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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial reactions on annealing Cu/Al multilayer thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6165-6169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film reactions of Cu/Al multilayer films were investigated by differential scanning calorimetry and transmission electron microscopy. Sequential intermetallic compound formation was found in the temperature range from 300 to 620 K. With excess copper present in the as-deposited trilayer and multilayer films, the observed sequence was CuAl2 and Cu9Al4, and the interfacial reactions were controlled by interfacial and grain boundary diffusion. The activation energies for the formation of CuAl2 and Cu9Al4 are 0.78±0.11 and 0.83±0.2 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355183
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Three-beam phase conjugation and mode competition in BaTiO3 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3926-3928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new configuration of phase conjugation (PC) with three beams in BaTiO3 crystal is demonstrated. When two beams are incident, they can generate their own self-pumped PC or mutually pumped PC depending on their intensity ratio. Upon the application of a third beam, one of the two mutually pumped beams is changed into a self-pumped PC. The other forms a double PC with the new beam. This configuration has more flexibility and functionality than that in the two-beam case. The analysis of mode competitions between self-pumped, mutually pumped, and double PC is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358451
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of crystallization of a mechanically alloyed Sm-Fe alloy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6146-6149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization of a mechanically alloyed Sm-Fe alloy was investigated. The results show that the Sm-Fe alloy prepared by mechanical alloying consists of amorphous Sm-Fe phase and crystalline α-Fe phase. The composition of the alloy is inhomogeneous, i.e., the surface of the as-milled powder is relatively poor in iron. The crystallization process involves the long-range diffusion of iron atoms and solid state reaction. After proper crystallization, the as-milled powder transforms into a Sm2Fe17 phase completely; no distinguishable crystalline α-Fe phase can be found. A metastable phase, which may be a Sm2Fe17 phase with the structure of hexagonal Th2Ni17 type, appears during the crystallization process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350423
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of epitaxial Tl2Ba2CaCu2O8 thin films at low temperature in pure argon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1845-1847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mirror-like Tl2Ba2CaCu2O8 thin films have been reproducibly prepared on (001)LaAlO3 substrates by dc magnetron sputtering using 80% argon and 20% oxygen and post-annealing at temperatures of 720–760 °C in 1 atm pure argon. X-ray diffraction patterns of θ-2θ scans, φ scans, and Read camera photographs prove that the thin films are strongly textured with the c-axis perpendicular to the substrate surfaces and epitaxially grown to the substrate with Tl2Ba2CaCu2O8(100) parallel to the LaAlO3(100). The zero resistance temperatures are in the range of 105.2–108.6 K for the 0.2–1.0-μm-thick films. The critical current density of 5.3×106 A/cm2 at 77 K has been obtained at zero magnetic field for a 0.4-μm-thick film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110805
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  • 5
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    Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-01-06
    Description: Quasi-free-standing epitaxial graphene grown on wide band gap semiconductor SiC demonstrates high carrier mobility and good material uniformity, which make it promising for graphene-based electronic devices. In this work, quasi-free-standing bilayer epitaxial graphene is prepared and its transistors with gate lengths of 100 nm and 200 nm are fabricated and characterized. The 100 nm gate length graphene transistor shows improved DC and RF performances including a maximum current density I ds of 4.2 A/mm, and a peak transconductance g m of 2880 mS/mm. Intrinsic current-gain cutoff frequency f T of 407 GHz is obtained. The exciting DC and RF performances obtained in the quasi-free-standing bilayer epitaxial graphene transistor show the great application potential of this material system.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    Magnetic, dielectric, and magnetoelectric properties in Sr2CoGe2O7 (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-03-31
    Description: We investigate the magnetoelectric effect in Sr 2 CoGe 2 O 7 , which has a two-dimensional magnetic interaction between Co ions in the ab plane. This compound shows a weak magnetism and field-induced magnetic transition below the temperature of 7 K. It does not exhibit electric polarization under zero magnetic field. However, by applying an external magnetic field, the electric polarization is induced around its Néel temperature and increases with increasing magnetic field. The induced electric polarization in Sr 2 CoGe 2 O 7 is almost two orders of magnitude smaller than that of Ba 2 CoGe 2 O 7 . This result suggests that the different ionic radius of the strontium and the barium anion plays a key role in determining the property of electric polarization. The origins of electric polarization and magnetoelectric effect are discussed.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    Numerical studies of electron cyclotron wave current drive on HL-2A tokamak (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-07-01
    Description: The electron cyclotron wave (ECW) current drive (CD) for the HL-2A tokamak is investigated numerically with a new ray-tracing and Fokker-Planck code. The code is benchmarked with other well-tested linear and quasilinear codes and is then used to study the electron cyclotron current drive on the HL-2A tokamak. The wave propagation, power deposition, and driven-current profiles are presented. The effect of electron trapping is also assessed. It is found that quasilinear effects are negligible at the present ECW power levels and that when both waves are injected at an angle of 20° on the plasma equatorial plane, the CD efficiency for the HL-2A saturates at ∼0.029 × 10 20  A/W/m 2 and ∼0.020 × 10 20  A/W/m 2 for the 0.5 MW/68 GHz first harmonic ordinary (O1) and 1 MW/140 GHz second harmonic extraordinary (X2) modes, respectively. The effects of the plasma density, temperature, and wave-launching position on the driven current are also investigated analytically and numerically.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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