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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3479-3481 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we provide the report on the preparation of a bulk n-type NdCeCuO superconductor using a high-pressure high-temperature sintering procedure. The superconductor was obtained by sintering as-prepared material at 4.0 GPa at 530 °C for 20 min and required no additional reducing treating. The sample shows a higher onset temperature Tcon (32 K), a higher zero resistance temperature Tc0 (22 K), and a much lower resistivity than a standard bulk sample. Indeed the room-temperature resistivity and the quasimetallic resistivity in the normal state for our polycrystalline sample are similar to those of single crystals. This high-pressure sintering procedure reduces weak link effects and opens the possibility of preparing high-quality bulk n-type superconductors.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3037-3039 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an unconventional reduction method, high-pressure sintering at 6.0 GPa and about 600 °C for 20 min, we have produced high-quality n-type Ln1.85Ce0.15CuO4−y (Ln=Pr, Sm, and Eu) superconductors from the as-prepared materials. The samples show higher critical temperatures, higher superconducting phase fractions, and much lower resistances in the normal state than those synthesized by conventional methods. The increase of critical temperature in Eu1.85Ce0.15CuO4−y is most obvious with an onset temperature Tonc and zero-resistance temperature Tc0 of 28.4 and 23.3 K, respectively. High-pressure sintering seems to be effective on the modulation of the fine crystal and electronic structures of n-type systems. In particular, metallic resistance versus temperature behaviors in normal states similar to those found in single crystals and epitaxial films are observed in Sm1.85Ce0.15CuO4−y and Eu1.85Ce0.15CuO4−y, in sharp contrast to the semiconductorlike behaviors in the conventionally prepared samples. From transmission electron microscopy studies, it is found that the compacting and regrowth of the polycrystal under high-pressure sintering greatly improves the weak links at grain boundaries.
    Type of Medium: Electronic Resource
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  • 3
    Publication Date: 2015-05-05
    Description: SnO 2 quantum dots (QDs) are potential materials for deep ultraviolet (DUV) light emitting devices. In this study, we report the temperature and excitation power-dependent exciton luminescence from SnO 2 QDs. The exciton emission exhibits anomalous blue shift, accompanied with band width reduction with increasing temperature and excitation power above 300 K. The anomalous temperature dependences of the peak energy and band width are well interpreted by the strongly localized carrier thermal hopping process and Gaussian shape of band tails states, respectively. The localized wells and band tails at conduction minimum are considered to be induced by the surface oxygen defects and local potential fluctuation in SnO 2 QDs.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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