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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1323-1326 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the behavior of paramagnetic AsGa+-related defects under 1.2 eV illumination at 4.2 K in plastically deformed bulk semi-insulating GaAs. We find them identical to the grown-in antisites with a similar photoquenchability and analogous parameters. Further, there is effective generation of additional AsGa centers after deformation. The photobehavior can be interpreted by a charge transfer model, where the metastability involved with the AsGa+ signal decay is not a defect inherent feature.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 907-909 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A potential origin for the reported discrepancies on the low-temperature photosensitivity of particle-induced anion antisites in GaAs is revealed by a systematic study of the relative fraction of photoquenchable paramagnetic As4+Ga centers as a function of neutron fluence and annealing temperature. The electron paramagnetic resonance data show that the As4+Ga centers can be split into two subsets.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4615-4617 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aiming at a better understanding of intrinsic defects in III-V compounds, we reinvestigate fast-neutron-irradiated GaP. The surprising result is the observation of a similar spectrum, formerly ascribed to Asi-related defects in GaAs. Annealing experiments suggest this spectrum involves an impurity, probably boron.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5648-5651 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variation of As+Ga content during illumination in weakly electron-irradiated semi-insulating GaAs is analyzed in terms of the pertinent parameters of the midgap donor EL2, leading to a determination of the total content of photoquenchable anion antisites independent of initial paramagnetic fraction. The associated photocarrier release is used for modeling the corresponding variation of the concentration of neutralized ST1 acceptors in a scheme involving one donor and two competing acceptor levels.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2651-2655 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The decay of the anion-antisite-related electron paramagnetic resonance quadruplet has been studied both quantitatively (resonance parameters) and qualitatively (photoquenchability, microwave saturability) as a function of annealing temperature in plastically deformed semi-insulating GaAs. The AsGa characteristics remain practically unaffected during thermal treatment, wheras the resonance parameters strongly depend on microwave power level. After comparison with similar data on particle-irradiated materiak, this behavior is explained by the kinetics of formation and dissociation of AsGaVAsVGa complexes.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1270-1274 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Uranium photoionization was observed in the afterglow of pulsed hollow cathode lamps illuminated by a dye laser tuned near the electronic transition around 591.5 nm (5L60−16 900 cm−1 7M7). The photoionization signal was used to monitor the time evolution of the ground state uranium vapor density in the cathode hole. Lifetimes over 1 ms were measured for the uranium vapor; that makes this device attractive for multistep photoionization spectroscopy. The obtained results lead to the conclusion that these long times are due to cluster formation in the afterglow. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4273-4280 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diverse experimental approaches such as microwave saturation, photoexcitation, and phototransients, in combination with powerful multiparameter data analysis, have enabled us to unravel several intertwinning spectra of paramagnetic defects in 16 MeV-electron-irradiated semi-insulating InP:Fe, aimed at simulating ion implantation damage in this III-V substrate material. Some spectra have already been reported and identified in as-grown or electron-irradiated samples, such as the cubic FeIn and trigonal FeIn-Ini,In centers or in fast-neutron-irradiated samples, such as the tetragonal FeIn-Ini,P pair. Two of the new centers discovered have symmetries closely related to those of the former trigonal and tetragonal pairs, suggesting that they derive from the same defects, but in an environment modified by the particle-induced lattice damage. In this regard, it is noteworthy that these centers indeed show anisotropy effects that can be traced to the geometrical configuration of the electron irradiation. Surprisingly, no experimental evidence was found for the PIn isolated phosphorus antisite spectrum, although the latter defect might nevertheless be part of some of the new centers. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2595-2602 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After a brief recall of our main results obtained during a recent theoretical cluster calculation on anion antisite-related defects in GaAs, we discuss the consequences of their resonance parameters. Experimentally, we perform a detailed analysis of the electron paramagnetic resonance data in plastically deformed undoped and Cr-doped semi-insulating materials in conjunction with simultaneous EL2° optical absorption measurements. Combining theoretical calculations and experimental results, we are able to identify the "As+Ga'' spectrum as a superposition of spectra ascribed to the isolated As+Ga and to its binary and ternary vacancy complexes, whereas the ternary complex AsGaVGaVAs only is believed to be the probable configuration for EL2.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1332-1335 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron paramagnetic resonance spectra of fast neutron irradiated semi-insulating GaAs, recorded at 9 GHz and 4.2 K, have been studied as a function of isochronal thermal anneals. Their decomposition into quadruplet and singlet allows one to determine the main annealing temperatures of the corresponding defects, previously identified as As4+Ga and V2−Ga, which occur respectively at 400 and 600 °C. Comparison with the behavior of implantation damage shows that electrical activation of Be+ implants is correlated with the annealing of the main defects on the cation sublattice. Finally, the linewidth variation of the quadruplet during its decay indicates a concomitant change of the local environment of the As4+Ga center.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4406-4412 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped and iron-doped InP samples have been investigated by conventional electron paramagnetic resonance measurements before and after fast neutron irradiations. Besides the expected anion antisite PIn defect, they reveal the presence of a broad spectrum that could be ascribed to an anion vacancy Vp on the basis of detailed linewidth and g-shift scalings of the resonance parameters of already identified intrinsic defects in GaP and InP. The irradiated InP:Fe sample shows both the nearest and next-nearest FeIn-Ini pairs.
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