ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Raman-scattering assessment of Si+-implantation damage in InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3927-3929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the lattice damage caused by Si+ implantation into semi-insulating InP, with doses in the range of 1012 to 5×1014 cm−2, and the subsequent lattice recovery achieved by rapid thermal annealing (RTA), by means of Raman spectroscopy. With increasing implantation dose, an intensity reduction of the first- and second-order Raman peaks characteristic of crystalline InP is observed, together with the enhancement of disorder-activated modes. In samples implanted with doses higher than 1014 cm−2 the Raman spectra resembles that of amorphous InP, and the samples can be considered as fully amorphized. By RTA at 875 °C for 10 s, sample crystallinity is recovered, even in the case of those samples implanted with the highest dose. After annealing, the Raman spectra show no evidence of disorder-activated modes, and the intensity of the characteristic second-order peaks approaches the value found in unimplanted InP. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361819
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 600-603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 °C. The electrical properties of the structures were analyzed according to capacitance–voltage and deep level transient spectroscopy measurements. We deduce an inverse correlation between the insulator composition—the N/Si ratio—and the density of interface traps: those films with the maximum N/Si ratio (1.49) produce devices with the minimum trap density—2×1012 cm−2 eV−1 at 0.42 eV. above the midgap. We explain the influence of film composition on the interface trap density in terms of a substitution of phosphorous vacancies at the InP surface, Vp, by N atoms coming from the insulator, NVp. The values obtained in our research for the interface trap distribution were similar to other published results for devices that use chemical and/or physical passivation processes of the InP surface prior to the deposition of the insulator.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366647
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Use of Kramers–Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7830-7836 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of Kramers–Kronig transforms is proposed for the treatment of admittance spectroscopy data of junctions when significant shunt conductance or series resistance is present. An algorithm has been implemented to calculate the transformations numerically and the validity of the method developed has been tested using simulated data. Two experimental systems, p-n junctions into InP made by ion implantation, and atomic-layer-epitaxy-grown CdS/CdTe heterojunctions, have been characterized using this procedure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362391
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5325-5330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage, small-signal measurements, and deep-level transient spectroscopy (DLTS) spectra of p-n junctions made by Mg implantation into undoped InP are described. The I-V characteristics show that the dominant conduction mechanism at forward bias is recombination in the space-charge zone, whereas a thermally activated tunneling mechanism involving a trap at 0.32 eV dominates at reverse bias. Five deep levels located in the upper-half of the band gap were detected in the junctions by DLTS measurements, three of which (at 0.6, 0.45, and 0.425 eV) were found to appear due to rapid thermal annealing. The origin of the other two levels, at 0.31 and 0.285 eV, can be ascribed to implantation damage. Admittance spectroscopy measurements showed the presence of three levels at 0.44, 0.415, and 0.30 eV, all in agreement with those found by DLTS. The DLTS measurements showed that the concentration of deep levels decreased after longer annealing times, and that the concentration of deep levels due to the implantation increased after additional P or Si implantations. This explains the influence of annealing time and additional implantations on the I-V characteristics of the junctions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359710
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Optical properties of polycrystalline Cd1−xMnxTe (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3459-3463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk polycrystalline cadmium manganese telluride, Cd1−xMnxTe, was manufactured in several compositions by a synthesis process. The structure of the obtained compounds was the characteristic zinc-blende polycrystalline pattern being the grain size 100±20 nm. These materials are manufactured to replace single-crystal compounds in some magneto-optical devices. The cut-off wavelength and the Verdet constant are the same as the single-crystals with identical composition. A polarized laser beam, after having passed through a sample of 0.76 mm thickness, was depolarized less than 2.5%, and 90% of its energy was spread into a 2° cone. Scattering of light is produced because of the polycrystalline structure of these compounds. Some scattering diagrams, due to the diffraction and Mie scattering in the polycrystalline grains are shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354521
