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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 4898-4906 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have measured the infrared photodissociation spectra of argon clusters containing SiF4, as a function of the cluster size n (for n≤ 103) using molecular beam laser spectroscopy. The clusters were produced by both the conventional seeded expansion of a dilute mixture and by a "pickup'' method where, upon colliding with it, the chromophore sticks to the surface of a cluster made in a neat solvent expansion. Furthermore, the spectra of small SF6/Arn clusters (n≤50) have been remeasured with the improved resolution resulting from the use of two line and tunable isotopic CO2 lasers. These data, together with previously published data on SF6/Ar, indicate a remarkably different behavior for these two solute–solvent combinations. The preferred "site'' for SiF4 is at the surface of Ar clusters of all sizes, regardless of how the molecule is introduced to the cluster, while appreciable amounts of SF6 reside at the surface only when the cluster is large and the impurity is deposited onto the cluster surface. The behavior of SiF4 and SF6, together with the analogous behavior of other polyatomic chromophores, the IR spectra of which have been measured and reported previously [D. J. Levandier, M. Mengel, R. Pursel, J. McCombie, and G. Scoles, Z. Phys. D 10, 337 (1988); D. J. Levandier, S. Goyal, J. McCombie, B. Pate, and G. Scoles, J. Chem. Soc. Faraday Trans. 86, 2361 (1990)], can be rationalized in terms of molecular dynamics simulations of similar systems which are presented in the paper by Perera and Amar [L. Perera and F. G. Amar, J. Chem. Phys. 93, 4884 (1990)]. The combination of the theoretical and experimental results confirm the usefulness of infrared photodissociation spectroscopy for the study of the structure of clusters and suggest that assuming any particular location for an impurity in a cluster in the absence of experimental evidence or, at least, a dynamics calculation, can easily lead to wrong conclusions.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2026-2030 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a reliable method to account for the magnetoresistance of resistance sensors which are used as thermometers in many low temperature (T≤20 K) experiments carried out in high magnetic fields (to 31 T). To apply the method, a set of isothermal magnetoresistance data, and a zero magnetic field temperature calibration are first necessary. A simple algorithm, which uses this data set, can then be applied to compute the temperature from the measured resistance at any field. The method is particularly useful for temperature dependent measurements at fixed field, or where, in cases where the temperature may change unpredictably during a change in magnetic field. We apply this method to the treatment of data in two separate experiments with the two different thermometers, RuO2 (below 1 K) and Cernox (above 1 K) sensors, respectively. © 1999 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6198-6200 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlation is reported between perpendicular anisotropy and in-plane lattice strain in Co/Pt multilayers. (Cox/Pty)n samples, where x, y are the thickness of the individual Co and Pt layers and n is the number of repeats that were prepared by molecular beam epitaxy and studied by means of polar magneto-optic Kerr effect and transmission electron microscopy. Kerr rotation data and electron diffraction experiments show that the largest perpendicular anisotropy and square hysteresis loop occur when x=3 A(ring) while the Pt layers are subjected to about −2% in-plane strain. As Co thickness increases, Co and Pt layers gradually lose coherency and the magnetic anisotropy goes from perpendicular to planar. This is accompanied by a relaxation of lattice strain in both Co and Pt layers. The close relationship between magnetic anisotropy and lattice strain can be explained as magnetoelastic anisotropy or stress anisotropy effect due to lattice mismatch between the adjacent epitaxial layers.
