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  • American Institute of Physics (AIP)  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Influence of hydroxyls on the adhesion of Au films to GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 173-175 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adhesion of Au metallization to GaAs substrates was studied as a function of the time to which freshly cleaved GaAs surfaces were exposed to de-ionized water or pure dry oxygen. It was found that the adhesion strength of Au metallization deposited on these surfaces is weakened from exposure to de-ionized water and the degradation is directly related to the length of the exposure. Exposure of the substrate surfaces to pure dry oxygen had no effect on the adhesion. The substrate surfaces were characterized as a function of exposure to these two environments and it was found that the Ga and As combine with the hydroxyl groups in the de-ionized water to form hydroxides and the As hydroxide dissolves leaving the surface As deficient. The extent of this reaction is dependent on the length of time the surface is exposed to the hydroxyl groups. Exposure of the substrate surface to pure dry oxygen results in a thin stable oxide layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101220
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  • 2
    Electronic Resource
    Electronic Resource
    Near-surface defects associated with 2.0-MeV 16O+ ion implantation in n-GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 739-743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the technique of deep-level transient spectroscopy (DLTS), we have studied the formation of the defects in the near-surface region of n-GaAs implanted with different doses of 2.0-MeV 16O+ ions. Our results show that EL6 and the U band are the principal defect centers in room-temperature-implanted samples. In the case of samples implanted at 200 °C, DLTS results also show the presence of hole levels in addition to the EL6 and the U band. When the samples were subjected to rapid thermal annealing after room-temperature ion implantation, hole traps were the major defect centers in the near-surface region. Just below the surface region, however, limited recovery has occurred as shown by the re-emergence of electron traps. However, the defect structure is still different from that of the unimplanted samples. These results can be used to show the extent of lattice recovery after rapid thermal annealing. A mechanism is proposed to explain the evolution of the defects in MeV ion implanted n-GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350360
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  • 3
    Electronic Resource
    Electronic Resource
    Microcomputer-controlled chemiluminescence spectrometer for solid phase samples (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 191-196 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An effective, low-cost microcomputer-controlled chemiluminescence detection system was developed for use in correlating the stability and aging of materials to the chemiluminescence emitted from the surface of these materials. The system is completely automated to record data as a function of time and sample temperature. In addition, spectra over the visible light region can be obtained under microcomputer control. A description of the hardware, computer interface, and programs as well as the use of the system are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138967
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  • 4
    Electronic Resource
    Electronic Resource
    Density measurements of a pulsed supersonic gas jet using nuclear scattering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1744-1747 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method using nuclear scattering with an ion beam microprobe for characterizing the spatial and temporal density profile of a supersonic gas jet is described. The technique was applied to Ar and N2 gas jets from an axially symmetric DeLaval nozzle and the results are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144003
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical and metallurgical characteristics of PtxSi1−x/n-GaAs contacts (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1225-1227 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Forward current–voltage characteristics of carrier transport at PtxSi1−x/n-GaAs interfaces have been measured in the as-deposited state and after annealing at 500 °C for 4 h. The single phase alloy Pt0.5Si0.5 shows Schottky diode characteristics with the barrier height (φb) 0.70 eV and the ideality factor (η) 1.17. Rutherford backscattering of He4 ions and Auger depth profiles for Pt, Si, Ga, and As reveal that the Pt0.5Si0.5/n-GaAs interface remains metallurgically inert even after the heat treatment. The observed metallurgical nonreactivity is reflected in the diode characteristics of the annealed samples which show negligible changes in φb and η. The silicon rich PtxSi1−x (x〈0.5) alloy compositions show near-Ohmic transport in the as-deposited and annealed states. These films are also metallurgically inert on annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338176
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