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  • American Institute of Physics (AIP)  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Two-dimensional defects in InSe (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5267-5271 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional precipitates associated with stacking faults in layer semiconductors have previously been put forward to explain transport properties of these crystals, especially their remarkable electrical anisotropy. High-field cyclotron resonance behavior, among others, can be accounted for by two-dimensional accumulation layers in the vicinity of these defects. Direct evidence for the existence of these defects has been obtained by electron microscopy and x-ray microprobe analysis in indium selenide. Planar faults act like sinks for impurity atoms. This accounts for the unique behavior of layer compounds which exhibit intrinsic behavior (low apparent carrier concentration—high mobilities) even with high (100 ppm) initial doping levels. Optical, transport, and magnetotransport properties at low temperature can be explained along this model. As regards the applications of indium selenide to the photovoltaic conversion of solar energy, the existence of these defects explains most features of this semiconductor in this respect: (i) Its comparatively low effective diffusion length parallel to the c axis. (ii) p- to n-type switching under thermal annealing which allows fabrication of p-n junctions. (iii) Low apparent carrier density which precludes abrupt profiles for p-n structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338261
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  • 2
    Electronic Resource
    Electronic Resource
    p-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1695-1697 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS layers were grown by metalorganic vapor phase epitaxy on GaAs substrates using diethylzinc, ditertiarybutyl sulphide, and triallylamine as organometallic sources. After postgrowth rapid thermal annealing, the ZnS layers showed p-type conductivity with hole concentrations up to 1018 cm−3. Photoluminescence measurements gave additional indications of the presence of electrically active nitrogen acceptors. In separate experiments, lithium was diffused from a LiH solid source into ZnS layers grown without the nitrogen precursor. High-conductivity p-type material was directly obtained with no need of thermal anneal. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126139
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  • 3
    Electronic Resource
    Electronic Resource
    Sputtered BiPbSrCaCuO films on polycrystalline CuO substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1496-1497 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BiPbSrCaCuO films have been deposited for the first time onto polycrystalline CuO substrates by dc sputtering. The films become superconducting after they are post-annealed in air. Zero resistivity is observed between 38 and 72 K depending on the annealing conditions. The sample showing an onset at 105 K gives an extrapolated zero resistivity at 90 K. The preparation and annealing conditions are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103212
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