ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Low-temperature luminescence and magnetoluminescence experiments have been performed on n-type modulation-doped lattice-mismatched InAsxP1−x/InP quantum-well wires. From these experiments we can obtain information about the conduction-band subband structure, the electron effective mass, and consequently the conduction-band density of states. The doping level is high enough to populate several subbands in the conduction band which become observable in the luminescence spectra. The low-temperature luminescence spectra contain a distinct signature of the Fermi level at the high-energy slope. The zero-field wire luminescence exhibits an energy blue shift due to lateral quantum confinement within the wire and strain energy enlargement of the optical band gap. We have determined the separate energy contributions to the blue shift by high-field magnetoluminescence experiments. We have also calculated the (nonuniform) strain distribution and the strain-induced band shift within the wires. The theoretical results agree well with the experimental data. The information obtained on the subband structure and the electron effective mass can be used to estimate the length of the space-charge region in the doped area and the 1D carrier concentration in the quantum-well wires, without using any electrical contacts. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362521
