Publication Date:
2015-06-25
Description:
Si-doped HfO 2 was confirmed to exist as a non-equilibrium state. The crystallographic structures of Si-doped HfO 2 were studied using high-resolution synchrotron X-ray diffraction and the Rietveld refinement method. Incorporation of Si into HfO 2 and diffusion of Si out of (Hf,Si)O 2 were determined as a function of calcination temperature. Higher thermal energy input at elevated calcination temperatures resulted in the formation of HfSiO 4 , which is the expected major secondary phase in Si-doped HfO 2 . The effect of SiO 2 particle size (nano- and micron-sized) on the formation of Si-doped HfO 2 was also determined. Nano-crystalline SiO 2 was found to incorporate into HfO 2 more readily.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics