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  • 1
    Electronic Resource
    Electronic Resource
    Low spectral modulation high-power output from a new AlGaAs superluminescent diode/optical amplifier structure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2289-2291 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A double-heterojunction angled stripe AlGaAs device consisting of an index-guided ridge waveguide with gain-guided facet regions has produced cw output powers of 20 mW with less than 1% spectral modulation from a 300-μm-long diode. These properties enable these devices to have important use in high-sensitivity fiber optic gyroscopes and as broadband traveling-wave optical amplifiers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102040
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  • 2
    Electronic Resource
    Electronic Resource
    Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1501-1503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance of a series of InxGa1−xAs/AlGaAs (x=0.20 and 0.25) strained single quantum well (SSQW) lasers with lasing wavelengths in the range 930≤λ≤1000 nm is discussed. Less-strained devices, with x=0.20 and QW thickness 7 nm (λ∼930 nm), perform comparably with GaAs QW lasers. Longer wavelength (λ〉950 nm), more highly strained lasers exhibit poorer performance. Our results suggest that interfacial recombination limits the performance at the longer wavelength structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101590
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  • 3
    Electronic Resource
    Electronic Resource
    High-power GaAs/AlGaAs diode lasers grown on a Si substrate by metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2552-2554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power GaAs/AlGaAs double-heterostructure lasers have been fabricated on Si substrates using a single-step metalorganic chemical vapor deposition process. An output power of 130 mW (per facet) and a slope efficiency of 38% have been obtained under pulsed operation. The peak emission wavelength of the laser was 8823 A(ring) and the beam full width at half power for the parallel and perpendicular far-field radiation patterns were 6° and 41°, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100205
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  • 4
    Electronic Resource
    Electronic Resource
    Continuous, high-power operation of a strained InGaAs/AlGaAs quantum well laser (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2371-2373 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous wave (cw), high-power operation of a strained In0.2Ga0.8As/ AlGaAs quantum well laser, grown by atmospheric pressure organometallic vapor phase epitaxy, is reported. The laser active region consists of a single 70 A(ring) In0.2Ga0.8As/Al0.2Ga0.8As quantum well, with optical confinement provided by a graded index separate confinement heterostructure. The threshold current density and differential quantum efficiency of a 90 μm×600 μm stripe with uncoated facets are ∼200 A/cm2 and 46%, respectively. Lasing wavelength is ∼930 nm, and the cw single ended power versus current characteristic is linear up to 250 mW (1 A current). In the short-cavity (〈300 μm) regime, these devices have high thresholds and have been observed to lase at shorter wavelength, presumably due to a saturation of gain at the lowest energy transition. The characteristic temperature is 150 K and decreases somewhat with cavity length. This suggests that some nonradiative process, most likely Auger recombination, contributes significantly to quantum well gain saturation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100233
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  • 5
    Electronic Resource
    Electronic Resource
    High-power conversion efficiency in a strained InGaAs/AlGaAs quantum well laser (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3340-3343 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A strained quantum well laser with a front-end power conversion efficiency exceeding 33% under continuous-wave operation is demonstrated. The laser structure, grown by atmospheric pressure organometallic vapor-phase epitaxy, consists of a 70-A(ring) In0.2Ga0.8As quantum well active region with graded index separate confinement heterostructure. Lasing wavelength is 930 nm, and the front-end differential quantum efficiency is 58% for broad-area oxide stripe lasers with a high-reflection coating on the rear facet. Front-end, continuous power outputs greater than 1 W are available. Although these strained quantum well lasers have threshold currents as low as lattice-matched GaAs quantum well lasers, their internal quantum efficiencies appear to be reduced, thus limiting the maximum attainable conversion efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342646
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  • 6
    Electronic Resource
    Electronic Resource
    A comparison of CaF2:Mn thermoluminescent dosimeter chips to aluminum and silicon x-ray calorimeters in the pulsed Hermes III environment : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 737-739 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Hermes III is a pulsed power, Bremsstrahlung simulator used for radiation-hardness testing of electronics components [19-MeV spectrum, 20-ns pulse duration, and typical doses (silicon) ≤100 krad (1 kGy)]. CaF2:Mn thermoluminescent dosimeter chips (TLDs) have been compared to a set of x-ray calorimeters in the Hermes III environment for doses between 10–75 krad. Similar to a design reported by Murray and Attix, this set of detectors included different dosimetric materials (silicon and aluminum) and two independent temperature sensors (thermistors and thermocouples). The electronic recording system was also updated. The average disagreement between TLDs and calorimeters was 1%–3%. Radiation transport calculations, however, suggest a possible bias of 4%–6% (source unknown). With the silicon calorimeter the ac bridge, which measured the resistance of thermistor temperature sensors, was extremely sensitive to EMP. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146274
