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  • American Institute of Physics (AIP)  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Formation and decay mechanisms of electron–hole pairs in amorphous SiO2 (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1147-1149 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present theoretical evidence for the creation of an electron–hole pair at an edge-sharing SiO4 site that is supposed to exist in a-SiO2 as an intrinsic structural defect. The present electron–hole pair consists of a nonbridging oxygen hole center and an E′ center, but these paramagnetic defects do not form a close pair but are separately located by over ∼4 Å. The subsequent decay mechanism along with the related radiolytic process is also discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448173
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  • 2
    Electronic Resource
    Electronic Resource
    Structure and formation mechanism of the Eα′ center in amorphous SiO2 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2730-2732 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We provide a possible formation mechanism for one of the Si-related paramagnetic centers in amorphous silica, Eα′, which is stable only below 200 K, on the basis of the quantum-chemical calculations. We show that the divalent Si defect can trap a hole, resulting in two different types of paramagnetic centers that are consistent with the experimental spectral features for Eα′. The highly anisotropic symmetry and the isotropic hyperfine coupling constants observed for one of the Eα′- center variants are reproduced by the present model. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1369147
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  • 3
    Electronic Resource
    Electronic Resource
    Mechanism of electron trapping in Ge-doped SiO2 glass (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 359-361 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a possible mechanism of electron trapping in Ge-doped SiO2 glass on the basis of first-principles quantum chemical calculations on clusters of atoms modeling the local structures in the glassy system. The calculations suggest that the so-called "Ge(1) and Ge(2)" centers are distinctly different electron centers rather than GeO4− variants and that an electron trapped at an oxygen vacancy site is a promising candidate for Ge(2). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383273
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