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  • 1
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    Erratum: Linear Optical Quantum Metrology with Single Photons: Exploiting Spontaneously Generated Entanglement to Beat the Shot-Noise Limit [Phys. Rev. Lett. 114 , 170802 (2015)] (2017)
    American Physical Society
    Details
    Publication Date: 2017-02-17
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society
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  • 2
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    Linear Optical Quantum Metrology with Single Photons: Exploiting Spontaneously Generated Entanglement to Beat the Shot-Noise Limit (2015)
    American Physical Society
    Details
    Publication Date: 2015-04-30
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society
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  • 3
    Electronic Resource
    Electronic Resource
    Modeling self-contact forces in the elastic theory of DNA supercoiling (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 3967-3980 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A DNA polymer with thousands of base pairs is modeled as an elastic rod with the capability of treating each base pair independently. Elastic theory is used to develop a model of the double helix which incorporates intrinsic curvature as well as inhomogeneities in the bending, twisting, and stretching along the length of the polymer. Inhomogeneities in the elastic constants can also be dealt with; thus, sequence-dependent structure and deformability can be taken into account. Additionally, external forces have been included in the formalism, and since these forces can contain a repulsive force, DNA self-contact can be explicitly treated. Here the repulsive term takes the form of a modified Debye–Hückel force where screening can be varied to account for the effect of added salt. The supercoiling of a naturally straight, isotropic rod in 0.1M NaCl is investigated and compared with earlier treatments of supercoiled DNA modeled by a line of point charges subject to electrostatic interactions and an elastic potential. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474752
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p–i–n diodes (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5815-5820 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1−xAs multiquantum wells where x=0.155–0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode devices, and the subsequent low forward bias (〈1.5 V) dark current densities of the devices. A comparison is made of the correlation between the reverse bias current density and dark line density and it is found that, in this range of strain, the forward bias current density varies more. Two growth methods, molecular beam epitaxy and metal organic vapor phase epitaxy, have been used to produce the wafers and no difference between the growth methods has been found in dark line or current density variations with strain. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363574
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  • 5
    Electronic Resource
    Electronic Resource
    Thin lens simulations of inertial confinement fusion focusing systems for light ions (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2879-2883 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Systems for focusing a light ion beam onto an inertial confinement fusion (ICF) target are studied using a thin lens model to compute ion trajectories. Three focusing systems are analyzed. The systems are (1) an uncorrected single focusing lens; (2) a focusing lens with chromatic correction due to the self magnetic field of the beam; and (3) the combination of a focusing lens, a defocusing lens for divergence correction, and chromatic correction from the beam's self field. Systems (2) and (3) both produce energy efficiencies of greater than 50% for transporting an ion beam with 6 mrad divergence over 4 m and focusing it onto a 1 cm radius target. The predictions of the thin lens model are compared to predictions made by codes using numerical integration of particle trajectories. The implications for ICF applications are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358701
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of time-of-flight bunching on efficiency of light-ion-beam inertial-confinement-fusion transport schemes (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4402-4414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Laboratory Microfusion Facility (LMF) has been proposed for the study of high-gain, high-yield inertial-confinement-fusion targets. The light-ion LMF approach uses a multimodular system with applied-B extraction diodes as ion sources. A number of ion-beam transport and focusing schemes are being considered to deliver the beams from the diodes to the target. These include ballistic transport with solenoidal lens focusing, z-discharge channel transport, and wire-guided transport. The energy transport efficiency ηt has been defined and calculated as a function of various system parameters so that point designs can be developed for each scheme. The analysis takes into account target requirements and realistic constraints on diode operation, beam transport, and packing. The effect on ηt of voltage ramping for time-of-flight beam bunching during transport is considered here. Although only 5 mrad microdivergence calculations are presented here, results for bunching factors of ≤3 show that transport efficiencies of (approximately-greater-than)50% can be obtained for all three systems within a range of system parameters which seem achievable (i.e., for diode microdivergence within 5–10 mrad, for diode radius within 10–15 cm, and for diode-ion-current density within 2–10 kA/cm2). In particular, the point design for the baseline LMF system using ballistic transport with solenoidal lens focusing and a bunching factor of 2 was calculated to have ηt=84%. Other factors affecting the overall system efficiency, but not included in the analysis, are also identified and estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355984
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  • 7
    Electronic Resource
    Electronic Resource
    Low-band-gap Ga0.5In0.5P grown on (511)B GaAs substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5110-5113 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band gap and microstructure of Ga0.5In0.5P have been shown to vary with deposition conditions. However, growth on (511)B GaAs substrates has been reported to give Ga0.5In0.5P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga0.5In0.5P can be grown with low band gap and significant ordering on even the (511)B substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575 °C), low growth rate (0.55 μm/h), and high phosphine pressure (5 Torr).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355756
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  • 8
    Electronic Resource
    Electronic Resource
    Tensile strength of synthetic chemical-vapor-deposited diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5177-5179 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pressure burst tests gave measured tensile strengths between 230 and 410 MPa for a total of six chemical-vapor-deposited (CVD) diamond disks in both transparent "white'' and opaque "black'' forms obtained from three different sources. The disks were nominally 0.635 cm in diameter and 254 μm thick. These strengths are explained by a theoretical model using a Young's modulus of 1.05×106 MPa and a fracture surface energy of 5.3 J/m2, appropriate for natural diamond, and with critical crack lengths between 33 and 105 μm. The latter lengths can fit, either on or inside, the tapered columnar crystal grains that grow vertically in synthetic CVD diamond films. The model is consistent with the observed inverse dependence of measured tensile strength on film thickness and with tensile strengths between 180 and 5190 MPa reported by other workers for synthetic CVD diamond. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359752
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  • 9
    Electronic Resource
    Electronic Resource
    Determination of free carrier concentration in n-GaInP alloy by Raman scattering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2515-2519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of Raman scattering from coupled phonon-plasmon modes in Se-doped n-Ga0.52In048P alloy. Due to the small energy separation between the Γ- and the L-point conduction-band minima for this alloy composition, a significant fraction of the free carriers at room temperature are present in the L-conduction-band valley, giving rise to a multicomponent plasma. The carrier concentrations extracted from the Raman spectra for the different epilayers are in good agreement with the free electron concentrations determined by capacitance-voltage measurements. We employ the light scattering technique to extract the carrier concentration in the n-type emitter layer of a GaInP-based solar cell. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360715
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  • 10
    Electronic Resource
    Electronic Resource
    Equilibria and kinetics of polydisperse mixture adsorption (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 3868-3874 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We study the equilibrium and kinetic properties of a model for polydisperse mixture adsorption. The system consists of a bulk phase of hard disks with a given size distribution and overall concentration that adsorb and desorb on a continuous planar surface. The disks adsorb at a rate proportional to their bulk concentration and desorb at a rate that may depend on the particle size. The model is characterized by α, the dimensionless binding energy of a solute per unit area, and K which is proportional to the total bulk concentration. The properties of the model are determined with scaled particle theory (SPT) and with numerical simulation. If the desorption rate is independent of particle size, an equilibrium is rapidly established between the bulk and adsorbed phases. The resulting adsorption isotherms predicted by SPT agree well with the numerical simulations. If the desorption rate depends exponentially on the binding energy of the adsorbed particle, the approach to equilibrium is dramatically slowed. At high bulk concentrations and low values of α the adsorbed density increases monotonically with time, while the coverage displays an overshoot. At low K and high α, it is the coverage that increases monotonically, while the density passes through a maximim. For a given bulk phase distribution, one can construct an (α,K) kinetic phase diagram delineating this behavior. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480534
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