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Digitale Medien

Excited-state absorption measurement in Ge-doped SiO2 glass (1997)

Fujimaki, Makoto ; Seol, Kwang Soo ; Ohki, Yoshimichi

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 81 (1997), S. 2913-2915

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Optical absorption change in the microsecond order in oxygen-deficient Ge-doped SiO2 glass was measured as a function of time just after photon irradiation from a KrF excimer laser. The absorption above 3 eV was found to decay with a similar time constant as that of the luminescence at 3.1 eV. From this, it is confirmed that the observed absorption change is due to the excitation of electrons from the lowest excited triplet state to an upper state. By taking account of the energy range of the absorption, there is a high possibility that the upper state is the conduction band. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.363964

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2

Digitale Medien

Energy states of Ge-doped SiO2 glass estimated through absorption and photoluminescence (1997)

Fujimaki, Makoto ; Ohki, Yoshimichi

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 81 (1997), S. 1042-1046

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The energy states of oxygen-deficient type defects in the vacuum ultraviolet region are discussed based on the experimental results of vacuum ultraviolet absorption, temperature dependence of the photoluminescence (PL) intensities at 4.3 and 3.1 eV, and lifetimes of the PLs. It was found that the oxygen-deficient type glass has a large absorption tail above 6 eV in addition to an absorption band around 5 eV and that the 3.1 eV PL intensity scarcely depends on temperature when excited above 6 eV. It was also found that the lifetime of the 4.3 eV PL is 9 ns and that of the 3.1 eV PL is 113 μs irrespective of the excitation photon energy. The obtained results are explainable by assuming that electrons excited into the conduction band by photons above 6 eV contribute to the PLs. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.363885

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Digitale Medien

Ion-implantation-induced densification in silica-based glass for fabrication of optical fiber gratings (2000)

Fujimaki, Makoto ; Nishihara, Yoshitaka ; Ohki, Yoshimichi

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 5534-5537

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Ion implantation induces a refractive index increase in silica-based glass, which is mainly due to densification of the glass. The refractive index increase can be used to fabricate optical fiber gratings that are formed with periodic refractive index modulation in the core of an optical fiber. In this article, the generation mechanism of the densification has been investigated through measurements of thickness changes of silica glass induced by proton and He2+ ion implantation. Furthermore, fabrication of the optical fiber grating using the refractive index increase has been demonstrated. From the result, ideal implantation conditions to fabricate the gratings are discussed. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1315616

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4

Digitale Medien

Effect of annealing on Ge-doped SiO2 thin films (1999)

Fujimaki, Makoto ; Shimoto, Shigeyuki ; Miyazaki, Nahoko ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 5270-5273

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Thermal annealing effects on optical and structural properties of Ge-doped SiO2 thin films prepared by the chemical vapor deposition and flame hydrolysis deposition methods were investigated. The thin film prepared by the former method showed inhomogeneous Ge distribution, and Ge oxygen-deficient centers were observed. When it was thermally annealed at temperatures higher than 800 °C, the Ge distribution became uniform. The concentration of oxygen deficient centers was found to decrease with the thermal annealing in an O2 atmosphere, while it increased with the thermal annealing at 1000 °C in N2. This suggests that improvement of the film quality can be achieved by thermal annealing. On the other hand, neither inhomogeneity of Ge distribution nor the appearance of oxygen deficient centers was observed in the film prepared by the latter method, and its film quality was scarcely affected by the thermal annealing. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.371525

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