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  • 1
    Electronic Resource
    Electronic Resource
    Fractal growth at dendrite tips in an ion-irradiated thin solid film (1988)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 1117-1123 
    Details
    ISSN: 0392-6737
    Keywords: Whiskers and dendrites: growth, structure and nonelectronic properties ; PACS 61.50.Cj ; Physics of crystal growth ; Ions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Experimental observations of fractal growth at dendrite tips during crystalline-to-amorphous phase transition in an ion-irradiated Mo65Ni35 thin film are reported. It was found that the observed anisotropic fractal patterns were of a DLA type but not exactly self-similar. The possible mechanism of this exception to the ordinary parabolic tip growth of the dendrites is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02450208
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation characteristics and magnetic properties of iron carbide and iron ultrafine particles (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5857-5860 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic Fe3C and α-Fe ultrafine particles were prepared by laser-induced pyrolysis of Fe(CO)5 and C2H4. It is found that after passivation, the Fe3C particles exhibit a high saturation magnetization of 132 emu/g compared to that of the α-Fe particle, 95 emu/g. By determining the oxygen content and the present states of oxygen the particles contained, it is found that not only oxygen content of the α-Fe particles is much higher than that of the Fe3C particles, but the oxygen is in differnt states for the two ultrafine particles. The oxygen present on the Fe3C particles is primarily in absorbed form, compared to chemically combined oxygen as in the α-Fe particles. Thin amorphous carbon layers, formed on the surfaces of the Fe3C particles, inhibit oxidation of the Fe3C and therefore result in higher saturation magnetization achieved by Fe3C particles, relative to the α-Fe particles on which no carbon layer was present. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363570
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of Ti silicides by metal-vapor vacuum arc ion source implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6257-6262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-vapor vacuum arc ion source was employed to synthesize Ti silicides by Ti implantation directly into Si or through a deposited titanium film on Si wafers. The implantation was conducted at room temperature at an extracted voltage of 40 kV. In the directly implanted Si wafers, the transition of Ti disilicides from a metastable C49-TiSi2 to an equilibrium phase C54-TiSi2 was observed when the current density was of 125 μA/cm2 at a nominal dose range of 3–5×1017/cm2, while in the Si wafers with a deposited Ti film, C54-TiSi2 was formed when the current density was of 125 μA/cm2 at a fixed nominal dose of 5×1017/cm2. The temperature rise caused by ion implantation was calculated by solving a differential thermal conduction equation and the results were employed to discuss the formation mechanism of Ti silicides. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359157
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  • 4
    Electronic Resource
    Electronic Resource
    Phase evolution upon ion mixing and solid-state reaction and thermodynamic interpretation in the Ni-Nb system (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1702-1710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphization of Ni-Nb multilayered alloy films by xenon ion irradiation at room temperature and by high-temperature solid-state reaction was studied. The composition range favoring amorphization was carefully determined to be 20–85 at. % Ni by energy-dispersive spectroscopy attached to the transmission electron microscope. A new metastable crystalline phase (MX) of hexagonal structure was formed in Ni75Nb25 and Ni70Nb30 multilayered films. Interestingly, in the Ni75Nb25 multilayered films, with increasing mixing dose an amorphous phase was first formed and then the MX-phase was observed, while in the Ni70Nb30 multilayered films the MX phase was formed at relatively low doses and turned amorphous upon further mixing or 400 °C annealing for 2 h. Besides, annealing of the as-deposited Ni70Nb30 multilayered films at 300 °C for half an hour also resulted in the formation of the MX phase. The thermal stability of the ion-mixed amorphous alloys was also studied by subsequent annealing. To give semiquantitative interpretation to all the above observations, the Gibbs free-energy diagram of the system, in which especially the free-energy curve of the MX phase is added, was constructed on the basis of the model of Nissen et al. [CALPHAD 7, 51 (1981)] and the method proposed by Alonso and Simozar [Solid State Commun. 46, 765 (1983)]. The explanation based on this diagram is in good agreement with our experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353205
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  • 5
    Electronic Resource
    Electronic Resource
    Synthesis and characterization of iron carbonitride ultrafine particles (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7911-7915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron carbonitride (ICN) ultrafine particles (20–80 nm in size) have been synthesized by laser-induced pyrolysis of Fe(CO)5–NH3–C2H4 mixture. The surface morphology, structural characteristics, oxidation behavior, and the magnetic properties of the ICN particles were reported. The role the thin carbon layer formed on the particle surface played in the oxidation behavior and in the enhancement of the magnetic properties has been studied. A carbon layer (1–2 nm) seems to protect the particles effectively from reaction of the iron carbonitride with oxygen, and the ICN particles thereby exhibit a high saturation magnetization of 142 emu/g. Additionally, the unilateral lattice expansion of the ICN compound was interpreted in terms of the structural and chemical bonding features of the ICN compound. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362403
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  • 6
    Electronic Resource
    Electronic Resource
