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  • 1
    Electronic Resource
    Electronic Resource
    Excited states of ^9^3Mo
    Amsterdam : Elsevier
    Nuclear Physics, Section A 111 (1968), S. 100-104 
    Details
    ISSN: 0375-9474
    Keywords: Enriched target ; ^9^2Mo(d, p), E = 10.1 MeV; measured σ(E"p, θ) ; ^9^3Mo deduced levels
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0375-9474(68)90446-6
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  • 2
    Electronic Resource
    Electronic Resource
    Negative transconductance and negative differential resistance in a grid-gate modulation-doped field-effect transistor (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 460-462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on transport measurements in grid-gate lateral-surface-superlattice (LSSL) field-effect transistors on a modulation-doped GaAs/AlGaAs heterostructure. The LSSL is created by a 0.2 μm period Ti/Au grid on top of the AlGaAs layer, which presents a tunable, two-dimensional periodic potential modulation to the electrons traveling from source to drain. Current measurements at 4.2 K as a function of gate bias exhibit negative transconductance at a fixed drain bias below 15 mV, providing evidence of a superlattice effect (i.e., coherent back-diffraction). In addition, negative differential resistance is observed at a fixed gate bias and a drain bias around 100 mV, which could be a manifestation of sequential resonant tunneling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100952
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  • 3
    Electronic Resource
    Electronic Resource
    Optical plasma monitoring of Y-Ba-Cu-O rf sputter target transients (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2670-2672 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The plasma emission spectra resulting from rf sputtering Y-Ba-Cu-O targets were observed as a function of sputter time. Although most lines of the observed spectra are not attributable to target species, peaks associated with each of the cation elements were resolved. The Ba and Cu peaks can be used as tracking indicators of process conditions. For example, switching from an O2/Ar sputter atmosphere to pure Ar enhanced the Ba peak much more than that associated with Cu. The emission spectra from a newly fabricated target exhibited a slow first-order transient response in seeking equilibrium with the rf plasma. The transient response of a previously sputtered target is also first order but has a much shorter time constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102368
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  • 4
    Electronic Resource
    Electronic Resource
    Determining thin film properties by fitting optical transmittance (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1825-1830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical transmission spectra of rf sputtered tungsten oxide films on glass substrates were modeled to determine absorption edge behavior, film thickness, and index of refraction. Removal of substrate reflection and absorption phenomena from the experimental spectra allowed direct examination of thin film optical characteristics. The interference fringe pattern allows determination of the film thickness and the dependence of the real index of refraction on wavelength. Knowledge of the interference fringe behavior in the vicinity of the absorption edge was found essential to unambiguous determination of the optical band gap. In particular, the apparently random deviations commonly observed in the extrapolation of as-acquired data are eliminated by explicitly considering interference fringe phenomena. The multivariable optimization fitting scheme employed allows air-film-substrate reflection losses to be compensated without making reflectance measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346617
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  • 5
    Electronic Resource
    Electronic Resource
    Optical monitoring of ion beam Y-Ba-Cu-O sputtering (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4879-4881 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission spectra resulting from ion beam sputtering a Y-Ba-Cu-O target were observed as a function of beam voltage and beam current. The spectra were relatively clean with several peaks readily attributed to each of Y, Ba, and Ar. Monitoring of copper and oxygen was more difficult with a single CuO peak and one O peak evident. The intensities of the cation peaks were linear with respect to beam voltage above 400 V. Since target current was found not to be directly proportional to beam current, target power was defined as the product of beam voltage and target current. The response of cation peak height to changes in target power was linear and similar for variations of either beam voltage or target current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346119
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  • 6
    Electronic Resource
    Electronic Resource
    Profiling of BaTiO3 ion beam sputtering by optical spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 505-507 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical emission spectra resulting from argon ion beam sputtering a BaTiO3 target were observed as a function of position. A collimated optical fiber bundle parallel to the plane of the sputter target was translated vertically and horizontally to spectroscopically profile the sputter process. The Ar contours provide an image of the incident beam and its distortion by the presence of the target. Comparison of the Ar and O contours indicate that the oxygen atmosphere in the vicinity of the target is determined by sputtering events as well as the incident beam. The shapes of the Ba and Ti contours are elliptical with some slight differences in intensity gradients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350261
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  • 7
    Electronic Resource
    Electronic Resource
    Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6389-6393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc's. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345161
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  • 8
    Electronic Resource
    Electronic Resource
    Near-infrared electrochromism in LixC60 films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 599-601 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fullerene thin films deposited on transparent substrates were found to exhibit electrochromic switching in the near infrared. The as-deposited films were optically transparent between 0.9 and 2.0 μm. The oxidation state of the fullerene films was altered by electrochemical insertion of Li ions from a liquid electrolyte. Upon Li insertion the transmittance of the films decreased markedly in the near infrared. Subsequent Li extraction restored most of the original transparency. The observed electrochromism occurs due to switching between the C60 and C601− oxidation states. Electrochemically, the insertion process is highly reversible. The lack of complete optical reversibility is attributed to solubility of C601− in the electrolyte employed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109961
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  • 9
    Electronic Resource
    Electronic Resource
    Ion beam deposition of in situ superconducting Y-Ba-Cu-O films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 394-396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria-stabilized zirconia substrates by ion beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 80.5 K without post-deposition anneals. Both the deposition rate and the c lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c dimensions and low Tc's. Higher power sputtering produced a continuous decrease in the c lattice parameter and an increase in critical temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103292
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  • 10
    Electronic Resource
    Electronic Resource
    Alternative modes of population growth inhibition in a human lymphoid cell line growing in suspension
    Amsterdam : Elsevier
    Experimental Cell Research 107 (1977), S. 325-341 
    Details
    ISSN: 0014-4827
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0014-4827(77)90355-X
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