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  • 1
    Electronic Resource
    Electronic Resource
    Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained-layer single quantum wells and superlattices on GaAs substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5233-5239 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction (RHEED) oscillations that continued up to three cycles were observed during metalorganic molecular-beam epitaxial growth of CdSe on a ZnSe buffer grown on a GaAs substrate, showing two-dimensional layer-by-layer growth despite the large lattice mismatch (6.85%). Based on this result, we could definitely control the growth of CdSe/ZnSe strained-layer single quantum wells with well widths of 1–3 monolayers and of short-period superlattices under in situ RHEED monitoring. Optical properties strongly demonstrated the successful formation of well-defined structures consisting of these highly strained II-VI semiconductor multilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352005
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  • 2
    Electronic Resource
    Electronic Resource
    Energy band-gap calculations of short-period (ZnTe)m(ZnSe)n and (ZnS)m(ZnSe)n strained-layer superlattices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 908-914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the calculations of energy band gaps based on the semiempirical tight-binding model for short-period (ZnTe)m(ZnSe)n and (ZnS)m(ZnSe)n strained-layer superlattices (SLSs). During the calculation, much attention has been paid to the modeling of strain effect. It is found that (ZnTe)m(ZnSe)n superlattices grown on InAs, InP, and GaAs substrates show very different electronic properties from each other, which is consistent with experimental results now available. Assuming that the emission observed for (ZnTe)m(ZnSe)n SLS originates from intrinsic luminescence, we obtain an unstrained valence-band offset of 1.136±0.1 eV for this superlattice. On the other hand, the band gap of (ZnS)m(ZnSe)n superlattice grown coherently on GaP is found to exhibit a much stronger structure dependence than that grown coherently on GaAs. The difference of energy gap between superlattice with equal monolayers (m=n) and the corresponding alloy with equal chalcogenide composition is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345752
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  • 3
    Electronic Resource
    Electronic Resource
    Thickness effect on hydrogen plasma treatment on polycrystalline silicon thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3013-3014 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter studies the hydrogen plasma effects on the resistivity, effective free carrier concentration, and mobility of As+- and BF+2-doped polycrystalline silicon (polysilicon) thin films of various thicknesses. It is found that the resistivity increases while the effective free carrier concentration decreases after the plasma treatment as the thickness of the polysilicon film decreases. The mobility typically tends to decrease for the thicker ((approximately-greater-than)60 nm) polysilicon film, but to increase for the thinner (〈60 nm) polysilicon film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114261
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  • 4
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    Mechanical properties and magnetocaloric effects in La(Fe, Si)13 hydrides bonded with different epoxy resins (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-02-12
    Description: The mechanical properties and magnetocaloric effect (MCE) of bonded La(Fe, Si) 13 hydrides have been studied in detail. The mechanical strength increases with increasing the grade of epoxy resin from E-20 to E-51. This occurs because more pores and boundaries are filled with high grade resin since high epoxide content increases the degree of crosslinking and reduces the viscosity and shrinkage of resin. The compressive strength reaches 162 MPa for the bonded LaFe 11.7 Si 1.3 C 0.2 H 1.8 with 3 wt. % E-51, which is 35% higher than that of bulk LaFe 11.7 Si 1.3 C 0.2 compound (120 MPa). The mass Δ S M values remain almost same in bonded hydrides and are in a good agreement with the theoretical value. The maximum volumetric Δ S M values are 61.8, 58.0, and 54.7 mJ/cm 3 K for bonded hydrides with epoxy resins E-20, E-44, and E-51, respectively, much higher than those of some magnetocaloric materials in same temperature range. The improved mechanical properties and large MCE indicate that bonded LaFe 11.7 Si 1.3 C 0.2 H 1.8 is a promising material for room temperature magnetic refrigeration.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 5
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    Large reversible magnetocaloric effect in antiferromagnetic HoNiSi compound (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-03
