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  • American Institute of Physics (AIP)  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 56-65 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An energy-resolving quadrupole mass spectrometer (E-QMS) was assembled underneath the powered electrode of a diode reactive ion etcher. The plasma ions reach the E-QMS through an orifice in the powered electrode with a diameter of 100 μm. The ion energy distributions (IEDs) of ionic species from SF6 plasmas in the pressure range of 0.1–1.5 Pa for dc bias potentials between 50 and 300 V and a rf of 13.56 MHz were investigated. The IEDs always show a saddle shaped peak at an energy corresponding to a total potential drop across the sheath given by USh=Udc+UP, where Udc is the dc bias potential and UP is the time averaged plasma potential. In the energy range from 0 eV to eUdc there are multiple peaks in the IEDs of SF+x (x=1..5), whereas the F+, F+2, and S+ IEDs show only a single peak in this range. These peaks are the result of ion generating collisions in the sheath. On pressure variation the IEDs do not change significantly. We also measure IEDs of negative ions. The IEDs of these ions show a broad distribution with an intensity maximum appearing at the half of UP and a width corresponding to max[UP(t)], where UP(t) is the time varying plasma potential. These correlations suggest that these ions originate from the plasma bulk. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2784-2788 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of B and As from polycrystalline Si into single-crystal Si during rapid optical annealing (ROA) has been investigated. Samples were characterized by secondary ion mass spectrometry, transmission electron microscopy, and sheet resistance measurements. It is demonstrated that very shallow diffusion profiles in the single-crystal Si can be formed by ROA. At 1050 °C/5 s, for instance, a junction depth of ∼35 nm is obtained for As diffusion. The effect of polycrystalline Si/mono-Si interface treatment on the dopant diffusion and the polycrystalline Si grain structure will be discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3531-3533 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reproducible micromachining of hollow metal tips on Si cantilevers and their applicability to scanning probe microscopy techniques are described. Provided with apertures below 130 nm and hollow pyramidal tips proved to be highly suited probes for scanning near-field optical microscopy (SNOM). First results of combined SFM/SNOM measurements together with scanning electron microscopy (SEM) photographs of the new sensors are presented. The SNOM images show a resolution of about 100 nm demonstrating the usefulness of these probes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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