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  • American Institute of Physics (AIP)  (7)
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  • 1
    Electronic Resource
    Electronic Resource
    Hole injection in AlGaAs Schottky barriers: Influence on the DX center occupation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5072-5078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that current instabilities, which are frequently observed at low temperatures in forward biased Schottky barriers on n-type AlGaAs, result from changes in the distribution of negatively charged donors (DX centers) near the metal contact. These changes cannot be ascribed to sample-heating effects, but they originate from hole injection in the barrier during forward biasing. The dominant mechanisms which are expected to induce the observed distortions in the DX center profile are (i) direct capture of the injected holes by the DX center and (ii) radiative electron-hole recombination resulting in DX center photoionization. The role of the two mechanisms is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355750
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  • 2
    Electronic Resource
    Electronic Resource
    DX-center-related features by capacitance measurements in AlGaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 215-220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of quasistatic C-V measurements in investigating DX-center-related features in AlGaAs (x=0.25, 0.30, and 0.35) Schottky barriers has been reconsidered under different experimental conditions. The vanishing of the electron-capture rate by the DX center, at low temperature, is responsible for a frozen-step-like density profile of positively charged DX centers near the metal-semiconductor interface. This causes a knee-shaped 1/C2-vs-V plot and gives rise to an apparent built-in potential. The low-temperature freezing in of the free-electron density in the flatband region has been demonstrated through specific experiments of thermally stimulated capacitance and low-temperature C-V measurements performed on the sample cooled at different cooling rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350313
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  • 3
    Electronic Resource
    Electronic Resource
    Minority carrier capture at DX centers in AlGaSb Schottky diodes (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5337-5341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole capture at DX centers is evidenced in Schottky diodes made on Te-doped AlGaSb under forward bias conditions. Capacitance versus voltage measurements performed at low temperatures show that the occupancy of the DX centers is affected by sufficiently large forward biases. The current densities required to achieve such modifications are at least one order of magnitude smaller than those needed in Si-doped AlGaAs. Positive deep level transient spectroscopy signals are systematically detected in all the samples studied when forward-bias filling pulses are used. These observations are discussed in terms of minority carrier (hole) injection and subsequent capture by the DX centers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368783
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  • 4
    Electronic Resource
    Electronic Resource
    Use of spatially dependent electron capture to profile deep-level densities in Schottky barriers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1285-1291 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new procedure to profile deep-level densities within the space-charge region of Schottky barriers is presented. The method takes advantage of the spatial dependence of the time constant for the free-electron capture by deep-donor traps. The amplitude of the slow component of the capture capacitance transient following a negative reverse voltage pulse is simply related to the trap density at the point where the Fermi level crosses the trap level itself. The density profile of a given trap can be achieved by measuring the slow-component transient signal as a function of the reverse voltage at a suitably chosen constant temperature. The estimated spatial resolution of the method was near 50 A(ring) in a practical case. Experimental density profiles for EL14, EL8, EL3, and the EC−ET =0.37 eV level in Cr/GaAs and Al/GaAs Schottky barriers are presented and discussed. The procedure is expected to be also applicable to the case of trap densities comparable with the shallow-donor density without introducing large errors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336096
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  • 5
    Electronic Resource
    Electronic Resource
    Deep levels in GaAs grown by atomic layer molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2848-2850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study on deep levels in GaAs:Si grown by atomic layer molecular beam epitaxy (ALMBE). We show that in ALMBE GaAs grown at temperatures TS in the range 370–530 °C, the deep level concentrations: (i) are up to 3 orders of magnitude smaller than those of material grown by molecular beam epitaxy (MBE) at similar temperature ranges, and (ii) can be compared to those of GaAs grown by MBE at 600 °C. These features are independent whether Si is supplied during: (a) both the Ga and As subcycles, (b) the As subcycles, or (c) the Ga subcycles. Therefore, as for deep levels, ALMBE GaAs grown at 370≤TS≤530 °C can be related to GaAs prepared by MBE at conventional temperatures. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112512
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  • 6
    Electronic Resource
    Electronic Resource
    Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7604-7611 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As-grown Fe-doped semiconducting InP wafers (residual carrier concentration ≤1015 cm−3, estimated iron concentration 5–8×1015 cm−3) were converted to semi-insulating, with high resistivity and good mobility, when annealed under appropriate conditions. This fact is very interesting, since it permits the preparation of semi-insulating InP with an Fe content substantially lower than that of standard as-grown material. In this article, we report the annealing parameters, together with the results of an extensive characterization (Hall effect, C–V, infrared absorption, and photoinduced current transient spectroscopy) of the treated samples. The onset of the semi-insulating regime seems to be primarily due to an annealing-related loss of shallow donors. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365336
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  • 7
    Electronic Resource
    Electronic Resource
    Deep levels in virtually unstrained InGaAs layers deposited on GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2965-2967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dislocation-related deep levels in InxGa1−xAs layers grown by molecular beam epitaxy on GaAs substrates have been investigated. Virtually unstrained InGaAs layers with mole fraction x of 0.10, 0.20, and 0.30 have been obtained by properly designing the In composition of linearly graded InxGa1−xAs buffers. Two electron traps, labeled as E2 and E3, whose activation energy scales well with the energy gap, have been found. Unlike E2, E3 shows: (i) a logarithmic dependence of the deep level transient spectroscopy amplitude on the filling pulse width and (ii) an increase of concentration as the buffer/InGaAs interface is approached. These findings, together with the observation that, in compressively strained In0.2Ga0.8As, the E3-related concentration is definitely higher than that of virtually unstrained In0.2Ga0.8As, indicate that this trap is likely originated by extended defects like threading dislocations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368404
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