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  • 1
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    Phase Evolution in Solidification Process of Germanium at High Pressure (1998)
    Wiley
    Details
    Publication Date: 1998-01-01
    Print ISSN: 0232-1300
    Electronic ISSN: 1521-4079
    Topics: Geosciences , Physics
    Published by Wiley
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    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Phase selection in interfacial reaction of Ni/amorphous Si multilayers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4313-4318 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reaction in Ni and amorphous Si (a-Si) multilayers (Ni/a-Si) has been studied. Transmission electron microscope observation was used to monitor the progress of the solid-state reaction. It was found that amorphous Ni-silicide phase [a-(Ni,Si)] is the first phase formed in the Ni and a-Si interfacial reaction. A relatively large composition range for the amorphous phase exists in these Ni/a-Si multilayers. In the as-deposited Ni/a-Si multilayers with shorter modulation period, the uniform a-(Ni,Si) phase forms at least in the composition range of 25–62 at. % Ni. These results are consistent with predictions from the calculated Gibbs free-energy diagram. The δ-Ni2Si phase is the preferred phase in the crystallization process of a-(Ni,Si) even for the equiatomic Ni/a-Si multilayers. The mechanism that controls phase selection in the Ni/a-Si interfacial reaction is discussed using nucleation theory. A nucleation control model for phase selection is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352814
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  • 3
    Electronic Resource
    Electronic Resource
    Interactions between the interface of titanium and fullerene (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 149-152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction, photoemission, and Auger electron spectroscopy studies are reported of the interactions between the interface of titanium and C60 solid film during low-temperature annealing. The structure of C60 at the Ti/C60 interface is disrupted by the Ti atoms when Ti is deposited onto the surface of C60 film. Titanium atoms react with carbon atoms to form amorphous Ti carbide during low-temperature annealing. This interaction is related to the solid state amorphization reaction of the deposited Ti layer with C60 film, which occurs with a driving force of a negative heat of formation in the Ti–C system and a dominant diffusion of carbon into the Ti overlayer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360922
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  • 4
    Electronic Resource
    Electronic Resource
    Nucleation of Al-Cu-Fe alloy in a drop tube (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7559-7561 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The undercooling and nucleation of an Al65Cu20Fe15 alloy have been investigated with a 1.2-m-long drop tube. Melted droplets solidified either in vacuum or in helium. Various size samples in the forms of a globule, a fine fiber, and an irregular splat were collected at the bottom of the tube. X-ray phase identification results indicated that the CsCl-type cubic phase with a lattice parameter of 2.94 A(ring) and Al-Cu-Fe icosahedral quasicrystalline phase coexist in most specimens. However, the amount of each phase differs in various size samples due to the different cooling rates and undercoolings. It can be concluded that deep undercooling is beneficial to the formation of the Al-Cu-Fe icosahedral phase. In addition, in some rapidly solidified fine fibers (〈105 K/S), the Al-Cu-Fe ternary amorphous phase was also observed by high resolution transmission electron microscopy. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357989
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  • 5
    Electronic Resource
    Electronic Resource
    The role of high-pressure sintering in preparing high-quality n-type Nd2−xCexCuO4−y superconductors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 843-849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-pressure high-temperature sintering (HHS) under 1.0, 2.0, 4.0, and 6.0 GPa for a short time was directly used to reduce n-type Nd1.85Ce0.15CuO4−y. Superconductors with higher critical temperature were obtained. The samples display lower resistivity, and more metalliclike resistance behavior at normal state with increasing sintering pressure. A small increase of lattice parameter and cell volume was observed via electron and x-ray diffraction. Transmission electron microscopy studies also show that there is a preferential orientation along the c axis among the neighboring grains. This helps get well-matching grain boundaries in the HHS samples. A Cu2O high-pressure phase was found via energy-dispersive x-ray analysis in the sample treated above 5.0 GPa, which is thought to be a deleterious factor for superconductivity. Sintering under suitable pressure not only enhances the intragranular conductivity, but also effectively improves the intergranular links. Finally, via the assumed interstitial oxygen ordering in the T' structure, a possible mechanism of n-type reduction is proposed based on the change in tolerance factor under reduction atmosphere and high pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353323
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  • 6
    Electronic Resource
    Electronic Resource
