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  • 1
    Electronic Resource
    Electronic Resource
    Formation of Ti silicides by metal-vapor vacuum arc ion source implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6257-6262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-vapor vacuum arc ion source was employed to synthesize Ti silicides by Ti implantation directly into Si or through a deposited titanium film on Si wafers. The implantation was conducted at room temperature at an extracted voltage of 40 kV. In the directly implanted Si wafers, the transition of Ti disilicides from a metastable C49-TiSi2 to an equilibrium phase C54-TiSi2 was observed when the current density was of 125 μA/cm2 at a nominal dose range of 3–5×1017/cm2, while in the Si wafers with a deposited Ti film, C54-TiSi2 was formed when the current density was of 125 μA/cm2 at a fixed nominal dose of 5×1017/cm2. The temperature rise caused by ion implantation was calculated by solving a differential thermal conduction equation and the results were employed to discuss the formation mechanism of Ti silicides. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359157
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  • 2
    Electronic Resource
    Electronic Resource
    Synthesis of β- and α-FeSi2 phases by Fe ion implantation into Si using metal vapor vacuum arc ion source (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3847-3854 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-current Fe ion implantation technique was employed to synthesize Fe-silicide layers on Si wafers, using a newly constructed metal vapor vacuum arc ion source. The Fe ions were extracted at a voltage of 40 kV with a varying ion current density from 65 to 152 μA/cm2 and a nominal ion dose varied from 3×1017 to 3×1018 Fe/cm2. At a fixed nominal dose of 4×1017 Fe/cm2, a semiconducting β-FeSi2 layer gradually grew on Si with increasing ion current density and a qualified β-FeSi2 layer with a relative sharp interface was obtained, when the ion current densities exceeded 115 μA/cm2. While implanting at a fixed ion current density of 152 μA/cm2 with varying ion dose, the β-FeSi2 phase began to form first at a nominal dose of 3×1017 Fe/cm2, and eventually transformed into a metallic α-FeSi2 phase when the nominal dose reached 3×1018 Fe/cm2. Further information of the formation of Fe disilicides was obtained by comparing the postannealing results of some of the implanted wafers with those observed immediately after implantation. The formation mechanism of the Fe disilicides is discussed in terms of the beam heating effect, which in turn resulted in a simultaneous thermal annealing during Fe ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356064
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  • 3
    Electronic Resource
    Electronic Resource
    Refractory metal silicides synthesized by metal vapor vacuum arc ion source implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3690-3696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Refractory metal silicides, namely NbSi2, TaSi2, WSi2, and MoSi2, were successfully synthesized by using a metal vapor vacuum arc (MEVVA) ion source to implant the respective metal ions with high current density into Si(111) and Si(100) wafers. The implantation was conducted at room temperature with an extracted voltage of 40 kV. When the current densities of the refractory metal ions were up to 65 μA/cm2, the equilibrium hexagonal NbSi2 and TaSi2 phases were formed at an implantation dose of 3×1017 ions/cm2, while the hexagonal WSi2 and MoSi2 phases were formed at a dose of 5×1017 ions/cm2. With increasing the current density up to 90 μA/cm2, the transition of the hexagonal WSi2 and MoSi2 phases to their most stable tetragonal structures was observed. Postannealing at 750 and 950 °C resulted in the formation of the unique tetragonal WSi2 and MoSi2 phases, respectively. The electrical property of the MEVVA-synthesized refractory metal silicides was measured for both as-implanted and postannealed wafers. In addition, the formation of the refractory metal silicides by MEVVA implantation is discussed in terms of the beam heating effect caused by high current ion implantation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359537
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6135-6138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5–6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371664
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  • 5
    Electronic Resource
    Electronic Resource
    Propagation and post-acceleration of a pseudospark-sourced electron beam (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5419-5422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Propagation and post-acceleration of a pseudospark-sourced electron beam from a three-gap pseudospark discharge chamber were studied in recent experiments. The pseudospark produced an electron beam of two phases, an initial 22 kV, 50 A hollow cathode phase beam of brightness 109−10 Am−2 rad−2 followed by a 200 V, 200 A conductive phase (CP) beam of brightness 1011−12 Am−2 rad−2. The aim of these experiments was to post accelerate the lower-voltage, higher-current CP beam using an acceleration unit driven by a 40 kV, 125 ns voltage pulse produced by a cable Blumlein. The experiments were realized by attaching an acceleration unit to the downstream side of the anode of the discharge chamber. Both the pseudospark discharge and the cable Blumlein were triggered to ensure time correlation between initiation of the pseudospark discharge and post-acceleration of the beam. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459757
