ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
CuGaxIn1−xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x=0.25, x=0.5, and x=0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350 °C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x=0, x=0.5, and x=0.75, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107140
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