ALBERT

Notes: The vibrational quenching rate constants for NO+(v), predominantly in the v=1 state, have been measured at 200 and 293 K in collisions with H2 and D2 and at 200, 293, and 458 K with O2. The rate constants are all very low, corresponding to quenching probabilities ∼10−4. The low rate constants reflect very shallow attractive potential wells. In the case of H2 and D2 this is a consequence of their low polarizabilities. In the case of O2, repulsive chemical interactions offset the electrostatic attraction to yield a shallow attractive well. This is a consequence of the singlet NO+ and triplet ground state O2 not approaching on the attractive NO+3 ground state potential surface, which is a singlet. The temperature dependences of the quenching rate constants are generally slight, indicating that the collision energies are in a range comparable to the attractive well depth and that the quenching is not strongly dominated by either the attractive forces, which would give a negative energy dependence, or by the repulsive forces which would give a positive energy dependence.

Notes: The rotational relaxation of the solvent Aroclor 1248 (A1248) has been examined in solutions containing either polystyrene (PS), 0≤c≤0.269 g/cc, or polybutadiene (PB), 0≤c≤0.264 g/cc, by oscillatory electric birefringence. Measurements were performed at eight temperatures from −17.31 to 25.00 °C. In all cases the normalized solvent relaxation time τ/τ0, where τ0 was the value in neat solvent, was an exponential function of concentration. For PS/A1248, ∂ ln(τ/τ0)/∂c was independent of temperature and equal to 13±1 cc/g, whereas for PB/A1248, ∂ ln(τ/τ0)/∂c increased steadily with temperature and was negative for measurement temperatures of 2.81 °C and below. These observations were qualitatively consistent with a picture of solvent clustering or ordering, which was enhanced by the addition of PS but disrupted by PB. Although some features of the data were also consistent with changes in solution free volume, as indicated by measurements of the composition-dependent glass transition temperature, such considerations were not sufficient to reconcile all the observed behavior. The ratio τ/τ0 was interpreted as representing an effective, average solvent friction function ζˆ(c,T), which could also be used to define an effective solvent viscosity, ηe(c,T)=ηs(T)⋅ζˆ(c,T). It was shown that ∂ ln ζˆ/∂c, also equivalent to an intrinsic effective viscosity [ηe], was very close in magnitude and sign to the intrinsic high frequency limiting viscosity [η'∞] for both PS/A1248 and PB/A1248. This implies that the measured values ofη∞ reflect predominantly polymer-induced changes in solvent friction. Therefore, it may not be necessary to invoke additional sources of energy dissipation, such as chain stiffness or internal viscosity, to describe the high frequency viscoelastic or oscillatory flow birefringence properties of flexible chains. Furthermore, to the extent that η'∞ reflects changes in solvent friction for any polymer/solvent system, measured values of the intrinsic viscosity [η] require reinterpretation, particularly for lower molecular weight polymers. It was also demonstrated that ζˆ(c,T), as inferred from measurements of solvent or probe diffusion in the same systems [von Meerwall, Amelar, Smeltzly, and Lodge, Macromolecules (in press)], was quite different from that reported here, indicating inter alia that the correct method for accounting for changes in local friction in polymer solutions has yet to be established.

Notes: Waveguides of high refractive index aluminum garnets have been epitaxially grown on 〈111〉-oriented crystal wafers of yttrium aluminum garnet (Y3Al5O12, YAG) and clad with epitaxial YAG. Epitaxy was by the liquid phase solution growth technique from supercooled mixtures of lead oxide and boron oxide, as is common for the epitaxy of iron garnets. One composition which is particularly suited for waveguides is Tb1.78Lu1.22Al5O12, which has a refractive index at 632.8 nm of about 1.854, as compared with 1.828 for YAG, and has no absorption bands in the visible and near IR spectra. Since aluminum garnets have melting points above 1900 °C, such waveguides should find application in high temperature optical sensors.