    Synthesis of β- and α-FeSi2 phases by Fe ion implantation into Si using metal vapor vacuum arc ion source (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3847-3854 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-current Fe ion implantation technique was employed to synthesize Fe-silicide layers on Si wafers, using a newly constructed metal vapor vacuum arc ion source. The Fe ions were extracted at a voltage of 40 kV with a varying ion current density from 65 to 152 μA/cm2 and a nominal ion dose varied from 3×1017 to 3×1018 Fe/cm2. At a fixed nominal dose of 4×1017 Fe/cm2, a semiconducting β-FeSi2 layer gradually grew on Si with increasing ion current density and a qualified β-FeSi2 layer with a relative sharp interface was obtained, when the ion current densities exceeded 115 μA/cm2. While implanting at a fixed ion current density of 152 μA/cm2 with varying ion dose, the β-FeSi2 phase began to form first at a nominal dose of 3×1017 Fe/cm2, and eventually transformed into a metallic α-FeSi2 phase when the nominal dose reached 3×1018 Fe/cm2. Further information of the formation of Fe disilicides was obtained by comparing the postannealing results of some of the implanted wafers with those observed immediately after implantation. The formation mechanism of the Fe disilicides is discussed in terms of the beam heating effect, which in turn resulted in a simultaneous thermal annealing during Fe ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356064
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  • 7
    Electronic Resource
    Electronic Resource
    Surface hardening of Al by high current Fe-ion implantation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2209-2214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface modification of Al was studied by high current Fe-ion implantation using a metal vapor vacuum arc ion source. In the implantation process, two parameters were adjusted, that is, current density and ion dose, corresponding to varying the temperature and time for growing surface Fe-aluminide compound. The major hardening phase was identified to be Al13Fe4 and its depth profile was found to depend on the current density and dose. At a fixed dose of 3×1017 Fe/cm2, implanting with a low current density from 25 to 51 μA/cm2, the Al13Fe4 compound penetrated into a depth between 2500 and 4000 Å. Whereas implanting with a high current density up to 101 μA/cm2, the Al13Fe4 compound not only be situated in a 1000 Å surface layer, but also extended into a deep region when the dose was increased to 1×1018 Fe/cm2. Another dual implantation was conducted with two different current densities and it resulted in a modified region of 4500 Å thick with a high concentrated Al13Fe4 compound in a 1000 Å surface layer. Accordingly, the microhardness of the implantation treated Al films was considerably increased. The formation of the hardening phase of Al13Fe4 compound was responsible for the improvement of the surface mechanical property and was discussed in terms of temperature rise, irradiation time, and radiation-enhanced diffusion in the process of implantation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366027
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  • 8
    Electronic Resource
    Electronic Resource
    Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5144-5147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The SiO2 layers thermally grown on Si wafers were implanted by 130 keV Si ions at liquid nitrogen temperature to a dose of 1×1017 ions/cm2. From the as-implanted samples, a visible photoluminescence band centered around 2.0 eV was observed. After postannealing at 1100 °C for 90 min another visible band in the range of 1.7 eV was detected. Interestingly, with increasing thermal annealing time, a blue shift in peak energy and an intensity variation of the 1.7 eV band were observed. A possible interpretation for the observations was discussed in terms of a so-called three-region model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366317
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  • 9
    Electronic Resource
    Electronic Resource
    Refractory metal silicides synthesized by metal vapor vacuum arc ion source implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3690-3696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Refractory metal silicides, namely NbSi2, TaSi2, WSi2, and MoSi2, were successfully synthesized by using a metal vapor vacuum arc (MEVVA) ion source to implant the respective metal ions with high current density into Si(111) and Si(100) wafers. The implantation was conducted at room temperature with an extracted voltage of 40 kV. When the current densities of the refractory metal ions were up to 65 μA/cm2, the equilibrium hexagonal NbSi2 and TaSi2 phases were formed at an implantation dose of 3×1017 ions/cm2, while the hexagonal WSi2 and MoSi2 phases were formed at a dose of 5×1017 ions/cm2. With increasing the current density up to 90 μA/cm2, the transition of the hexagonal WSi2 and MoSi2 phases to their most stable tetragonal structures was observed. Postannealing at 750 and 950 °C resulted in the formation of the unique tetragonal WSi2 and MoSi2 phases, respectively. The electrical property of the MEVVA-synthesized refractory metal silicides was measured for both as-implanted and postannealed wafers. In addition, the formation of the refractory metal silicides by MEVVA implantation is discussed in terms of the beam heating effect caused by high current ion implantation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359537
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  • 10
    Electronic Resource
    Electronic Resource
    Solid-state reaction to synthesize Ni-Mo metastable alloys (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3351-3356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the Ni-Mo system, amorphous alloys and three metastable crystalline (MX) phases, i.e., an hcp (hcp-I), an enlarged hcp (hcp-II), and a fcc phase, were synthesized by solid-state reaction in the Ni-rich multilayers. An interesting point is that with increasing the annealing temperature, the hcp-I phase was formed first in the Ni67Mo33 film and then turned amorphous, while in the Ni75Mo25 film, the amorphous phase was formed first and then changed into the hcp-I phase. The compositions of three MX phases were determined experimentally. A free-energy diagram of the Ni-Mo system was established by calculating the free energies of the amorphous phase and the three MX phases, as well as those of the solid solutions and the related compounds on the basis of the model of Niessen et al. [CALPHAD 7, 51 (1981)] and Alonso's method [Solid State Commun. 46, 765 (1983)]. The calculated free-energy diagram can give relevant interpretation to the observed phase formation behaviors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357459
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