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  • 1
    Electronic Resource
    Electronic Resource
    Formation and decay mechanisms of electron–hole pairs in amorphous SiO2 (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1147-1149 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present theoretical evidence for the creation of an electron–hole pair at an edge-sharing SiO4 site that is supposed to exist in a-SiO2 as an intrinsic structural defect. The present electron–hole pair consists of a nonbridging oxygen hole center and an E′ center, but these paramagnetic defects do not form a close pair but are separately located by over ∼4 Å. The subsequent decay mechanism along with the related radiolytic process is also discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448173
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanism of electron trapping in Ge-doped SiO2 glass (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 359-361 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a possible mechanism of electron trapping in Ge-doped SiO2 glass on the basis of first-principles quantum chemical calculations on clusters of atoms modeling the local structures in the glassy system. The calculations suggest that the so-called "Ge(1) and Ge(2)" centers are distinctly different electron centers rather than GeO4− variants and that an electron trapped at an oxygen vacancy site is a promising candidate for Ge(2). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383273
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and formation mechanism of the Eα′ center in amorphous SiO2 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2730-2732 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We provide a possible formation mechanism for one of the Si-related paramagnetic centers in amorphous silica, Eα′, which is stable only below 200 K, on the basis of the quantum-chemical calculations. We show that the divalent Si defect can trap a hole, resulting in two different types of paramagnetic centers that are consistent with the experimental spectral features for Eα′. The highly anisotropic symmetry and the isotropic hyperfine coupling constants observed for one of the Eα′- center variants are reproduced by the present model. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1369147
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  • 4
    Electronic Resource
    Electronic Resource
    Preparation of Li2B4O7 thin films by sol-gel method (1990)
    Springer
    Journal of materials science 9 (1990), S. 796-800 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00720162
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  • 5
    Electronic Resource
    Electronic Resource
    Third-Order Nonlinear Optical Properties and Dielectric Properties of Pb-Complex Perovskite Thin Films Prepared by Sol-Gel Method (1997)
    Springer
    Journal of sol gel science and technology 9 (1997), S. 211-218 
    Details
    ISSN: 1573-4846
    Keywords: 3rd- and 2nd-NLO ; dielectric constant ; ferroelectric Pb-complex perovskites ; sol-gel method ; morphotropic phase boundary
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The third-order nonlinear optical properties of the sol-gel derived Pb(Fe1/2Nb1/2)O3-PbTiO3 (PFN-PT) thin films have been investigated by the THG method. The (3) values of PFN-PT thin films increased from 3.2 × 10-12 esu (PT) to 8.5 × 10-12 esu (PFN) with increasing content of Fe3+ ions which possessed very high second-hyperpolarizability, γ (Fe2/3O). It was experimentally confirmed that complex oxides such as ABO3-type perovskites consisting of large non-transition metal A-site cations and small transition metal B-site cations exhibited high χ(3) as expected from Lines' model. It was also found that the χ(3) values of complex oxides could be estimated from the second-hyperpolarizabilities of the constituent single oxides reported so far. Because of the large remanent polarization, PT thin films may exhibit the highest χ(3) among the ferroelectric PFN-PT thin films studied in the present work. The maximum dielectric constant,ɛ , of 1990 at room temperature was obtained for 0.5PFN · 0.5PT thin films, whose composition corresponds to so-called morphotropic phase boundary (MPB).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1026429600633
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  • 6
    Electronic Resource
    Electronic Resource
    Third-order nonlinear optical properties and dielectric properties of Pb-complex perovskite thin films prepared by sol-gel method (1997)
    Springer
    Journal of sol gel science and technology 9 (1997), S. 211-218 
    Details
    ISSN: 1573-4846
    Keywords: 3rd- and 2nd-NLO ; dielectric constant ; ferroelectric Pb-complex perovskites ; sol-gel method ; morphotropic phase boundary
