Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1695-1697
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
ZnS layers were grown by metalorganic vapor phase epitaxy on GaAs substrates using diethylzinc, ditertiarybutyl sulphide, and triallylamine as organometallic sources. After postgrowth rapid thermal annealing, the ZnS layers showed p-type conductivity with hole concentrations up to 1018 cm−3. Photoluminescence measurements gave additional indications of the presence of electrically active nitrogen acceptors. In separate experiments, lithium was diffused from a LiH solid source into ZnS layers grown without the nitrogen precursor. High-conductivity p-type material was directly obtained with no need of thermal anneal. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126139
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