    Description: Magnetic properties and magnetocaloric effect (MCE) of intermetallic HoNiSi compound have been investigated systematically. It is found that HoNiSi exhibits antiferromagnetic (AFM) state below the Néel temperature T N of 3.8 K, which is quite close to the liquid helium temperature (4 K). A giant MCE without hysteresis loss is observed in HoNiSi, which is related to the field-induced first-order metamagnetic transition from AFM to ferromagnetic states. For a magnetic field change of 2 T, the maximum values of magnetic entropy change (−Δ S M ) and adiabatic temperature change (Δ T ad ) are 17.5 J/kg K and 4.5 K, respectively. In addition, HoNiSi presents both large values of positive and negative Δ S M for the low field changes, i.e., the maximum −Δ S M values are 9.2 J/kg K around T N and −7.2 J/kg K below T N for the field changes of 1 and 0.5 T, respectively. A universal curve of Δ S M is successfully constructed by using phenomenological procedure, proving the applicability of universal Δ S M curve for AFM materials. The giant reversible MCE for relatively low magnetic field change makes HoNiSi attractive candidate for magnetic refrigerant materials around liquid helium temperature.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-10-22
    Description: This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast I D -V G and modulated peak/base pulse time I D -V D measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    Nonmonotonic variation of aging behavior in Fe-doped BaTiO3 ceramics (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-07-16
    Description: The investigation of ferroelectric aging effect in Fe-doped BaTiO 3 ceramics reveals that such effect is first strengthened and then suppressed with the increase content of Fe dopant. Such nonmonotonic variation of aging behavior is considered to be originated from the competition effects between increased concentration of oxygen vacancies and decreased c/a value on the formation of defect dipoles ( F e T i ′ − V o · · ) · . This study provides a feasible alternative method for modulating aging effect and will favor the applications of ferroelectrics.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    Research on a novel two-stage direct current hybrid circuit breaker (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-23
    Description: The DC hybrid circuit breaker based on high-speed switch (HSS) and parallel connected capacitor has been widely applied in the fault current breaking of DC system. However, when the current is commutated from HSS to the capacitor according to single-stage operation, the capacitor has to absorb a large amount of energy stored in the system inductance within very short time. Meanwhile, a high over-voltage rate of rise is especially prone to be produced between the contacts of HSS, which will lead to a failed breaking. As a result, a novel DC hybrid circuit breaker based on the two-stage operation is proposed and analyzed in this paper. By controlling the thyristors in the commutation branches, the fault current is fast commutated into the capacitor, which can not only realize the arcless open of HSS, but also decrease the over-voltage rate of rise significantly in comparison to the traditional single-stage operation. The simulation model of fault current breaking under different conditions in 10 kV medium voltage DC system is constructed. The simulated over-voltages of single-stage and two-stage operations in the case of fault current breaking are compared and analyzed. Finally, the fault current breaking test in the two-stage operation is investigated experimentally, which validates the feasibility and effectiveness of the simulation model well.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 9
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    Investigation of an X-band gigawatt long pulse multi-beam relativistic klystron amplifier (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-09-04
    Description: To achieve a gigawatt-level long pulse radiation power in X-band, a multi-beam relativistic klystron amplifier is proposed and studied experimentally. By introducing 18 electron drift tubes and extended interaction cavities, the power capacity of the device is increased. A radiation power of 1.23 GW with efficiency of 41% and amplifier gain of 46 dB is obtained in the particle-in-cell simulation. Under conditions of a 10 Hz repeat frequency and an input RF power of 30 kW, a radiation power of 0.9 GW, frequency of 9.405 GHz, pulse duration of 105 ns, and efficiency of 30% is generated in the experiment, and the amplifier gain is about 45 dB. Both the simulation and the experiment prove that the multi-beam relativistic klystron amplifier can generate a long pulse GW-level radiation power in X-band.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 10
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    Back-gate bias effect on nanosheet hybrid P/N channel of junctionless thin-film transistor with increased Ion versus decreased Ioff (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-11-05
    Description: A hybrid P/N channel junctionless (JL) thin-film transistor (TFT) with back-gate bias (V bg ) has been demonstrated. By applying negative bias of V bg  = −8 V in gate length of 50 nm shows excellent SS (  10 8 ), and high V th modulation. The increased I on simultaneously decreased I off via negative V bg is attributed to smaller surface E-field at ON-state, significantly reducing the impact on interface traps and thinner effective channel thickness at OFF-state, improving gate controllability. Hence, hybrid P/N JL-TFT with V bg is a promising for low power circuit, power management, and System-on-Chip applications.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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