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  • American Institute of Physics (AIP)  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Diminution of the surface states on GaAs by a sulfur treatment (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1959-1961 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface chemical properties of a GaAs layer grown by molecular beam epitaxy were investigated by photoluminescence (PL) and photoreflectance (PR) measurements. While the intensity of the PL spectra for the sulfur-treated GaAs, using a (NH4)2Sx solution, increased 75 times compared to that for the as-grown GaAs, the peaks for the as-grown GaAs measured by PR vanished after a sulfur treatment. These results indicate that the surface state acting as the nonradiative recombination centers was passivated by the sulfur. The chemical adsorption behavior resulting from the sulfur is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357656
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  • 2
    Electronic Resource
    Electronic Resource
    Carbon impurity effects in Al-Ga interdiffused GaAs/AlAs multiple quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2415-2418 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) measurements were performed in order to investigate the carbon impurity effects on the intermixing behavior of GaAs/AlAs multiple quantum wells (MQWs) grown by molecular-beam epitaxy. The GaAs/AlAs MQWs were annealed with a carbon source in a furnace annealing system. The PL spectra show that the magnitude of the intermixing of Al and Ga induced by thermal annealing in GaAs/AlAs MQWs increases with depth. This behavior is not in agreement with the intermixing mechanism considering vacancy injection of the surface. The nonuniformity of the intermixing as a function of the depth originated from the carbon impurities which were injected during thermal treatment. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358767
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  • 3
    Electronic Resource
    Electronic Resource
    Computer simulation of Si-implanted GaAs (001) single crystals (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 229-233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A computer simulation based on the binary collision approximation has been performed to investigate the Si implantation efficiency, the Si depth profile, and the vacancy formation for Si-implanted GaAs (001) crystals. The results reveal a strong dependence on the incident angle of the Si source. The calculated depth profile of Si agrees well with the experimental results from secondary-ion mass spectroscopy. The simulated distribution of vacancies is shallower than that of Si atoms. Also, the calculated number of Ga vacancies exceeds that of As vacancies, which suggests that the Si atoms easily occupy the Ga sites and are activated as donors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352164
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  • 4
    Electronic Resource
    Electronic Resource
    Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2502-2504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050 °C for 30 s. Metal–oxide–semiconductor (MOS) structures were fabricated and capacitance–voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29 eV (H1) and Ev+0.42 eV (H2), and the capture cross sections are 4.70×10−16 cm2 and 1.44×10−15 cm2, respectively. The presence of Si(Single Bond)H and Si(Single Bond)H2 bonds was confirmed by Fourier transform infrared spectroscopy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467617
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