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 189-194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growth temperature. At substrate temperatures lower than 300 °C amorphous or poorly crystalline Se-excess films are obtained, showing high resistivity (≈103 Ω cm) and optical transitions at 1.62, 1.80, and 2.4 eV (values lower than the single-crystal counterparts). At the higher growth temperatures, polycrystalline films are obtained (average grain size 0.7 μm) with lower values of resistivity (1 Ω cm), and optical transitions at 1.68, 1.90, and 2.55 eV (very close to the single-crystal values). A hopping conduction mechanism has been detected at the lower measuring temperature (T〈150 K), and a grain boundary limited conduction process at the higher measurements temperature (T〉150 K). Structural and compositional characteristics are used to explain the behavior observed in the electrical and optical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347113
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Role of deep levels and interface states in the capacitance characteristics of all-sputtered CuInSe2/CdS solar cell heterojunctions (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3236-3241 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: All-sputtered CuInSe2/CdS solar cell heterojunctions have been analyzed by means of capacitance-frequency (C-F) and capacitance-bias voltage (C-V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed: type 1 heterojunctions (based on stoichiometric or slightly In-rich CuInSe2 layers) and type 2 heterojunctions (based on Cu-rich CuInSe2 layers). In type 1 heterojunctions, a 80-meV donor level has been found. Densities of interface states in the range 1010–1011 cm2 eV−1 (type 1) and in the range 1012–1013 cm−2 eV−1 (type 2) have been deduced. On the other hand, doping concentrations of 1.6×1016 cm−3 for stoichiometric CuInSe2 (type 1 heterojunction) and 8×1017 cm−3 for the CdS (type 2 heterojunction) have been deduced from C-V measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342676
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+p junction devices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3478-3482 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850–875 °C for 10–20 s, electrical activations of about 100%, and mobilities as high as 4000 cm2/V s were obtained. Different Hall measurements show that there is no redistribution of the dopants. Photoluminescence measurements demonstrate the satisfactory recrystallization of the lattice and the excellent activation of the dopants. Electrical characteristics of n+p junctions made by Si implantation into Zn-doped In0.53Ga0.47As are described. Junction behavior at forward bias could be explained by recombination in the space-charge zone mechanisms, whereas different tunneling processes dominate at reverse bias. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372369
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2055-2061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the effect of thermal processes on the optical properties (refractive index, optical gap, Tauc coefficient, and Urbach energy) of SiNx:H films. Films with three different nitrogen to silicon ratios (x=0.97, x=1.43, and x=1.55, respectively) were deposited by a chemical vapor deposition technique assisted by an electron cyclotron resonance generated plasma. After deposition they were subjected to rapid thermal annealing at temperatures ranging from 300 °C to 1050 °C. We found that the percolation threshold for Si–Si bonds (at x=1.1) separates films with different response to thermal treatments. The changes of the Tauc coefficient and the Urbach energy at moderate annealing temperatures indicate a structural relaxation of the network for the films with x above the percolation threshold, while at higher temperatures the trends are inverted. In the case of x below the percolation limit the inversion point is not observed. These trends are well correlated with the width of the Si–N infrared stretching absorption band. Additionally the samples with as-grown x=1.43 show a good correlation between the Urbach energy and the density of unpaired spins in silicon dangling bonds. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371008
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    CuInSe2 thin films produced by rf sputtering in Ar/H2 atmospheres (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4163-4169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural, compositional, optical, and electrical properties of CuInSe2 thin films grown by rf reactive sputtering from a Se excess target in Ar/H2 atmospheres are presented. The addition of H2 to the sputtering atmospheres allows the control of stoichiometry of films giving rise to remarkable changes in the film properties. Variation of substrate temperature causes changes in film composition because of the variation of hydrogen reactivity at the substrate. Measurements of resistivity at variable temperatures indicate a hopping conduction mechanism through gap states for films grown at low temperature (100–250 °C), the existence of three acceptor levels at about 0.046, 0.098, and 0.144 eV above valence band for films grown at intermediate temperature (250–350 °C), and a pseudometallic behavior for film grown at high temperatures (350–450 °C). Chalcopyrite polycrystalline thin films of CuInSe2 with an average grain size of 1 μm, an optical gap of 1.01 eV, and resistivities from 10−1 to 103 Ω cm can be obtained by adding 1.5% of H2 to the sputtering atmosphere and by varying the substrate temperature from 300 to 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339135
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...