ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Apparatus for vortex dynamics studies in high Tc samples using close cycle refrigerator and rf oscillators (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1494-1500 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design, fabrication, and performance of an apparatus for measurements of rf penetration depth in superconducting samples are described. The instrument makes use of a close-cycle helium refrigerator and is capable of measuring vortex dynamics in superconducting sample of volume as small as 1×10−3 cm3 with a signal-to-noise ratio of 1400. The system has been tested for a tunnel diode oscillator and an IC 74LS04 oscillator in the 3–5 MHz frequency range. Both magnetic field magnitude and angular variations to the resolution of 1 G and 0.05°, respectively, are possible with the apparatus. The system performance is evaluated by measuring the dynamical behavior of vortices in platelet samples of Bi2Sr2CaCu2O8 and (Bi-Pb)2Sr2Ca2Cu3O10 superconductors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149612
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Modification of Y2Ba4Cu8O16 thin-film surfaces by interaction with a radio frequency excited oxygen plasma (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2354-2356 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of rf excited oxygen plasma for oxidizing and possible etching of SrTiO3 (100) supported Y2Ba4Cu8O16 thin films is studied by photoemission. Oxygen plasma modifies the surface and eliminates photoemission features identified with surface impurities like BaCO3. The resulting surface is barium deficient but shows a Fermi level suggesting it is metallic. Application of a −200 V dc bias to the sample to increase the kinetic energy of the incident oxygen ions enhances either surface sputtering or atomic mixing and produces a surface which resembles YBa2Cu3O7, because the photoemission spectra are similar to those published for cleaved crystal surfaces or films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102365
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Chemical structure of nitrogen in amorphous silicon matrix (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 978-980 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct evidence of substitutional doping of nitrogen in ion beam deposited hydrogenated amorphous silicon, from analysis of infrared spectra and Si-2p core level shape measured with x-ray photoelectron spectroscopy (XPS), is presented. For the first time the XPS technique has been used to deduce the upper limit for substitutional solid solubility of the impurity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98782
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Preferred orientation effects in coevaporated films of DyBa2Cu3O7−x superconductors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4896-4899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal coevaporation has been used to deposit thin films of Dy-Ba-Cu-O compounds on magnesium oxide substrates. The as-deposited films crystallize into a randomly oriented polycrystalline phase on annealing at 900 °C. Further annealing at higher temperatures results in a c-axis-oriented material. Effects of the structural changes on the superconducting behavior of the films have been evaluated with resistivity and magnetization measurements. The c-axis-oriented films show sharper resistive transition and improved diamagnetic shielding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343809
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Magnetic ordering and granularity effects in La1−xBaxMnO3 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2490-2496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report detailed measurements of the magnetic behavior of La1−xBaxMnO3 bulk samples over a wide range of composition (0≤x≤1), temperature (4.2–775 K), and magnetic field strength (1 G–50 kG). The end members of this series namely LaMnO3+δ (with δ≥0) and BaMnO3 crystallize into pseudocubic perovskite and hexagonal lattices, respectively. The perovskite structure is stable for x≤0.35 while a phase separation into La0.65Ba0.35MnO3 and BaMnO3 occurs for x〉0.35. The ordered moment on LaMnO3+δ depends sensitively on the processing conditions and the lowest value of 0.006 μB per Mn ion at 4.2 K is realized in the antiferromagnetic compound of δ=0. The complex magnetic behavior of BaMnO3 suggests antiferromagnetic ordering below ∼150 K. The Ba-substituted compounds order ferromagnetically with a monotonic increase of TC and saturation magnetization Ms with x〈0.35. In the two-phase region, Ms scales with the fraction of the ferromagnetic phase present in the sample. Magnetic granularity, superparamagnetism, and an effective medium approach for susceptibility of the two-phase mixture are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372208
