new, anisotropic signal of spin density 1.1×1012 cm−2. The latter signal is similar to that originating from a shallow donor in Si, of axial symmetry and preferentially aligned along [001]. It is tentatively assigned to an oxygen-related double donor in Si regions close to the Si/SiO2 interface and/or in the buried oxide. These donors are not generated by irradiation; rather, their ionization state is altered through band bending tuning resulting from irradiation-induced charges in the oxide.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2196-2206 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interactions of deuterium gas (D2) with implantation-formed Si-SiO2-Si structures were investigated in the temperature range 500–1000 °C using nuclear-reaction analysis. At 600 °C and above there is substantial permeation of D through the overlying Si layer, and this D becomes stably bound within the buried SiO2. The reactions within the implantation-formed oxide differ significantly from those in thermal oxides and are characterized by two distinct time regimes. In the first regime there is a rapid transient reaction which, at least at 600 °C, is controlled by permeation through the Si overlayer. After the initial transient there is a much slower reaction within the oxide, prominent at 700 °C and higher, which is controlled by a reaction barrier. The results indicate that the implantation-formed oxides contain more numerous hydrogen-reactive sites than do silica or thermal oxides on Si, and further that the number of these sites is substantially increased by Si epitaxial deposition. Deuterium permeation through the Si overlayer was used to determine the permeability of hydrogen in Si at 600 °C for the first time.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6500-6505 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is a need for semiconductor junctions with very low leakage for energy conversion from low level radioactive or radio-luminescent sources, and low noise blue-green photodiodes. We report the properties of two types of GaP junctions; a Schottky barrier of Pd on liquid phase epitaxy grown n-type GaP and a p+ over n junction grown by metal-organic chemical vapor deposition. Both types of junctions show very low leakage currents and good efficiency for power conversion from low level beta particles, x rays, and blue-green light.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 6124-6135 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The viscoelastic properties of a concentrated monodisperse latex of polyvinylidene fluoride coated by a monolayer of the surfactant C12E6 has been examined as a function of volume fraction. This system shows solidlike behavior in the linear viscoelastic region. A model is developed to describe number density fluctuations in the sample in terms of the colloid pair interaction energy. This is used to determine the relaxation spectrum and is then compared with experimental data. Excellent agreement is found between the model and the measured stress relaxation response. This model has been compared to published data on polystyrene latex and has also shown excellent agreement. A tracer diffusion coefficient is calculated to illustrate that the dynamic processes controlling relaxation are slow.
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