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The third-order nonlinear optical properties of the sol-gel derived Pb(Fe1/2Nb1/2)O3-PbTiO3 (PFN-PT) thin films have been investigated by the THG method. The χ(3) values of PFN-PT thin films increased from 3.2×10−12 esu (PT) to 8.5×10−12 esu (PFN) with increasing content of Fe3+ ions which possessed very high second-hyperpolarizability, ψ(Fe2/3O). It was experimentally confirmed that complex oxides such as ABO3-type perovskites consisting of large non-transition metal A-site cations and small transition metal B-site cations exhibited high χ(3) as expected from Lines' model. It was also found that the χ(3) values of complex oxides could be estimated from the second-hyperpolarizabilities of the constituent single oxides reported so far. Because of the large remanent polarization, PT thin films may exhibit the highest χ(3) among the ferroelectric PFN-PT thin films studied in the present work. The maximum dielectric constant, ε, of 1990 at room temperature was obtained for 0.5PFN·0.5PT thin films, whose composition corresponds to so-called morphotropic phase boundary (MPB).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02439400
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  • 7
    Electronic Resource
    Electronic Resource
    Superconducting properties of the lithium-substituted YBa2Cu4O8 prepared by the sol-gel method (1996)
    Springer
    Journal of materials science 31 (1996), S. 2975-2979 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effects of the lithium substitution for copper on the properties of the superconducting YBa2Cu4O8 were studied. Single-phase YBa2Cu4−x LixO8 was successfully prepared by the sol-gel method under ambient pressure over a composition range of 0⩽x⩽ 0.08, while impurity phases appeared at x=0.10 and 0.20. The lattice constants of YBa2Cu4−x Li x O8 were almost invariant with increasing lithium content x. The superconducting transition temperature decreased monotonically with increasing x in the range, 0⩽x⩽0.08. The suppression of superconductivity was discussed in terms of the impurity effect in the CuO2 planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00356011
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  • 8
    Electronic Resource
    Electronic Resource
    Photoelectrochemical properties of sol–gel-derived anatase and rutile TiO2 films (1998)
    Springer
    Journal of materials science 33 (1998), S. 3655-3659 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Anatase and rutile film electrodes with comparable porosities were prepared by the sol–gel dip-coating method, and the photoelectrochemical properties were studied based on photocurrent measurement and impedance analysis in a three-electrode wet cell. The photocurrent was found to increase with the donor density, both in anatase and rutile electrodes. For the same donor density, however, rutile electrodes exhibited higher photocurrents than anatase electrodes, which was ascribed to the more beneficial bandgap structure of the former.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004667631837
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  • 9
    Electronic Resource
    Electronic Resource
    Superconductivity of La2−x Sr x CuO4 with high strontium concentration by sulphur doping (1993)
    Springer
    Journal of materials science 28 (1993), S. 3874-3878 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effects of sulphur substitution for oxygen on the structure and properties of nonsuperconducting La2−x Sr x CuO4, where x=0.26 and 0.30, have been studied. In La2−x Sr x CuO 4−y -S y , the sulphur-doped samples exhibit superconducting transition at 37–39 K and a larger Meissner effect than undoped samples. It was found that the superconductivity of La2−x Sr x CuO4−y S y is apparently determined by the value of x−y and the strontium concentration region in which La2−x Sr x CuO4 shows superconductivity shifts to higher strontium concentrations with sulphur doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00353194
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  • 10
    Electronic Resource
    Electronic Resource
    Preparation of La0.5Li0.5TiO3 perovskite thin films by the sol–gel method (1997)
    Springer
    Journal of materials science 32 (1997), S. 2063-2070 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Perovskite La0.5Li0.5TiO3 (LLT) thin films, 0.2–1 μm thick, were deposited on non-alkali aluminoborosilicate glass substrates (NA substrates) and glass substrates with ITO (indium tin oxide) coatings (ITO substrates) by the sol–gel method. Alkoxide-based solutions containing titanium alkoxide, lithium alkoxide and lanthanum alkoxide and acetate-based solutions containing titanium alkoxide, lithium acetate and lanthanum acetate, were used as coating solutions. Impurity phases tended to be precipitated on heat treatment in the films derived from the acetate-based solutions. Addition of acetylacetone or partial substitution of lead for lithium in the acetate-based solutions, however, was effective in suppressing the precipitation of impurity phases. Preferred orientation of the LLT (1 1 1/2) plane was observed in the films prepared from the acetate-based solutions when NA substrates were used, whereas the employment of the alkoxide-based solutions or ITO substrates and the partial substitution of lead for lithium, reduced the preferred orientation. The electrical conductivity of the films was much lower than the values reported for the sintered materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018566620564
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