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Raman, infrared and x-ray diffraction study of phase stability in La1−xBaxMnO3 doped manganites (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3124-3131 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of different crystallographic phases and their characteristic Raman and infrared spectra are studied in the manganite system La1−xBaxMnO3 for x in the range of 0≤x≤1, and with variations in oxygen stoichiometry. Synthesis of the end member LaMnO3 in pure argon environment leads to the formation of Jahn–Teller distorted, antiferromagnetic orthomanganite. While the observed Raman modes in this compound are primarily due to internal vibrations of MnO6 octahedra, the infrared (IR) spectra show an absorption edge in addition to the IR active phonons. The oxygen rich LaMnO3 is rhombohedral and has fewer zero-wave-vector phonon modes. In the barium substituted compositions with 0〈x≤0.25, a single phase rhombohedral compound of decreasing rhombicity is formed. A further increase in x leads to the ideal cubic perovskite structure for which a factor group analysis yields no Raman active and three IR active phonons of F1u symmetry. The compound with x=0.35, shows faint Raman modes of hexagonal BaMnO3 (P63mc noncentrosymmetric group) whose presence is not seen in x-ray diffraction data. For x〉0.35, all three techniques used here show the formation of a two-phase mixture of La0.65Ba0.35MnO3 and hexagonal BaMnO3. An attempt has been made to correlate the progressive increase in symmetry of the crystal structure, shift of IR absorption edge to lower energies, and disappearance of phonon modes with x and δ with the reported electrical and magnetic behavior of this hole-doped manganite. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369651
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Preparation of platinum silicides by reactive sputtering of Pt in SiH4 plasma (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5477-5482 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Platinum-silicon alloys have been prepared over a wide composition range by reactive magnetron sputtering of platinum in a SiH4 plasma. Studies on the stoichiometry of the films show that it depends sensitively on the silane partial pressure and the cathode potential. An analysis of the intensities of the emission lines of platinum and hydrogen present in the plasma indicates that at lower silicon concentrations the stoichiometry of the film bears a one-to-one correspondence with the stoichiometry of the plasma. X-ray diffraction studies on the films deposited at room temperature show metastable products such as extended solid solutions on either side of the equilibrium phase field and the formation of a bcc phase (a=4.169 A(ring)) for the Pt67Si33 alloy. Stoichiometric intermetallic phases Pt2Si, PtSi, and PtSi2 have been synthesized by depositing the films at 100, 300, and 500 °C, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334824
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electrical and metallurgical characteristics of PtxSi1−x/n-GaAs contacts (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1225-1227 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Forward current–voltage characteristics of carrier transport at PtxSi1−x/n-GaAs interfaces have been measured in the as-deposited state and after annealing at 500 °C for 4 h. The single phase alloy Pt0.5Si0.5 shows Schottky diode characteristics with the barrier height (φb) 0.70 eV and the ideality factor (η) 1.17. Rutherford backscattering of He4 ions and Auger depth profiles for Pt, Si, Ga, and As reveal that the Pt0.5Si0.5/n-GaAs interface remains metallurgically inert even after the heat treatment. The observed metallurgical nonreactivity is reflected in the diode characteristics of the annealed samples which show negligible changes in φb and η. The silicon rich PtxSi1−x (x〈0.5) alloy compositions show near-Ohmic transport in the as-deposited and annealed states. These films are also metallurgically inert on annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338176
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Irreversibility field and superconducting screening currents in EuBa2Cu3O7 films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 619-621 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the critical current density (Jc) and irreversibility field [Birr(T)] of epitaxial, c-axis-oriented EuBa2Cu3O7 (Eu-123) films are reported. The transition temperature (Tc), Jc, and Birr(T) of these pulsed-laser-deposited films depend critically on the growth temperature (TD), growth rate (Gr), and the oxygen partial pressure (pO2) during growth. As compared to YBa2Cu3O7, Eu-based films require lower Gr, higher pO2, and higher TD. These differences are attributed to the lower adatom mobility of Eu and its propensity for a 2+ oxidation state. The lattice mismatch between (100) LaAlO3 and the ab-plane of Eu-123 leads to an elongated c axis and some randomly oriented islands whose growth is truncated by epitaxial lateral overgrowth as the film thickness increases. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436525
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Kinetics of structural relaxation and hydrogen evolution from plasma deposited silicon nitride (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 284-286 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption measurements and the temperature dependence of stress have been used to establish the kinetics of structural relaxation and hydrogen evolution from plasma deposited a-SixNy :H films. The Arrhenius rate law describes the dissociation of N–H and Si–H bonds which occurs on annealing the films above 600 °C. The activation energies deduced from the infrared data are lower than the respective bond dissociation energies. The films undergo a rapid stress relaxation in the temperature range 400–650 °C. The discussion of the experimental results highlights possible mechanisms for the evolution of hydrogen from a-SixNy@B:H networks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99495
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...