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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Using masks to obtain uniform ion etch rates (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1853-1855 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For milling over large areas there is need for broad ion beam sources with a uniform etch rate profile. Currently uniform ion beam density is obtained in the central portion of the ion source by manipulating the grids and the magnets in the ion source. We have designed and implemented specially shaped hard masks to a rotating substrate holder. This mask is able to transform the Gaussian etch rate profile of a 150-mm-diam Oxford ion source to a flat profile. The flat profile decreases the etch rate in the central portion while maintaining the same etch rate along the edge. The deviation in the ion beam etch rate is within 5% in the flat region. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464657
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  • 2
    Electronic Resource
    Electronic Resource
    Biaxially aligned buffer layers of cerium oxide, yttria stabilized zirconia, and their bilayers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2816-2818 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Biaxially aligned cerium oxide (CeO2) and yttria stabilized zirconia (YSZ) films were deposited on Ni-based metal (Hastelloy C276) substrates held at room temperature using ion beam assisted (IBAD) magnetron deposition with the ion beam directed at 55° to the normal of the film plane. In addition, we achieved, room-temperature epitaxial growth of CeO2 by bias sputtering to form biaxially aligned CeO2/YSZ bilayers. The crystalline structure and in-plane orientation of films was investigated by x-ray diffraction techniques. Both the IBAD CeO2 and YSZ films, and the CeO2/YSZ bilayers have a (111) pole in the ion beam direction. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119017
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