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  • 1
    Electronic Resource
    Electronic Resource
    Metastable ferromagnetic phase formation in 35–50 at. % Mn—Ga thin films : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6683-6685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Mn—Ga films with the composition of 35–50 at. % Mn were fabricated by means of a conventional vacuum evaporation method on glass and NaCl substrates heated at 473 K. The metastable ferromagnetic phase was formed in the samples as well as the Mn2Ga5 phases. The analysis of the x-ray and microbeam electron diffraction patterns suggested that the crystal structure of this phase was correlated with a long-range ordered structure composed of a certain number of the Mn2Ga5 cell. It was demonstrated that the presence of the metastable phase affected the magnetic properties; the metastable single-phase films had a high coercivity up to about 320 kA/m and a fairly large saturation magnetization of about 550 mT, which were comparable to those for the MnGa-σ-phase and AlMn-τ-phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352501
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of crystallization on structural and dielectric properties of thin amorphous films of (1−x)BaTiO3-xSrTiO3 (x=0–0.5, 1.0) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5141-5146 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibilities for fabricating solid solutions of (Ba1−x,Srx)TiO3 (x≤0.5,1.0) by crystallization of amorphous films and for improving their dielectric properties by adjusting the Sr content were investigated. Thin amorphous films were prepared from powder targets consisting of mixtures of BaTiO3 and SrTiO3 by sputtering with a neutralized Ar-ion beam. The amorphous films crystallized into (Ba1−x, Srx)TiO3 solid solutions with a cubic perovskite-type structure after annealing in air at 923 K for more than 1 h. The Debye-type dielectric relaxation was observed for the amorphous films, whereas the crystallized films showed paraelectric behavior. The relative dielectric constants were of the order of 20 for the amorphous samples, but increased greatly after crystallization to about 60–200, depending on the composition; a larger increase in the dielectric constant was observed in the higher Sr content films, in the range x≤0.5, which could be correlated with an increase in the grain size of the crystallites. The crystallization processes responsible for the difference in the grain size are discussed based on the microstructural observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353788
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  • 3
    Electronic Resource
    Electronic Resource
    Dielectric relaxation in amorphous thin films of SrTiO3 at elevated temperatures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1914-1919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature and frequency dispersion of dielectric permittivity was investigated on thin amorphous films of SrTiO3 prepared by a sputtering method using neutralized argon-ion beams. The amorphous SrTiO3 films deposited on glass substrates exhibited a marked dielectric relaxation at temperatures 500–800 K in a frequency range 0.1–50 kHz. This behavior was explained based on a dipolar relaxation of the Cole–Cole type with the static dielectric constant ε's(approximately-equal-to)380, the constant at high frequency ε'∞(approximately-equal-to)35, and the distribution parameter of the relaxation time β(approximately-equal-to)0.8. The analysis of the temperature dependence of relaxation time gave the activation energy for the relaxation of about 1.08 eV and the characteristic relaxation time of the order of 10−12 s. In the temperature range where strong relaxation occurred, a semiconductor-type conduction having the activation energy of about 0.84 eV became dominant. A correlation between the mechanisms of the dielectric relaxation and the thermally activated motions of ionized defects in the amorphous structure is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360228
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  • 4
    Electronic Resource
    Electronic Resource
    Solid phase reactions and change in stress of TiN/Ti/Si for a diffusion barrier (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2899-2903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase reactions and change in stress of TiN/Ti/Si which is expected to have a low contact resistance to both n+ and p+ silicon and good adhesion to the Si substrate has been investigated. The TiN layer is a uniform polycrystal on the Si substrate; however, its texture is caused by the textured Ti layer. By annealing at 600 °C, Si and N atoms diffuse into the Ti layer which causes a distortion of the Ti lattice and an increase in the sheet resistance. By annealing at a higher temperature, as Ti starts to react with Si, the sheet resistance decreases. The silicidation sequences are the same as the previous results and the kinetics slightly differ. The change in film stress is well explained by these solid phase reactions. A TiN layer has excellent thermal stability in an Al/TiN/Ti/Si system, because TiN does not react with Al, Ti, and Si up to 600 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345430
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  • 5
    Electronic Resource
    Electronic Resource
    Intensity of x-ray microbeam formed by a hollow glass pipe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 828-829 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: X-ray microbeams have been produced by utilizing hollow glass pipes. It has been observed that the intensities of ten x-ray lines (from 6.93 to 19.6 keV) transmitted through 250-mm-long hollow glass pipes of inside diameters of 27.4, 23.0, and 18.8 μm range from 1.9 to 2500 times greater than intensities reduced by inverse-square attenuation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142041
