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  • 1
    Electronic Resource
    Electronic Resource
    Electromigration in Al/SiO2 films prepared by a partially ionized beam deposition technique (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2443-2445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that the electromigration resistance of pure Al/SiO2 thin films prepared by the partially ionized beam (PIB) deposition technique can be improved significantly as compared to those deposited by the conventional means. The PIB contained 0.8–1.2% of Al self-ions and a bias potential of 2–5 kV was applied to the substrate during deposition. The enhancement of the electromigration resistance of the Al films is believed to be associated with the strong preferred orientation (in the [111] direction) that these films have. Surprisingly the preferred orientation effect is not accompanied by an enlargement of the Al grain size. This combination of preferred orientation and small grain size may find important applications in future very large scale integrated metallization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101085
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  • 2
    Electronic Resource
    Electronic Resource
    Role of interfaces on the performance and stability of amorphous silicon-germanium alloy p-i-n solar cells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1894-1896 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance and stability of a-SiGe:H single junction p-i-n solar cells with interfacial layers at the p/i and the i/n interfaces are reported. It is found that interfacial layers have a strong influence both on the initial performance as well as on the stability of these devices. The device structure, which consists of glass, conductive transparent oxide (SnO2 ), p(a-SiC:H), a-Si:H (buffer layer), graded interface layer (1.7 eV–1.5 eV), i (2500 A(ring), 1.5 eV), inverse graded interface layer (1.5 eV–1.7 eV), and n (a-Si:H), results in the highest long-term performance. This device structure has resulted in a conversion efficiency of 10.1% with short-circuit current density of 20 mA/cm2 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102164
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  • 3
    Electronic Resource
    Electronic Resource
    An in situ transmission electron microscopy study of electron-beam-induced amorphous-to-crystalline transformation of Al2O3 films on silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5272-5273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in situ transmission electron microscopy study of the amorphous-to-crystalline transformation of Al2O3 films on a silicon substrate has been carried out. It is found that a critical electron-beam dose rate is required for the transformation to be observed. The possible effect of the silicon substrate on the growth of the Al2O3 crystallites is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353757
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  • 4
    Electronic Resource
    Electronic Resource
    Microstructural stability of epitaxial CoSi2/Si (001) interfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4853-4856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of cobalt silicide grown on (001) Si by molecular beam epitaxy have been characterized by transmission electron microscopy. Apart from (001) oriented CoSi2 grains, regions of 〈221〉 type orientations were also found. The 〈221〉 oriented domains were found to be associated with pronounced facetted depressions on the (001) Si surface. Empirical observations suggest that the formation of 〈221〉 CoSi2 domains and the formation of other types of silicide stoichiometries may be related. It is demonstrated that these microstructural instabilities may be suppressed by the codeposition of cobalt and silicon rather than simply by depositing cobalt and reacting with the Si substrate to produce (001) CoSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349026
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  • 5
    Electronic Resource
    Electronic Resource
    Structure property anisotropy in lattice-mismatched single heterostructures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2321-2327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anisotropic optical, electrical, and structural properties have been observed in thick InxGa1−xAs/GaAs single heterostructures grown by low-pressure metal-organic vapor phase epitaxy on (001) and slightly misoriented GaAs substrates. The luminescence of the (001) samples is polarized and the electron mobility is higher along one of the 〈110〉 directions. Asymmetric distributions of surface ridges and misfit dislocations have been observed in secondary electron micrographs (SEMS) of the surfaces and in transmission electron micrographs. Strong anisotropy and a clear correlation between the anisotropic optical, electrical, and structural properties have been observed for samples grown on (001) oriented substrates. For (001) samples, the results indicate that the anisotropic properties are induced by nonuniform strain relaxation. For samples grown on misoriented substrates, SEM and micro-Raman spectroscopy indicate a better crystal quality. The anisotropic properties are found to be reversed and the degree of anisotropy is significantly reduced. The results suggest the improvement of interfacial coherency owing to the mechanism of nucleation on a substrate presenting a series of steps and ledges. The reduction of defects within the epilayer can be partly due to a faster strain relief in vicinal (001) epilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351105
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  • 6
    Electronic Resource
    Electronic Resource
    Sample cell to measure the electromigration of tritium in metals (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1279-1283 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The features of a cell with which the electromigration of tritium in metals can be conveniently measured are described. The concentration profile due to the electromigration is monitored by a resistometric technique. The main requirements incorporated in the design of the cell are good thermal homogeneity and stability around the specimens, possibility of housing many samples in one run so as to generate more data during the long waiting times, and the safe containment of the radioactive tritiated samples. The cell has been used up to 300 °C. Results on the electromigration of tritium in niobium are presented to demonstrate the cell performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139453
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  • 7
    Electronic Resource
    Electronic Resource
    Simple device for drilling holes in metal gaskets for diamond anvil cell experiments (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3030-3031 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: With a spring-loaded platform mounted on a precision minidrilling machine, it is possible to rapidly and inexpensively drill sharp sample holes down to about 100 μm in hardened metal gaskets for diamond anvil cell experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144356
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  • 8
    Electronic Resource
    Electronic Resource
    Performance of a diamond-anvil high-pressure x-ray diffractometer in the Guinier geometry (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2599-2603 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this paper, the performance of a novel high-pressure diamond-anvil powder x-ray diffractometer in Guinier geometry is reported. The diffractometer is a combination of a curved quartz-crystal monochromator, a Mao–Bell-type diamond-anvil cell, a flat position sensitive detector, and a Huber goniometer with compound stages to realize this geometry. The incident x-ray beam is from a rotating anode x-ray generator. It is shown that the above experimental arrangement results in an enhanced S/N ratio, improvement in resolution, and reduction of the data-acquisition time. Test results on UAl2 are presented to demonstrate the advantages of the setup in the study of phase transitions at high pressure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145595
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  • 9
    Electronic Resource
    Electronic Resource
    Dislocation structure in InxGa1−xAs/GaAs strained-layer superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1713-1716 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dislocation structure in InGaAs/GaAs strained-layer superlattices has been characterized by transmission electron microscopy. It is shown that most of the dislocations are confined to the buffer/strained-layer superlattice interface. We have also found that the strained-layer interface can be an effective barrier to dislocation propagation. Extended dislocations, which are potentially electrically active defects, are shown to exist in the strained-layer superlattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339598
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  • 10
    Electronic Resource
    Electronic Resource
    Stability of multijunction a-Si:H-based solar cells (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4161-4166 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that multijunction a-Si:H-based solar cells are more stable than their single-junction counterparts and that the stability improves as the number of junctions increases. It is further shown that the rate of degradation of multijunction devices can be explained in terms of the rates of degradation of their individual i layers. It is thus possible to predict the amount of photodegradation of multijunction devices after prolonged light soaking, knowing only the rates of degradation of single-junction cells in terms of the i-layer thicknesses and the intensity of the illumination to which they are exposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344979
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