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  • 1
    Electronic Resource
    Electronic Resource
    The relation between positive charge and breakdown in metal-oxide-silicon structures (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1947-1956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relation between positive-charge accumulation at the Si-SiO2 interface and the occurrence of high-field breakdown in metal-oxide-silicon structures has been investigated. Oxides having different hole-trapping properties were prepared with the addition of short rapid thermal anneals in O2. Experiments testing hole trapping, high-field stressing, the initial current transients at constant gate voltage, and breakdown statistics were performed on these oxides to examine the correlation between positive charge and breakdown. The conclusion is that positive-charge generation is only one of the processes occurring during high-field stress but is not the main cause for breakdown. Large current increases were observed for oxides that have large hole-trapping efficiencies, but the current increase is followed by fast current decay. The mechanism causing the current decay was investigated and was found to be an intrinsic mechanism which is related to the neutralization of the positive charge. These processes always accompany the formation of positive charge and explain why the effectiveness of the positive charge in causing current runaway is inhibited.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338043
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  • 2
    Electronic Resource
    Electronic Resource
    SiO2-induced substrate current and its relation to positive charge in field-effect transistors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 824-832 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data are presented for the substrate current (holes), which accompanies electron injection into the oxide of n-channel field-effect transistor structures, in the tunneling regime. Dependencies of the effect on oxide thickness and on the metal gate material were investigated. An inverse relation was found between the initial rise time of oxide current transients and both the electron and hole currents. It is shown that these initial current increases are related to positive charge, therefore a correlation exists between the positive charge and electron or hole currents. The strength of impact ionization in SiO2 is discussed on the basis of band-structure arguments and it is concluded that there are difficulties in explaining the substrate current by impact ionization. A technique for fast measurements of capacitance-voltage shifts at the end of an applied high field pulse is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336605
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of the SiO2-induced substrate current in silicon field-effect transistors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 443-452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental investigation is presented for the substrate current (holes) appearing in n-channel field-effect transistors having SiO2 as their gate insulator. In these experiments, the gate is biased by a high and positive voltage, causing an electron current to be injected from the device channel into the oxide. This current is accompanied by the substrate current whose origin is not clear. The experiments were performed by application of short pulses (400 μsec) to the gate. It is shown that the substrate current is too large to be explained by simple electron tunneling from the silicon valence band into the oxide. Temperature-dependence measurements, down to 20 K, show that some of the data are not consistent with models for hole transport from the oxide into the silicon valence band. It is argued that the substrate current may be related to the energy loss experienced by hot electrons as they traverse the oxide. It is further argued that the same mechanism responsible for the substrate current may produce positive charge at the injecting electrode and thus lead to breakdown in thin oxide devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334771
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interface (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 418-425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two experimental observations are reported concerning the degradation of the Si–SiO2 interface during electron injection in metal-oxide-semiconductor structures. First, the generation of the interfacial positive charge during avalanche injection can be strongly inhibited by employing magnesium, instead of aluminum, as gate metal, or enhanced by employing gold. This correlates with the different work functions of the metals. Second, during negative bias high-field injection in Al-gate capacitors with thin oxides ((approximately-less-than)100 A(ring)), a threshold in gate voltage, of 7–8 V, is found for the generation of the positive charge. Both observations are consistent with a model which assumes that holes generated in the anode by hot electrons, via emission of surface plasmons, are injected into the SiO2 and are subsequently trapped at the Si–SiO2 interface. Other possible mechanisms are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334767
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  • 5
    Electronic Resource
    Electronic Resource
    Positron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5606-5609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350540
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  • 6
    Electronic Resource
    Electronic Resource
    Positron annihilation at the Si/SiO2 interface (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 530-532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that Sint depends directly on holes at interface states or traps at the Si/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350694
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  • 7
    Electronic Resource
    Electronic Resource
    Ultrathin oxide-nitride-oxide films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1248-1250 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the thickness limit of a thin nitride film which can withstand reoxidation is reduced to about 3.5 nm when it is deposited in situ on a thin-deposited oxide film. The deposited oxide apparently provides a better surface for nitride nucleation and initial growth. Using this finding an oxide-nitride-oxide (ONO) film as thin as 4.6 nm was fabricated and shown to have good electrical properties and low defect density. The current leakage through the film was close to the acceptable limit in dynamic-random-access-memory technology. It was also found that electron trapping is substantially higher in ONO films produced by reoxidation than in films having a top deposited oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103499
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  • 8
    Electronic Resource
    Electronic Resource
    Centroid shift of γ rays from positron annihilation in the depletion region of metal-oxide-semiconductor structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 86-88 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using metal-oxide-semiconductor (MOS) structures, the shift of centroid (peak) of γ-ray energy distributions emitted from positron annihilation has been measured as a function of incident positron energy. The Doppler centroid shift was found to be consistent with the positron motion in the MOS depletion region. The results are described by a one-dimensional positron diffusion model, and provide information on "effective'' positron diffusion length under applied field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104399
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