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  • 1
    Electronic Resource
    Electronic Resource
    Optical plasma monitoring of Y-Ba-Cu-O rf sputter target transients (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2670-2672 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The plasma emission spectra resulting from rf sputtering Y-Ba-Cu-O targets were observed as a function of sputter time. Although most lines of the observed spectra are not attributable to target species, peaks associated with each of the cation elements were resolved. The Ba and Cu peaks can be used as tracking indicators of process conditions. For example, switching from an O2/Ar sputter atmosphere to pure Ar enhanced the Ba peak much more than that associated with Cu. The emission spectra from a newly fabricated target exhibited a slow first-order transient response in seeking equilibrium with the rf plasma. The transient response of a previously sputtered target is also first order but has a much shorter time constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102368
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  • 2
    Electronic Resource
    Electronic Resource
    Structure at polymer interfaces determined by high-resolution nuclear reaction analysis (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1228-1230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a method based on nuclear reaction analysis, using the reaction 2H(3He, 4He)1H, (Q=18.352 MeV) to determine composition profiles of deuterated polymer chains in thin films. By detecting the emitted α particles (4He) at forward angles (30°) we are able to achieve a spatial resolution of 7 nm half width at half maximum (HWHM) at the deuterated sample surface, and 15 nm HWHM at a depth of some 130 nm. We use our method to probe initial diffusional broadening at the interface between deuterated and protonated polystyrene films. Our measured profiles are in close agreement with earlier measurements (over larger spatial scales) and with mean field models for the diffusional process in this system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103332
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  • 3
    Electronic Resource
    Electronic Resource
    Surface phase behavior in binary polymer mixtures. III. Temperature dependence of surface enrichment and of wetting (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 719-727 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Surface segregation in thin films of binary liquid mixtures consisting of random olefine copolymers was studied by nuclear reaction analysis over a wide temperature and composition range. A divergence of the surface excess Γ was indicated as the binodal of each mixture was approached from the one-phase region, even at temperatures 100 °C below the critical point Tc, and interpreted as the advent of complete wetting behavior. A consistent description of the adsorption isotherms in terms of a mean field approach assuming a short-ranged surface potential fs is feasible, but requires an unexpected temperature dependence of fs. This dependence causes the wetting transition temperature to be located lower than expected on the basis of present models. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473407
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  • 4
    Electronic Resource
    Electronic Resource
    Void-free chemically vapor-deposited aluminum dual inlaid metallization schemes for ultra-large-scale-integrated via and interconnect applications (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 82-84 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports an investigation of two unique dual inlaid metallization approaches with low pressure chemical vapor deposition (LPCVD) of aluminum (Al) for sub-0.35 μm ultra-large-scale-integration interconnect technology: (1) warm Al/CVD Al/coherent (coh.) PVD Al/coh. PVD Ti and (2) warm PVD Al/CVD Al/coh. PVD Ti or Al/selective CVD Al. The integration of thin coh. PVD Al, deposited with a physical collimator or a variation of ionized metal plasma technique, was found to be the unique and simple solution in providing void-free via and interconnect structures, which have not been reported elsewhere. Excellent electrical and electromigration results have been obtained. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121731
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  • 5
    Electronic Resource
    Electronic Resource
    Determining thin film properties by fitting optical transmittance (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1825-1830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical transmission spectra of rf sputtered tungsten oxide films on glass substrates were modeled to determine absorption edge behavior, film thickness, and index of refraction. Removal of substrate reflection and absorption phenomena from the experimental spectra allowed direct examination of thin film optical characteristics. The interference fringe pattern allows determination of the film thickness and the dependence of the real index of refraction on wavelength. Knowledge of the interference fringe behavior in the vicinity of the absorption edge was found essential to unambiguous determination of the optical band gap. In particular, the apparently random deviations commonly observed in the extrapolation of as-acquired data are eliminated by explicitly considering interference fringe phenomena. The multivariable optimization fitting scheme employed allows air-film-substrate reflection losses to be compensated without making reflectance measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346617
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  • 6
    Electronic Resource
    Electronic Resource
    Optical monitoring of ion beam Y-Ba-Cu-O sputtering (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4879-4881 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission spectra resulting from ion beam sputtering a Y-Ba-Cu-O target were observed as a function of beam voltage and beam current. The spectra were relatively clean with several peaks readily attributed to each of Y, Ba, and Ar. Monitoring of copper and oxygen was more difficult with a single CuO peak and one O peak evident. The intensities of the cation peaks were linear with respect to beam voltage above 400 V. Since target current was found not to be directly proportional to beam current, target power was defined as the product of beam voltage and target current. The response of cation peak height to changes in target power was linear and similar for variations of either beam voltage or target current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346119
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  • 7
    Electronic Resource
    Electronic Resource
    The effect of heat treatment on the superconducting properties of Cu-Nb composites (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 930-934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microfilamentary composites of continuous Nb fibers in Cu matrices were tested for superconducting transport properties after heat treatments at 200–900 °C. The critical current density at applied magnetic field was reduced dramatically as the heat treatment temperature was increased. The scaling relations describing the critical current as a function of applied field shifted from conventional (1−h)2 scaling to higher-order relations as the heat treatment history was varied. Critical temperature transitions were abnormally broad in the fine-filament composites examined. The upper critical fields and transition temperatures approached bulk values after severe heat treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345727
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  • 8
    Electronic Resource
    Electronic Resource
    Geometrical interpretation of the solutions of the sine–Gordon equation (1985)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 26 (1985), S. 2181-2185 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The sine–Gordon equation is known to possess solutions that correspond to solitons, that is, localized entities that maintain their shape after collisions, and have certain properties characteristic of elementary particles. Although the algebraic structure of these solutions is well known, their geometric interpretation as surfaces of constant negative curvature has not been previously illuminated. We discuss these surfaces herein. Curves drawn on these surfaces along the asymptotic directions at each point simulate solutions of the nonlinear wave equation φxx−φtt=sin φ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.526842
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  • 9
    Electronic Resource
    Electronic Resource
    The Quadrumafios electron cyclotron resonance ion source: Presentation and analysis of the resultsa) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1714-1717 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Quadrumafios electron cyclotron resonance ion source (ECRIS) has been especially designed to permit physical studies of the plasma; this paper describes the source itself (which has been operated at 10 GHz in a first step), its preliminary performances, and the different diagnostics involved, which mainly concern the electron population (ECE, x rays, diamagnetism, microwave interferometer, and electron analyzer). The results are presented and discussed: There is of course a close relationship between the parameters of the plasma and the performances of the source; this point will be discussed in the article.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144864
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  • 10
    Electronic Resource
    Electronic Resource
    ECR ion source and spectrometer for the new high charge state injector at GSI : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2883-2885 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For the new high charge state injector (HLI)at GSI a 14.5 GHz electron cyclotron resonance ion source of CAPRICE type was built at CEN-Grenoble. Test bench results were obtained prior to installation at HLI for Ar and Fe including emittance data. The HLI installation of the source and the high-resolution spectrometer is described in some detail. First systematic studies for Ar charge state spectra (including gas mixing) are presented. The spectrometer resolution was tested using Xe isotopes. The analyzed beam is very stable and proved to be well suited for injection into the RFQ accelerator.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142786
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