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  • American Institute of Physics (AIP)  (3)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4516-4528 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the design, construction, and characterization of an X-band multiquantum electron paramagnetic resonance (MQEPR) microwave bridge, with MQ electron–electron double resonance and MQ electron–nuclear double resonance capabilities. The main feature of the bridge is the use of double-balanced mixers as double sideband modulators to generate multiple irradiation fields with variable frequency separation. The microwave source is a low phase noise Gunn diode oscillator, the frequency of which is translated by a nominal 300±Δf MHz. This approach, called double sideband/fixed filter (DSB/FF), allows the use of fixed bandpass microwave filters to reduce incident spurious products to at least −70 dBc. Each frequency is amplified separately to avoid system-generated intermodulation (IM) sidebands in the incident irradiation. As a result, the dominant source of system intermodulation is the nonlinearity in the receiver system, consisting of a low noise amplifier (LNA) and a double-balanced signal mixer. A detailed analysis of receiver-generated IM products is presented. The use of the loop-gap resonator with a high resonator efficiency parameter, Λ, and low Q is essential to achieve a balance between microwave power and system IM sidebands. It is shown that even at maximum incident power, the levels of these sidebands can be reduced to 51 dB below the MQEPR response by switching out the LNA. This permits the extension of MQEPR applications into systems where high power is required. The operation modes of the bridge are briefly described. Alternative bridge designs are considered and compared with the DSB/FF design. It is found that the DSB/FF approach gives the best overall performance with greater flexibility and compatibility with multiple operation modes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Varian Q-band E-110 microwave bridge for electron paramagnetic resonance (EPR) spectroscopy has been modified by addition of a low-phase noise Gunn diode oscillator of our own design, a low-noise GaAs field-effect transistor microwave signal amplifier, and a balanced mixer requiring high input power (10 mW) at the local oscillator port. The oscillator has previously been found to have −129 dBc/Hz phase noise, 22 dB lower than for the original klystron. Noise measurements indicate that the microwave amplifier and mixer reduce the overall receiver noise figure by 24.6 dB, a very significant improvement. It is shown that reduction of both phase noise and receiver noise are required in order to achieve full improvement in signal-to-noise ratio over the full range of available microwave power. Spectra of 1.6×10−6 M 15N-perdeutero TEMPONE (1-oxyl-2,2,6,6-tetramethyl-4-piperidone) and of 10−6 M Mn2+ are shown in order to demonstrate sensitivity.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 4010-4011 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Two low phase-noise Gunn diode X-band oscillators intended for use in electron paramagnetic resonance (EPR) spectroscopy are described. In the first, a 250-mW MA49159 Gunn diode oscillator (M/A-COM, Burlington, MA) is mounted in a coaxial transmission line that is closely coupled to a TE011 transmission cavity that in turn is loosely coupled to the output transmission line. The output power is 50 mW and the phase noise is −145 dBc/Hz at 100 kHz offset. In the second, two such coaxial assemblies are used with 500-mW MA49110 diodes for increased power. The output power is 150 mW and the phase noise is −150 dBc/Hz at 100-kHz offset. These phase noise values are in the range of 24–29 dB better than the specification for a normal high quality klystron used in commercial spectrometers.
    Type of Medium: Electronic Resource
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