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  • 7
    Electronic Resource
    Electronic Resource
    Low-pressure, low-temperature, and remote-plasma deposition of diamond thin films from water-methanol mixtures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2863-2865 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have deposited diamond thin films remote from the active plasma region using an electron cyclotron resonance chemical vapor deposition technique. Diamond films were fabricated at temperatures in the range of 550–650 °C and gas pressures between 25 and 60 mTorr. The volume ratio of water to methanol was varied from 1:20 to 1:5 to optimize diamond film growth. High methanol content resulted in multiple nucleation in the growing diamond film, while higher water content led to complete etching of the film. A positive electrical bias was found to be essential for diamond thin film growth remote from the plasma region. The films were characterized by x-ray diffraction, micro-Raman, and scanning electron microscopy for phase identification, surface morphology, and bonding characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108058
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of adherent diamond films on optically transparent sapphire substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2181-2183 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of continuous adherent diamond thin films on optically transparent substrates is important for the development of corrosion and erosion resistant infrared windows for many applications. Until now, the growth of adherent diamond films on optically transparent substrates like sapphire has been unsuccessful due to the large thermal mismatch between the film and the substrate and the absence of an interfacial carbide "glue'' layer. By employing a low temperature (500–550 °C), low pressure (∼1 Torr) electron–cyclotron–resonance chemical-vapor-deposition process, and utilizing a dispersed–particulate diamond suspension for nucleation, adherent diamond thin films have been fabricated on sapphire substrates. Raman spectroscopy showed that the diamond peak was shifted approximately 6 cm−1 above its equilibrium position, suggesting the presence of very large compressive stresses (∼3.2 GPa) in the film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117158
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  • 9
    Electronic Resource
    Electronic Resource
    Improving the performance of strained InGaAs/AlGaAs single quantum well lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 318-320 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By adjusting the carrier confining structure and the optical confining structure of strained InGaAs/AlGaAs single quantum well (QW) lasers, an improvement in performance has been obtained. First, the influence of optical confinement was examined by comparing two graded-index confining structures. For InxGa1−xAs QWs with either x=0.20 or x=0.25, lasers with greater optical confinement factor had improved performance, with both lower threshold (180 A/cm2 for x=0.20) and higher characteristic temperature (250 K for x=0.20), despite their reduced carrier confining potentials. Second, experiments on graded-composition quantum wells show that thin step-grading layers result in improved performance. In this structure, where the QW has x=0.35, and the step layers have x=0.15, the optimum step thickness is 30–40 A(ring). Thicker step layers appear to create too much strain, degrading the laser operation. These results indicate that step grading of strained QWs produces active region interfaces with lower defect density, and that step grading is especially useful in improving the performance of long-wavelength, highly strained InGaAs/AlGaAs QW lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102815
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  • 10
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    Invited Article: Characterization of background sources in space-based time-of-flight mass spectrometers (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-09-18
    Description: For instruments that use time-of-flight techniques to measure space plasma, there are common sources of background signals that evidence themselves in the data. The background from these sources may increase the complexity of data analysis and reduce the signal-to-noise response of the instrument, thereby diminishing the science value or usefulness of the data. This paper reviews several sources of background commonly found in time-of-flight mass spectrometers and illustrates their effect in actual data using examples from ACE-SWICS and MESSENGER-FIPS. Sources include penetrating particles and radiation, UV photons, energy straggling and angular scattering, electron stimulated desorption of ions, ion-induced electron emission, accidental coincidence events, and noise signatures from instrument electronics. Data signatures of these sources are shown, as well as mitigation strategies and design considerations for future instruments.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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