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  • 1
    Electronic Resource
    Electronic Resource
    Nonradiative recombination at GaAs homointerfaces fabricated using an As cap deposition/removal process (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3163-3165 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs homointerfaces have been grown by molecular beam epitaxy using the steps of GaAs growth, As cap deposition, wafer storage, thermal desorption of the As cap, and GaAs overgrowth. As cap layers with a thickness of up to 7.8 μm were deposited and the wafers were stored for 3–7 days in ultrahigh vacuum (UHV) or under atmospheric conditions. Nonradiative recombination originating from the GaAs homointerface of wafers stored in UHV could not be detected (interface recombination velocity S(very-much-less-than)1000 cm/s), however, significant nonradiative recombination (S=104–105 cm/s) was found for all GaAs homointerfaces where wafer storage occurred under atmospheric conditions. This result demonstrates that the As cap deposition/removal process is inadequate for GaAs surface protection in a fabrication facility. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121580
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  • 2
    Electronic Resource
    Electronic Resource
    Decomposition of trimethylgallium in the downstream region of a near afterglow plasma (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2411-2413 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The downstream region of a near afterglow plasma (Δt=100 μs) has been used to decompose trimethylgallium (TMGa) and the products analyzed using a mass spectrometer. The major TMGa dissociation products with a hydrogen plasma were identified as methane and ethane while with a helium plasma ethane, ethylene, and acetylene were the main dissociation species. Time-resolved optical emission originating from the downstream reaction zone shows that decomposition of TMGa occurs primarily via photodissociation with the hydrogen plasma while both photon and metastable species (He 21 S and 23 S) contributed to the TMGa decomposition with the helium plasma. VUV transmitting and VUV absorbing windows placed between the upstream hydrogen plasma and the downstream TMGa source provided further direct evidence of the role of VUV photodissociation in the TMGa decomposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102030
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature epitaxial growth and photoluminescence characterization of GaN (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2317-2319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of GaN on sapphire substrates have been grown by metalorganic chemical-vapor deposition at a deposition temperature as low as 400 °C, which is the lowest temperature for successful epitaxial growth of GaN by any technique. This is achieved by controlling the low flow rate of the source gases and by first depositing an AlN buffer layer at 400 °C. Low-temperature photoluminescence measurements have been employed to study the optical properties of the films deposited at different temperatures. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112729
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  • 4
    Electronic Resource
    Electronic Resource
    Diamond growth on turbostratic carbon by hot filament chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7235-7240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films were grown on turbostratic carbon (TC) pregrown on Cu substrates by hot filament chemical vapor deposition. Auger electron spectroscopy, Raman spectroscopy, x-ray diffraction, infrared absorption spectroscopy, and scanning electron microscopy were used to characterize both the TC and the diamond films. It was shown that the TC films could form on Cu at low temperatures (≈650 °C) with the catalysis of Mo and that diamond crystallites rapidly formed on TC in less than 10 min at higher temperature (≈1000 °C). The sp3 bonds were found to coexist with sp2 bonds in TC. The sp3 bonds in TC provide nucleation sites for diamond crystals and improve the nucleation rate at the early stage of deposition of diamond on TC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355013
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  • 5
    Electronic Resource
    Electronic Resource
    Plasma-assisted decomposition of trimethylarsine (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3329-3332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The downstream near afterglow region of a hydrogen plasma is used to decompose and convert trimethylarsine (TMAs) into methylarsine homologs [(CH3)3−xAsHx, where x=1,2,3] including that of arsine (x=3). Approximately 30%, 17%, and 10% of the TMAs is converted into dimethylarsine (DMAs), monomethylarsine (MMAs), and arsine, respectively, while 28% remains undecomposed. Hydrogen is replaced by deuterium to isotopically verify that the origin of the arsenic hydrogenation occurring during gas conversion arises from both the plasma gas and fragmented hydrogen from the TMAs. Deuterium tagging of the MMAs, DMAs, and hydrocarbon byproducts is consistent with TMAs decomposition via plasma initiated CH3 radical removal and explains why the predominant light stable hydrocarbon produced is methane while ethane and acetylene account for the main higher hydrocarbons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349266
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  • 6
    Electronic Resource
    Electronic Resource
    The basis for the symmetric irreducible representations of SO(9) (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 442-446 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: An explicit basis is constructed for the symmetric irreducible representation (irrep) of SU(9)&supuline;SO(9)&supuline;SO(5)×SU1(2)×SU2(2). It is also indicated how good angular momentum states can be constructed. The techniques used are based on the well-known tensor algebra for the infinitesimal generators of simple Lie groups.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527239
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  • 7
    Electronic Resource
    Electronic Resource
    The physical basis of an n g-boson system (1987)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 2192-2193 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The mathematical group chain of an n g-boson system is SU(9)⊃SO(9)⊃ SO(5)×SU1(2)×SU2(2)∪SUa(2)×SUb(2). In this paper, the mathematical basis of this group chain is obtained by using the briefer method and then constructing the states of n g-bosons with good angular momentum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527433
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  • 8
    Electronic Resource
    Electronic Resource
    A study of a microwave cavity tuned oscillator (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3631-3632 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: By using a microwave cavity tuned oscillator (MCTO), the relative dielectric constant ε of nonpolar dielectric fluid was measured with high accuracy. The theory of this technique was studied in detail. A new formula for evaluating the uncertainty of the measured ε was derived. From the formula, we have found that MCTO has a locking characteristic and therefore only operates in certain discrete regions. We have also found that a higher resonant frequency f of the MCTO, a longer delay time of the delay line, and a higher quality factor of the cavity Q lead to a higher accuracy of the measurement. When the values of the above parameters are taken properly, the uncertainty measured ε by the MCTO may become as small as an order of 10−5. The ε of saturated liquid nitrogen was measured by this approach and the experimental results agree very well with the values calculated by our formula. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147127
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  • 9
    Electronic Resource
    Electronic Resource
    Larger magnetocaloric effect in two-layered La1.6Ca1.4Mn2O7 polycrystal (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7975-7977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetocaloric effect in La1.6Ca1.4Mn2O7 polycrystal with the layered Sr3Ti2O7-type perovskite structure has been studied. It is found that the magnetic entropy change of La1.6Ca1.4Mn2O7 is comparable to that of Gd, but smaller and more broadened than that of La0.8Ca0.2MnO3. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369387
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  • 10
    Electronic Resource
    Electronic Resource
    Rapid removal for photoresist by a large-area electron beam (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5180-5182 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid removal of photoresist assisted by a large-area electron beam in oxygen atmosphere has been performed. The removal rate depended upon the pressure, flow rate of oxygen, and the power density of the electron beam. The maximum removal rate of 2500 nm/min for photoresist was one order of magnitude higher than that of conventional plasma processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338294
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