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  • 1
    Publication Date: 2015-08-04
    Description: The lattice strain and domain switching behavior of x BiScO 3 –(1- x )PbTiO 3 ( x  = 0.40) was investigated as a function of cyclic field and grain orientation by in situ X-ray diffraction during application of electric fields. The electric field induced 200 lattice strain was measured to be five times larger than the 111 lattice strain in pseudorhombohedral x BiScO 3 –(1- x )PbTiO 3 ( x  = 0.40). It is shown that the anomalous 200 lattice strain is not an intrinsic phenomenon, but arises primarily due to stress associated with the reorientation of the 111 domains in dense polycrystalline ceramic.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 2
    Publication Date: 2016-07-28
    Description: Electric field-induced changes in the domain wall motion of (1−x)Bi(Mg 0.5 Ti 0.5 )O 3 –xPbTiO 3 (BMT-xPT) near the morphotropic phase boundary (MPB) where x = 0.37 (BMT-37PT) and x = 0.38 (BMT-38PT), are studied by means of synchrotron x-ray diffraction. Through Rietveld analysis and profile fitting, a mixture of coexisting monoclinic ( Cm ) and tetragonal ( P 4 mm ) phases is identified at room temperature. Extrinsic contributions to the property coefficients are evident from electric-field-induced domain wall motion in both the tetragonal and monoclinic phases, as well as through the interphase boundary motion between the two phases. Domain wall motion in the tetragonal and monoclinic phases for BMT-37PT is larger than that of BMT-38PT, possibly due to this composition's closer proximity to the MPB. Increased interphase boundary motion was also observed in BMT-37PT. Lattice strain, which is a function of both intrinsic piezoelectric strain and elastic interactions of the grains (the latter originating from domain wall and interphase boundary motion), is similar for the respective tetragonal and monoclinic phases.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 3
    Publication Date: 2016-07-12
    Description: The effects of gamma irradiation on the dielectric and piezoelectric responses of Pb[Zr 0.52 Ti 0.48 ]O 3 (PZT) thin film stacks were investigated for structures with conductive oxide (IrO 2 ) and metallic (Pt) top electrodes. The samples showed, generally, degradation of various key dielectric, ferroelectric, and electromechanical responses when exposed to 2.5 Mrad (Si) 60 Co gamma radiation. However, the low-field, relative dielectric permittivity, ε r , remained largely unaffected by irradiation in samples with both types of electrodes. Samples with Pt top electrodes showed substantial degradation of the remanent polarization and overall piezoelectric response, as well as pinching of the polarization hysteresis curves and creation of multiple peaks in the permittivity-electric field curves post irradiation. The samples with oxide electrodes, however, were largely impervious to the same radiation dose, with less than 5% change in any of the functional characteristics. The results suggest a radiation-induced change in the defect population or defect energy in PZT with metallic top electrodes, which substantially affects motion of internal interfaces such as domain walls. Additionally, the differences observed for stacks with different electrode materials implicate the ferroelectric–electrode interface as either the predominant source of radiation-induced effects (Pt electrodes) or the site of healing for radiation-induced defects (IrO 2 electrodes).
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
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  • 4
    Publication Date: 2016-04-05
    Description: Polymorphic phase boundaries (PPBs) in piezoelectric materials have attracted significant interest in recent years, in particular, because of the unique properties that can be found in their vicinity. However, to fully harness their potential as micro-nanoscale functional entities, it is essential to achieve reliable and precise control of their piezoelectric response, which is due to two contributions known as intrinsic and extrinsic. In this work, we have used a (K,Na)NbO 3 -based lead-free piezoceramic as a model system to investigate the evolution of the extrinsic contribution around a PPB. X-ray diffraction measurements are performed over a wide range of temperatures in order to determine the structures and transitions. The relevance of the extrinsic contribution at the PPB region is evaluated by means of nonlinear dielectric response measurements. Though it is widely appreciated that certain intrinsic properties of ferroelectric materials increase as PPBs are approached, our results demonstrate that the extrinsic contribution also maximizes. An enhancement of the extrinsic contribution is therefore also responsible for improving the functional properties at the PPB region. Rayleigh's law is used to quantitatively analyze the nonlinear response. As a result, an evolution of the domain wall motion dynamics through the PPB region is detected. This work demonstrates that the extrinsic contribution at a PPB may have a dynamic role in lead-free piezoelectric materials, thereby exerting a far greater influence on their functional properties than that considered to date.