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  • 6
    Electronic Resource
    Electronic Resource
    Strong and stable ultraviolet luminescence in porous silicon in situ passivated by manganese (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 854-856 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A strong and stable ultraviolet photoluminescence (PL) band (370 nm) together with a red luminescence band around 670 nm with a 730 nm shoulder were observed in Mn-passivated porous silicon (PS) prepared by the hydrothermal technique. The surface structure is examined by Fourier infrared and x-ray photoelectron spectroscopy analysis. The 670 nm band was confirmed to be the usually observed PL band in PS, and the appearance of the 370 nm band and 730 nm shoulder peak was interpreted based on surface structure characterization and spectroscopy measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306396
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  • 7
    Electronic Resource
    Electronic Resource
    Kerr rotation enhancement and correlation between perpendicular anisotropy and Kerr effect in PtCu(Al,Ag)/Co multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3957-3961 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of doping Cu, Al, and Ag in Pt spacer layers on the perpendicular anisotropy Ku and the polar Kerr rotation aitch-thetak in the wavelength range of 400–800 nm have been investigated for sputtered 0.8 nm Pt/0.3 nm Co multilayers. Ku and aitch-thetak measured below 633 nm decrease with the increase of the concentrations of Cu, Al, and Ag in the Pt spacer layers. It is found that the variation of Ku and aitch-thetak with the doping concentrations follows a quadratic equation of Ku=aaitch-theta2k+b (a, b are constants here). This suggests that both Ku and aitch-thetak originate from a common micromechanism, i.e., spin-orbit coupling. An obvious enhancement in the peak of the polar Kerr rotation appears at 770 nm for Cu and Ag dopings and at 680 nm for Al doping. Moreover, the polar Kerr rotation aitch-thetak* at this enhanced peak shows an oscillation behavior with the increasing doping concentrations in the Pt spacer layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363353
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  • 8
    Electronic Resource
    Electronic Resource
    Stable optical storage and high-order diffraction in a liquid-crystal polymer film by two-wave mixing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1913-1914 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical storage with long-term stability and up to third-order diffraction have been observed in a liquid-crystal polymer film by two-wave mixing. After turning off the pump beam, the diffraction of the probe beam remains. While the probe beam is turned off, the intensities of the diffraction beams of the pump beam does not decrease significantly. A brilliant hologram spot is observed on the film during the experiments and the trace of the spot can be maintained over 120 days without obvious change. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116292
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  • 9
    Electronic Resource
    Electronic Resource
    Electron microscopy study of C60 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3108-3109 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructural features of the powder C60 material have been studied by using scanning microscopy, electron diffraction, and high resolution electron microscopy. Scanning electron microscopy observation reveals that the grains in the samples are packed by extensively disordered crystallites as well as amorphous granules. Electron diffraction measurements have identified that the crystals of C60 have two kinds of structure, one is face-centered-cubic (fcc) with unit cell parameter a=1.41 nm, and the other has the hexagonal closest packed (hcp) structure with cell parameters a=0.958 nm and c=1.63 nm. High resolution electron microscopy as well as electron diffraction observations clearly show the random crystallites packing in the C60 grains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105779
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  • 10
    Electronic Resource
    Electronic Resource
    C54-TiSi2 formed by direct high current Ti-ion implantation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2356-2358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report, in this letter, the formation of TiSi2 by direct Ti-ion implantation into silicon wafers using a metal vapor vacuum arc ion source. Implantation was conducted by 80 KeV Ti ions to a dose of 5×1017/cm2 with various ion current densities. When the ion current density exceeded 100 μA/cm2, the equilibrium TiSi2 of the C54 structure was uniquely formed. Additional evidence of the formation of C54-TiSi2 was given by the resistivity measurements, i.e., the sheet resistivity was below 3.0 Ω/(D'Alembertian). The formation mechanism is also discussed in terms of the beam heating effect during implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109417
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