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 478-480 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically measured the room-temperature photoluminescence spectra with a two-band structure from porous silicon (PS), as a function of excitation wavelengths in a wavelength range from 260 to 460 nm. Each spectrum can be fitted by two Gaussian functions centered at about 610 and 700 nm, the intensities of the two bands change with excitation wavelength and the intensity maxima occur when the excitation wavelength is about 340 and 400 nm, respectively. When the excitation wavelength exceeds 420 nm, the band at 610 nm is very weak. The above phenomena can be accounted for in the quantum confinement/luminescence centers model [G. G. Qin and Y. Q. Jia, Solid State Commun. 86, 559 (1993)], where it is supposed that there are two kinds of luminescence centers in SiOx layers covering the nanoscale silicon units in PS. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7615-7617 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous Si (PS) layers are prepared by stain etching in a HF/NaNO2 solution on both p- and n-type crystal Si substrates, and are characterized by photoluminescence (PL), electron paramagnetic resonance (EPR), and infrared absorption (IR) spectroscopy. The PL spectra under 488 nm laser excitation exhibit a strong peak at 680–720 nm for various samples of different substrate parameters and remain stable upon aging in air or γ irradiation; as-etched (∼20 min in air before measurement) and aged (for up to six months) samples show no detectable EPR signal but the γ-irradiated samples show an isotropic g=2.006 signal of peak-to-peak linewidth of 1.1 mT supporting an amorphous Si structure; the IR spectra show both hydrogen and oxygen related IR modes in the as-etched samples and the former decreases with aging time in air while the latter increases. Comparing our results with those of anodically etched PS samples we conclude that: (1) the PL peak position of the stain PS seems to be unique and stable as compared with that of the anodic PS varying in 620–830 nm; (2) the isotropic EPR signal of the stain PS reflects no crystallinity, in contrast with the anisotropic signal of the anodic PS; and (3) obvious oxidation in the as-etched stain PS is also in contrast with the nonobservation of oxygen-related IR modes in the as-etched anodic PS. We discuss the results in terms of structural properties and PL mechanism of PS.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2006-2009 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible electroluminescence (EL) has been reported from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si diodes at room temperature. The Si-rich silicon oxide films, with thickness of about 40 A(ring), were grown using the magnetron sputtering technique. At forward bias of 4 V, EL spectra with peak energy of 1.9 eV and full width at half maximum of 0.5 eV can be observed from diodes with such extra thin Si-rich oxide films having not been annealed. EL peak energy shows a small red shift under low forward bias but does not shift again when increasing the bias further. Annealing at 800 °C, EL spectra widen and show several shoulders at about 1.5, 2.2, and 2.4 eV, and the EL peak energy shows blue shift with increasing forward bias. These results are shown to be consistent with light emission at several types of luminescence centers in the Si-rich silicon oxide films. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 257-264 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconducting properties of binary and ternary niobium compounds for rf applications are investigated. The materials under study are niobium nitride (NbN), niobium-titanium nitride (NbTiN), and niobium tin (Nb3Sn). Preparation techniques of the compounds are discussed. NbN and NbTiN are obtained by thermal reaction of bulk Nb in nitrogen atmosphere. Nb3Sn has been obtained using a technique originally developed for high-field magnet fabrication and modified to be applied to rf cavity production. The experimental apparatus and measurement technique are described. In particular the raw experimental data have been carefully analyzed to obtain important informations on fundamental material parameters. The effect of field penetration in the superconductor and the influence on the experimental results of the normal metallic substrate on which the superconductor is grown is also considered. The measurements show that NbN and Nb3Sn are effectively potentially good materials for rf applications due to their low theoretical BCS surface resistance. So far the results obtained with NbTiN are more difficult to interpret because the quality of the material did not allow sufficiently accurate collection of data. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1873-1881 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic weak coupling between superconducting fine filaments of multifilamentary NbTi wires for high-energy-physics applications (dipole magnets for large hadron collider at CERN) is studied through ac magnetic measurements down to very low frequencies (0.5 Hz). The shielded and trapped magnetic fluxes are measured versus the temperature at fixed ac field superimposed on a constant dc field. The measured curves look like measurements on high-Tc superconductors with the characteristic two maximum values of the trapped magnetic flux. One of these two peaks can be related to the superconducting transition of NbTi filaments, the other one to the weak coupling between the filaments. The measurements of the field and the temperature dependence of the latter peak allow the critical current of the weak coupling versus the field to be calculated giving interesting information about the proximity effect in the superconducting-normal-superconducting array.
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 7183-7185 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using a well-tested tight-binding potential, we have studied all twenty-four isolated-pentagon isomers of the C84 fullerene. Unlike C76, the helical D2 isomer of C84 is energetically very unfavorable. Two isomers which have D2 and D2d symmetries are found to be much more stable than the rest. The energies of these two isomers are so close that they may coexist in synthesis.
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