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  • 1
    Electronic Resource
    Electronic Resource
    A diamond anvil cell for advanced microscopic observations and its application to the study of crystal growth under pressure (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3783-3788 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of diamond anvil cell has been designed for microscopic observations under pressure with high-resolution and high-magnification capability. The cell allows the use of objective lenses with working distances as small as 6 mm, resulting in a typical objective magnification of 40× (total magnification of ∼800×), and facilitating advanced microscopic techniques such as the differential interference method and the dark-field method. The aberration by diamond can be reduced significantly by optimizing its thickness, with the use of objective lenses corrected for optical windows like quartz or glass. Pressure can be changed smoothly with the use of bellows without disturbing the observation. A microscopic observation system incorporating the present cell has been employed successfully to the study of crystal growth under pressure from an aqueous solution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140491
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Ultrafast dynamics at a silicon surface detected with femtosecond transient reflecting grating spectroscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1074-1080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recently developed spectroscopic transient reflecting grating technique with a time resolution of 200 fs was applied to a silicon surface under the pump intensity of more than 1 mJ/cm2. This method provides information on excited free carrier dynamics and subsequent heat generation and diffusion selectively based on appropriate choice of probe wavelength. With regard to the thermal component, the temperature at the surface increased within several picoseconds and then decayed after about 300 ps. As the pump intensity was increased, the maximum temperature rise showed a nonlinear dependence on it, and also the temperature rise time became faster. The results led to the conclusion that the carrier dynamics causing a temperature rise at a silicon surface is dominated mainly by Auger recombination, not by the decay to a band edge under the high carrier density conditions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1420769
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  • 3
    Electronic Resource
    Electronic Resource
    Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 942-947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low resistance nonalloyed ohmic contact to n-GaAs is formed which utilizes the solid-phase epitaxy of Ge through PdGe. Discussion focuses on the conditions necessary to attain low specific contact resistivity (∼10−6 Ω cm2 on 1018 cm−3 n-GaAs) and on the interfacial morphology between the contact metallization and the GaAs substrate. MeV Rutherford backscattering spectrometry and channeling show the predominant reaction to be that of Pd with amorphous Ge to form PdGe followed by the solid-phase transport and epitaxial growth of Ge on 〈100〉 GaAs. Cross-sectional transmission electron microscopy and lattice imaging show a very limited initial Pd-GaAs reaction and a final interface which is planar and structurally abrupt to within atomic dimensions. The presence of excess Ge over that necessary for PdGe formation and the placement of Pd initially in contact with GaAs are required to result in the lowest contact resistivity. The experimental data suggest a replacement mechanism in which an n+-GaAs surface region is formed when Ge occupies excess Ga vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339705
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  • 4
    Electronic Resource
    Electronic Resource
    Cumulative laser irradiation effects on ions in the plume of YBa2Cu3O7−δ and particulates at the film surface (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2950-2952 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct observations of ions in the laser plume of YBa2Cu3O7−δ impinging onto a substrate surface revealed the increase of heavy species in the plume after multiple laser pulses on the YBa2Cu3O7−δ target. The beginning of heavy species emission from the target was observed at around 100 laser beam pulses (1 J/cm2) in our experiments. Particulate formation at the film surface was observed in the film deposited under this condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105808
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  • 5
    Electronic Resource
    Electronic Resource
    Direct observation of ions in laser plume onto the substrate (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 597-599 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct observation of ions in the laser plume of YBa2Cu3O7−δ was carried out by time-of-flight mass spectroscopy. The direct observation of the species impinging onto the substrate is very important in order to clarify the kinetics of the film formation, so ion sampling was done through the orifice set at the position of the substrate. Thus the results indicate directly the species of ions incident onto the substrate during laser deposition. The analysis of the ion energies was also carried out. Atomic, monoxide, and cluster ions were observed in the laser plume and their energies were determined to be around 200, several tens and a few eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105397
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  • 6
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    Electron transport through a single nanocrystalline silicon quantum dot between nanogap electrodes (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-11-22
    Description: We experimentally study the electron transport through a single nanocrystalline silicon quantum dot between the nanogap electrodes. We fabricate the device by depositing a nanocrystal into an ∼10-nm gap using a very high frequency plasma cell. The Coulomb diamond size depends on the number of electrons at 4.5 K, which indicates that even–odd shell filling occurs. The charging energy is estimated to be ∼11 meV, which is consistent with the size of the silicon nanocrystal. The perpendicular magnetic field dependence of the Coulomb diamonds demonstrates the Zeeman splitting as well as orbital energy evolution.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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