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    Electronic ISSN: 1077-3118
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  • 5
    Publication Date: 2016-06-17
    Description: Microscopic origins of the electric-field-induced strain for three compositions of Bi 1/2 (Na 1− x K x ) 1/2 TiO 3 ( x  = 0.14, 0.18, and 0.22) (BNKT 100x ) ceramics have been compared using in situ high-energy (87.12 keV) X-ray diffraction. In the as-processed state, average crystallographic structure of BNKT14 and BNKT18 were found to be of rhombohedral symmetry, while BNKT22 was tetragonal. Diffraction data collected under electric field showed that both the BNKT14 and BNKT18 exhibit induced lattice strain and non-180° ferroelectric domain switching without any apparent phase transformation. The BNKT22 composition, in addition to the lattice strain and domain switching, showed an electric-field-induced transformation from a tetragonal to mixed tetragonal-rhombohedral state. Despite the difference in the origin of microscopic strain responses in these compositions, the measured macroscopic poling strains of 0.46% (BNKT14), 0.43% (BNKT18), and 0.44% (BNKT22) are similar. In addition, the application of a second poling field of opposite polarity to the first increased the magnitude of non-180° ferroelectric domain texture. This was suggested to be related to the existence of an asymmetric internal bias field.
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  • 6
    Publication Date: 2015-04-07
    Description: Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.
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  • 7
    Publication Date: 2015-06-19
    Description: The effect of hydrostatic pressure on the structure of Si-doped HfO 2 (Si:HfO 2 ) was studied by using a diamond anvil cell in combination with high-energy X-ray diffraction at a synchrotron source. Diffraction data were measured in situ during compression up to pressures of 31 GPa. Si:HfO 2 with 3, 5, and 9 at. % Si were found to undergo a monoclinic to orthorhombic transition at pressures between 7 and 15 GPa. Whole pattern analysis was carried out using nonpolar ( Pbca ) and polar ( Pca 2 1 ) crystallographic models to investigate the symmetry of the observed high-pressure orthorhombic phase. Rietveld refinement results cannot discriminate a reliable difference between the Pbca and Pca 2 1 structures as they nearly equally model the measured diffraction data. The pressure dependent lattice parameters, relative volume, and spontaneous strain are reported.
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  • 8
    Publication Date: 2015-06-25
    Description: Si-doped HfO 2 was confirmed to exist as a non-equilibrium state. The crystallographic structures of Si-doped HfO 2 were studied using high-resolution synchrotron X-ray diffraction and the Rietveld refinement method. Incorporation of Si into HfO 2 and diffusion of Si out of (Hf,Si)O 2 were determined as a function of calcination temperature. Higher thermal energy input at elevated calcination temperatures resulted in the formation of HfSiO 4 , which is the expected major secondary phase in Si-doped HfO 2 . The effect of SiO 2 particle size (nano- and micron-sized) on the formation of Si-doped HfO 2 was also determined. Nano-crystalline SiO 2 was found to incorporate into HfO 2 more readily.
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  • 9
    Publication Date: 2014-12-02
    Description: Grain texturing is a known method of exploiting the intrinsic dielectric and piezoelectric anisotropy in ferroelectric ceramics. However, the role of crystallographic texture on anisotropic extrinsic contributions including domain wall motion is not yet understood. Here, we investigate the dielectric and piezoelectric properties and small signal dielectric nonlinearities in K 0.5 Na 0.5 NbO 3 ceramics in different directions of textured specimens and compare to ceramics without crystallographic texture. We demonstrate that directions in which pseudo-cubic 〈100〉 poles have greatest orientation density exhibit both an enhanced longitudinal piezoelectric response and lower dielectric nonlinearity.
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  • 10
    Publication Date: 2015-12-16
    Description: Ferroelectric HfO 2 thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO 2 greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20  μ C/cm 2 and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO 2 thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO 2 thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO 2 thin films exhibit a remanent polarization greater than 15  μ C/cm 2 up to 10 8 cycles.
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