Notes: The fabrication and electrical performance of an all refractory, eight mask step, NbN medium scale integrated circuit process are discussed. In situ rf sputter deposited trilayers of NbN/MgO/NbN are plasma etched to fabricate Josephson junctions. A novel low temperature, plasma enhanced chemical vapor deposited SiO2 film is used for wiring and resistor insulation. Sputter deposited molybdenum films are used for resistors. Tunnel junctions fabricated with this process have Vm=61 mV at jc=1100 A/cm2, and Vg = 5.1–5.2 mV at 4.2 K. Critical currents are uniform to within ±3% for 101 junction strings and are within ±25% over all die on 3 in. wafers. This process has been used to fabricate 8-bit single flux quantum counter circuits, squid magnetometer circuits, 870 junction strings, and arrays of 256 squids. Preliminary circuit testing indicates operation at temperatures within the range of small closed-cycle refrigerators.

Notes: The damping rate of the poloidal flow uθ in a tokamak is determined in the banana regime as an initial value problem. The bounce averaged drift kinetic equation is solved analytically for early times and numerically for longer time scales of the order of the ion–ion collision time τii. Initial conditions are chosen for the ion distribution function fi(t=0) describing states with similar flows uθ(t=0), but varying structures in pitch angle velocity space. At early times an analytical treatment shows that the damping characteristics of uθ(t) depend sensitively on whether or not the ions resposible for the flow are close to the trapped–passing boundary. Initial decay is shown to be of the form duθ/dt∼(νiiε/t)1/2. A numerical treatment then confirms this early time result and extends the solution to the long term asymptotic decay, which is found to be independent of the initial preparation of the system. This long term evolution is also found to tend to independence of inverse aspect ratio ε as t→0. © 1996 American Institute of Physics.

Notes: A quasilinear method is developed for determining saturated tearing mode magnetic island widths in axisymmetric toroidal plasmas with arbitrary cross-sectional shape, aspect ratio, or plasma pressure (beta). The method is applied to compute magnetic island widths in force-free toroidal plasmas with aspect ratio as low as 2.0 and elongation between 1.0 and 2.0. It is found that current suppression within the magnetic island strongly increases the saturated width while current peaking reduces width. The effects of current profile, geometry, and harmonic mixing are also studied.

Notes: A two-dimensional Thomson scattering system is being designed for the Advanced Toroidal Facility (ATF) torsatron experiment. This system will provide electron temperature and density measurements at 15 points along a vertical chord with each shot from a two-dimensional Te and ne map of an ATF toroidal cross section can be obtained. The horizontal Thomson scattering viewing port is offset by 15° toriodally from the ports passing the vertical laser beam. Translating and rotating mirors will be used to relay light from the viewing port to the collection lens. This makes it possible to scan horizontally, view as much of the vertical laser beam as possible, and to use a fixed focal length, fixed position lens. Three sets of spectrometers optimized to three temperature ranges will be used. At the output of each spectrometer, dispersed light will be detected by an array of five, seven, or eight photomultiplier tubes, depending on the temperature range of the spectrometer.

Notes: A two-dimensional scanning neutral particle analyzer has been installed on the Advanced Toroidal Facility (ATF). This TFTR-type E(parallel)B spectrometer provides an extended energy range, mass resolution, and flexibility in viewing orientation. Characteristics of the E(parallel)B analyzer and the associated data acquisition and control systems are discussed. Data representative of those taken during neutral beam injection and ion cyclotron heating on ATF are presented to illustrate the analyzer capabilities.

Notes: Shock-induced luminescence from lithium niobate has been studied in the stress range 1.6–21.0 GPa. Both fast-framing photography and five-channel optical pyrometry were used to observe the luminescence. The framing photography showed that the emission pattern is heterogeneous for stresses just above the dynamic yield point. A further increase of the stress resulted in a pattern which was essentially homogeneous to within the experimental spatial resolution of about 30 μm. Narrowband filters and photomultiplier tubes were used in the optical pyrometry experiments. A broadband spectrum with a peak near 700 nm was observed. A plot of the energy dissipated by the shock versus shock stress correlates very well with a plot of the 700-nm intensity versus shock stress. The mechanism for light emission in lithium niobate appears to be closely related to the dynamic yielding process.

Notes: Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V−1 s−1 for a sheet density of 6.2×1011 cm−2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal–oxide–semiconductor device fabrication. © 1999 American Institute of Physics.