    Solid-state amorphization reaction in polycrystalline Ni and amorphous Si multilayer (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7217-7221 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion-induced solid-state amorphization reaction (SSAR) in polycrystalline Ni/amorphous Si multilayers has been studied using an in situ x-ray diffraction technique together with transmission electron microscope observations. The amorphization reaction was found to occur both on the Ni/Si interfaces in terms of a planar-layer growth model and along the grain boundaries in the Ni sublayers. Thermodynamic and kinetic interpretations for the SSAR at grain boundaries are presented and an amorphous growth model is also suggested for elucidating the SSAR in polycrystalline Ni/amorphous Si multilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352395
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  • 7
    Electronic Resource
    Electronic Resource
    Nucleation of the Al4Mn alloy during containerless solidification in a drop tube (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4334-4338 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The undercooling and nucleation of Al4Mn alloy have been investigated by containerless solidification in a 1.2 m long drop tube, where molten droplets of the alloy solidified in the vacuum. Droplets in various sizes were collected at the bottom of the tube. It is found by x-ray and electron diffractions that besides the orthorhombic Al6Mn and β-Mn phases, two approximants of the decagonal quasicrystal, one approximant of the icosahedral quasicrystal and decagonal domains can be observed in the as-solidified droplets. However, due to the different cooling rate or undercooling in the samples of different sizes, the phases mentioned above will appear in different amounts. The relationship between the phase composition and the sample size is discussed on the basis of the classical nucleation and growth theories. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359457
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  • 8
    Electronic Resource
    Electronic Resource
    Silicide formation in Co/amorphous Si multilayers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1578-1584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied interfacial reactions in Co/amorphous Si(a-Si) multilayers by transmission electron microscopy. We found that an intermixed layer of amorphous cobalt silicide formed in the as-deposited state. To explain the solid-state amorphization reaction, two parameters were used. They were the thermodynamic driving force (heat of formation) and the interfacial energy. The initial amorphization reaction in Co/a-Si multilayers was thermodynamically and kinetically favored. However, the formed amorphous interlayer remained about 1 nm thick and did not grow thicker with increasing modulation period and annealing temperature. The reason for this phenomenon was that the amorphous interlayer acted as a diffusion barrier to impede the amorphization reaction in Co/a-Si multilayers. Co2Si phase was always the preferred phase in the crystallization process for different average compositions of the multilayers. The mechanism that controlled the phase selection in Co/a-Si interfacial reaction was interpreted by using the model of modified heat of formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357736
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  • 9
    Electronic Resource
    Electronic Resource
    Interdiffusion study of amorphous Ni–Si multilayer at low temperature (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2471-2474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Little is known about the interdiffusion in the amorphous Ni–Si multilayer due to the lack of suitable experimental method. In this paper, the interdiffusion phenomena in the amorphous Ni–Si multilayer are investigated by an in situ x-ray diffraction technique. The temperature-dependent interdiffusivity obtained by monitoring the decay of the first-order modulation peak as a function of annealing time can be described in terms of the Arrhenius relation. The effective interdiffusivities can be expressed as De(T)=2.13 ×10−17 exp[−(0.61±0.02)/kBT] m2/s (423–613 K). A retarded interstitial diffusion mechanism is suggested to explain the diffusion process in the amorphous multilayer films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354684
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  • 10
    Electronic Resource
    Electronic Resource
    Design of solid/liquid–liquid/solid trilayer systems for the measurement of diffusion coefficients in liquid metals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3002-3005 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new method for investigation of diffusion processes in liquid metals with solid/liquid–liquid/solid trilayer systems is described. The design of this kind of trilayers enables diffusion processes with no effects from gravity-induced convection and Maragoni-convection conditions. The Ta/Zn–Sn/Si trilayers were prepared and the interdiffusion of liquid zinc and tin at 500 °C was investigated. The interdiffusion coefficients range from 1.0×10−4 to 2.8×10−4 mm2/s, which are less than previous values measured by capillary reservoir technique under 1 g environment where various kinds of convection exist. It is the removing of disturbances of these kinds of convection that brings about the precise interdiffusion coefficients in liquid metals. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149047
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