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  • 1
    Electronic Resource
    Electronic Resource
    Rapid pressure measurement system utilizing the ruby fluorescence scale (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 663-665 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An inexpensive fluorescence spectrum measurement system for pressure measurement in a diamond anvil cell apparatus was constructed. A multichannel-type optical detector was based on a diode array image sensor and assembled to the system for rapid pressure estimation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139235
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  • 2
    Electronic Resource
    Electronic Resource
    Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 335-337 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of GaAs using an Ar+ laser beam is reported. The laser irradiation during growth in the substrate temperature range 400–525 °C forms a GaAs spot of 400 μm in diameter. The spot growth rate increases up to 1.3 μm/h with laser power and does not depend on the type of substrate conductivity. Temperature rise due to the irradiation is revealed to be 7° at 120 °C for the laser power of 500 mW (laser beam diameter 400 μm). A concentric circle pattern can be formed by diffracting a laser beam. These results strongly suggest that the growth rate enhancement arises from the photodissociation of metalorganic molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100962
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  • 3
    Electronic Resource
    Electronic Resource
    Carbon reduction in GaAs films grown by laser-assisted metalorganic molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 451-453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary-ion mass spectroscopy and cathodoluminescence (CL) studies were carried out on GaAs films grown by Ar+ laser-assisted metalorganic molecular beam epitaxy. The Ar+ laser irradiation leads to the formation of a 400-μm-diam spot. In the growth temperature range 425–500 °C, the carbon concentration within the spot is maintained at 1017 cm−3, while that in the area not irradiated by the laser increases from 1017 to 1019 cm−3. The process of decomposition of the triethylgallium molecules and the mechanism by which the carbon concentration is maintained by the laser irradiation are discussed in detail. Low-temperature CL spectra revealed that the CL signal intensity in the selectively grown spot was some ten times greater than that in the area not irradiated by the laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101872
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  • 4
    Electronic Resource
    Electronic Resource
    Low operating current self-sustained pulsation GaAlAs laser diodes with a real refractive index guided structure (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1211-1212 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new real refractive index guided GaAlAs laser which satisfies both low operating current and low noise characteristics by self-sustained pulsation. The structure has a planar active layer and a GaAlAs optical confinement layer which give large saturable absorber, and small internal loss. As a result, as operating current as low as 19.7 mA at an output power of 3 mW is obtained under self-sustained pulsation, leading to a relative intensity noise level less than −135 dB/Hz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112073
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  • 5
    Electronic Resource
    Electronic Resource
    Strain and quantum confinement energies in n-type modulation-doped lattice-mismatched InAsP quantum-well wires (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8456-8464 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature luminescence and magnetoluminescence experiments have been performed on n-type modulation-doped lattice-mismatched InAsxP1−x/InP quantum-well wires. From these experiments we can obtain information about the conduction-band subband structure, the electron effective mass, and consequently the conduction-band density of states. The doping level is high enough to populate several subbands in the conduction band which become observable in the luminescence spectra. The low-temperature luminescence spectra contain a distinct signature of the Fermi level at the high-energy slope. The zero-field wire luminescence exhibits an energy blue shift due to lateral quantum confinement within the wire and strain energy enlargement of the optical band gap. We have determined the separate energy contributions to the blue shift by high-field magnetoluminescence experiments. We have also calculated the (nonuniform) strain distribution and the strain-induced band shift within the wires. The theoretical results agree well with the experimental data. The information obtained on the subband structure and the electron effective mass can be used to estimate the length of the space-charge region in the doped area and the 1D carrier concentration in the quantum-well wires, without using any electrical contacts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362521
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  • 6
    Electronic Resource
    Electronic Resource
    1.3 μm InAsP compressively strained multiple-quantum-well lasers for high-temperature operation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4119-4121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature operation of InAsP-based laser diodes at 1.3 μm has been realized according to guidelines of a large conduction-band-offset material (ΔEc) with a large optical confinement factor (Γ). Using photoluminescence excitation spectroscopy measurements, it was found that the conduction-band offset of InAs0.52P0.48P/InGaAsP is the half of the band-gap energy difference (0.5 ΔEg), which is larger than that of conventional quaternary material systems. A strain-compensation growth technique enabled the fabrication of a large number of wells for large Γ. For broad-area laser diodes, the maximum operating temperature increased as the number of wells increased from 4 to 15. In buried heterostructure lasers with ten wells, with high-reflectivity coating on both facets, continuous-wave lasing operation at temperatures up to 150 °C was achieved with a characteristic temperature of 59 K (30〈T〈70 °C) demonstrating the suitability of InAsP for high-temperature operation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359497
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  • 7
    Electronic Resource
    Electronic Resource
    Longitudinal mode stability difference in Se- and Si-doped AlGaAs lasers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5344-5346 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The longitudinal mode behavior of AlGaAs lasers with n-type cladding layers doped with Se and Si is reported. The longitudinal mode of the lasers with highly Se-doped cladding layer is stabilized, and large hysteresis of mode jump is observed as temperature changes. In the case of highly Si-doped cladding layers, however, the mode hops to the adjacent one and no hysteresis is observed. These phenomena are explained by the difference in thermal activation energy between Se- and Si-related DX centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350551
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  • 8
    Electronic Resource
    Electronic Resource
    Densified silica glass after shock compression (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1651-1655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silica glasses were repeatedly densified by multiple shock reverberations in stainless-steel capsules. The limit of increase in density was about 2.47 Mg/m3 after the first shock loading. Further increase in density was observed after duplicate shock loading, but limited at about 2.55 Mg/m3. Triplicate shock loading was not so effective for the increase in density. The Raman spectra of recovered silica glasses had characteristics of densified silica glass with much higher density. The remarkable one was the enhancement of the line at 605 cm−1 called the D2 line, which was one of two narrow lines peculiar to the Raman spectrum of silica glass. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364021
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  • 9
    Electronic Resource
    Electronic Resource
    Double-wavelength laser array with InGaAsP/InGaAsP multiple quantum well grown by Ar ion laser-assisted metalorganic molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2449-2451 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports a laser diode array of InGaAsP/InGaAsP multiple quantum well (MQW) lasers, emitting at different wavelengths, grown by Ar ion laser assisted metalorganic molecular beam epitaxy. A separate confinement heterostructure MQW laser film was locally irradiated during well growth with an Ar ion laser and processed into a laser diode array having a 6 μm stripe width and 300 μm pitch. The laser diode with an irradiated MQW active layer operated at 1.40 μm; the laser diodes with nonirradiated MQW active layers operated at 1.28 μm. The threshold currents of the 300 μm-long laser diodes were 23 mA for the irradiated diode and 55 mA for the nonirradiated diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108148
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