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  • 6
    Electronic Resource
    Electronic Resource
    Disktron accelerator (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2466-2474 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of low-energy ion accelerator has been developed. It includes an eight-storied Disktron generator, newly developed accelerating tubes which hold up to 4 MV/m, both single and tandem acceleration capability, and a compound negative ion source. The Disktron generates 3.2 MV with a dummy load and 2.2 MV with ion beams, and has a voltage stability better than 10−3 at around 1 MV with a corona feedback stabilizer or a generating voltmeter feedback stabilizer only. The highly stabilized voltage of the Disktron has particularly been allowed to form an ion microbeam of about 1-μm diameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143905
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  • 7
    Electronic Resource
    Electronic Resource
    Theoretical consideration of intensity of an x-ray microbeam formed by a hollow glass pipe (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 135-142 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Intensities of x-ray microbeams formed by the 250-mm-long hollow glass pipes of inner diameters of 27.4, 23.0, and 18.8 μm have been theoretically investigated, by taking account of the slope distribution of microprojections (surface roughness) on the pipe inner wall, using the Monte Carlo method. The intensities for all the pipes calculated on the supposition that each pipe inner wall is perfect (i.e., zero rms of the slope distribution) have been much greater than the experimental values in the x-ray energy region from 6.93 to 19.6 keV. Assuming the slope rms from 2.5×10−4 rad to 3.3×10−3 rad, the calculated results have agreed with the experimental values. Discussions on the results for all the pipes are given in relation to the x-ray anomalous dispersion, the penetration of x rays, the intensity distribution on the x-ray sources used, undulation of the pipes, and the presence of microdust in the pipes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144427
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  • 8
    Electronic Resource
    Electronic Resource
    Spin-dependent intergranular transport in magnetite films deposited by ferrite plating (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7130-7132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present article describes that Fe3−xO4 films prepared by the ferrite plating exhibited negative magnetoresistance associated with spin-dependent intergranular transport. The Fe3−xO4 plated films were composed of Fe3O4 and γ-Fe2O3; the relationship between the degree of oxidation, magnetic and electrical properties by changing the concentration of NaNO2 in the oxidizing solution CNaNO2 was discussed. Current-in-plane (CIP) electrical properties were investigated with a four-probe method at room temperature. Resistivity was about 2–200 Ω cm, which is higher than that of bulk magnetite (10−2 Ω cm). Negative magnetoresistance with peaks at the coercive field was observed and the MR ratios taken in the maximum field of 2.5 kOe increased up to 5.5% with increasing CNaNO2. Mössbauer spectroscopy and the electrical evaluation showed that an increase in the Fe3+ ion content, in other words, an increase in insulating region raised the resistivity of the films with increasing CNaNO2. The dependence of the MR ratio on CNaNO2 suggested that such insulating region existed in the grain boundaries and the MR effect was caused by the spin-dependent intergranular transport of electrons through the insulating regions. The results suggest that appropriate control of the gain boundaries through changing the oxidizing conditions enables us to improve the MR effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372953
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  • 9
    Electronic Resource
    Electronic Resource
    Superconductivity of Bi2Sr2Can−1CunOy (n=2, 3, 4, and 5) thin films prepared in situ by molecular-beam epitaxy technique (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4371-4377 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preparation techniques and properties of Bi-Sr-Ca-Cu-O thin films are reported. The optimization of the substrate temperature in ozone atmosphere and the shuttering of molecular beams on an atomic scale enabled us to prepare thin films of Bi2Sr2Can−1CunOy (n=1, 2, 3, 4, and 5). These films showed superconducting transition with the exception of the n=1 phase and resistivities showed strong temperature dependence without heat treatment after deposition. Reflection high-energy electron diffraction showed sharp streaks, which suggest the growth of films with flat surface on an atomic scale.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350342
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  • 10
    Electronic Resource
    Electronic Resource
    Wide temperature scaling law of the secondary peak observed in magnetization curves of single crystals (La,Sr)2CuO4 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1830-1832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization curves of single crystals (La1−xSrx)2CuO4 with various Sr contents were measured. A distinct increase of magnetization with increasing applied field was observed in Sr overdoped compositions, when the magnetic field was applied perpendicular to the CuO2 plane. The field, Bpk , where magnetization showed a maximum value, was strongly dependent on temperature. Its dependence was expressed by a universal relation (square root of)Bpk = c(x)[1−T/Tc(x)] over a wide temperature range; between 4.2 K and Tc. Possible mechanisms which give rise to the observed distinct secondary peak effect are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109563
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