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  • American Institute of Physics (AIP)  (28)
  • 1
    Electronic Resource
    Electronic Resource
    Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2751-2758 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the use of a near-field scanning microwave microscope to image the permittivity and tunability of bulk and thin film dielectric samples on a length scale of about 1 μm. The microscope is sensitive to the linear permittivity, as well as to nonlinear dielectric terms, which can be measured as a function of an applied electric field. We introduce a versatile finite element model for the system, which allows quantitative results to be obtained. We demonstrate use of the microscope at 7.2 GHz with a 370 nm thick Ba0.6Sr0.4TiO3 thin film on a LaAlO3 substrate. This technique is nondestructive and has broadband (0.1–50 GHz) capability. The sensitivity of the microscope to changes in permittivity is Δεr=2 at εr=500, while the nonlinear dielectric tunability sensitivity is Δε113=10−3 (kV/cm)−1. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150687
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  • 2
    Electronic Resource
    Electronic Resource
    Quantitative imaging of sheet resistance with a scanning near-field microwave microscope (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 861-863 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe quantitative imaging of the sheet resistance of metallic thin films by monitoring frequency shift and quality factor in a resonant scanning near-field microwave microscope. This technique allows fast acquisition of images at approximately 10 ms per pixel over a frequency range from 0.1 to 50 GHz. In its current configuration, the system can resolve changes in sheet resistance as small as 0.6 Ω/(square, open) for 100 Ω/(square, open) films. We demonstrate its use at 7.5 GHz by generating a quantitative sheet resistance image of a YBa2Cu3O7−δ thin film on a 5 cm diam sapphire wafer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120918
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  • 3
    Electronic Resource
    Electronic Resource
    Microwave near-field imaging of electric fields in a superconducting microstrip resonator (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2491-2493 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the use of a cryogenic near-field scanning microwave microscope to image microwave electric fields from superconducting and normal-metal microstrip resonators. The microscope employs an open-ended coaxial probe and operates from 77 to 300 K in the 0.01–20 GHz frequency range with a spatial resolution of about 200 μm. We describe the operation of the system and present microwave images of Cu and Tl2Ba2CaCu2O8 microstrip resonators, showing standing wave patterns at the fundamental and second harmonic frequencies. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122492
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  • 4
    Electronic Resource
    Electronic Resource
    Thin-film multilayer interconnect technology for YBa2Cu3O7−x (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 683-702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The construction of microelectronic circuits from high-transition-temperature (Tc) superconductors requires techniques for producing thin-film wires, insulating crossovers, and vias (window contacts) between wires. Together, these three components form a superconducting interconnect technology. The challenges encountered in developing such a technology for high-Tc superconductors involve factors associated with the materials, the circuits and the fabrication techniques. The use of pulsed laser deposition in conjunction with shadow mask patterning, photolithographic pattern definition, acid etching, ion-beam etching, and surface cleaning to produce multilayer interconnects from YBa2Cu3O7−x (YBCO) is discussed. These processes have been used to construct a variety of passive high-temperature superconducting components and circuits, including crossovers, window contacts, multiturn coils, and flux transformers. Integrated magnetometers incorporating superconducting quantum interference devices, multichip modules with semiconductor die bonded to YBCO interconnect structures, and analog-to-digital converters have also been successfully demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356469
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  • 5
    Electronic Resource
    Electronic Resource
    Closed-cycle refrigerator-cooled scanning SQUID microscope for room-temperature samples (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3281-3290 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have designed, built, and operated a scanning superconducting quantum interference device (SQUID) microscope that uses a closed-cycle refrigerator to cool a YBa2Cu3O7 (YBCO) dc SQUID to 77 K. The SQUID is mounted in custom vacuum housing that has a thin sapphire window that maintains thermal isolation of the SQUID while allowing samples to be imaged in air at room temperature. Samples are mounted on an x–y scanning table and can be brought to within about 60 μm of the SQUID for magnetic field imaging. The SQUID has an effective pick-up area of 1.2×10−9 m2 and a level of flux noise of 10.5 μΦ0/Hz1/2 in the white noise region (above 500 Hz). We describe the performance of the system and present images of a variety of samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384425
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of low-frequency noise in Al–Al2O3–Al single-electron transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6536-6540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the temperature dependence of the charge noise power spectral density Sq in two-junction Al–Al2O3–Al single-electron transistors at temperatures from 85 mK to 4 K. Although individual Lorentzians are often visible, the noise spectra are dominated by excess low-frequency noise with a power-law dependence on frequency f where Sq∝1/fβ and β(similar, equals)1. Below about 0.5 K, Sq is weakly dependent on the temperature T. Above 1 K, the charge noise Sq increases with T, and at 4 K Sq(approximate)10−4 e2/Hz at 1 Hz, about a factor of 100 greater than at 85 mK. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1312846
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  • 7
    Electronic Resource
    Electronic Resource
    Imaging of microwave intermodulation fields in a superconducting microstrip resonator (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2824-2826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinearities give rise to intermodulation distortion in superconducting microwave devices and currently limit their use to low power applications. We have developed a cryogenic imaging technique to spatially resolve intermodulation distortion and used it to image an 8.2 GHz high temperature superconducting Tl2Ba2CaCu2O8 microwave resonator. The images reveal that the fundamental and intermodulation electric fields obey a fixed relation throughout the device. We note that further refinements of intermodulation theory in resonant devices may be required to fully describe the data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125162
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  • 8
    Electronic Resource
    Electronic Resource
    Imaging of microwave permittivity, tunability, and damage recovery in (Ba, Sr)TiO3 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3180-3182 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the use of a near-field scanning microwave microscope to quantitatively image the dielectric permittivity and tunability of thin-film dielectric samples on a length scale of 1 μm. We demonstrate this technique with permittivity images and local hysteresis loops of a 370-nm-thick Ba0.6Sr0.4TiO3 thin film at 7.2 GHz. We also observe the role of annealing in the recovery of dielectric tunability in a damaged region of the thin film. We can measure changes in relative permittivity εr as small as 2 at εr=500, and changes in dielectric tunability dεr/dV as small as 0.03 V−1. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125270
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  • 9
    Electronic Resource
    Electronic Resource
    Imaging microwave electric fields using a near-field scanning microwave microscope (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 156-158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By scanning a fine open-ended coaxial probe above an operating microwave device, we image local electric fields generated by the device at microwave frequencies. The probe is sensitive to the electric flux normal to the face of its center conductor, allowing different components of the field to be imaged by orienting the probe appropriately. Using a simple model of the microscope, we are able to interpret the system's output and determine the magnitude of the electric field at the probe tip. We show images of electric field components above a copper microstrip transmission line driven at 8 GHz, with a spatial resolution of approximately 200 μm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123137
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetic permeability imaging of metals with a scanning near-field microwave microscope (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4404-4406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a scanning near-field microwave microscope which uses a loop probe to measure local magnetic properties of metallic samples on a length scale of 200 μm. We demonstrate imaging at 6 GHz through spatiallyresolved ferromagnetic resonance experiments on a single crystal of the colossal magneto-resistive material La0.8Sr0.2MnO3. We find the experimental results are qualitatively and quantitatively well described by a simple model of the system. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332978
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