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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 412-416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects in buried SiO2 films in Si formed by implantation of oxygen ions were characterized by photoluminescence (PL) excited by KrF (5.0 eV) excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.7 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.7 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO2 film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360845
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  • 2
    Electronic Resource
    Electronic Resource
    Point defects in high purity silica induced by high-dose gamma irradiation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1372-1377 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defects induced by high-dose (10 MGy) gamma irradiation (60Co) are studied in various types of high-purity silica glasses [including synthetic crystal (α-quartz)]. While the defects induced by gamma irradiation of up to 1 MGy have been reported to be generated through the bond breaking of manufacturing-method-dependent point defect sites (precursors), such precursor dependency disappears or at least weakens in the defects induced by 10 MGy gamma irradiation. Electron spin resonance, optical absorption, and luminescence investigations suggest that at high-dose irradiation the defects are created mainly by radiolysis or bond breaking, and associated oxygen diffusion occurred at silicon–oxygen bonds other than at point defect sites. Crystalline α-quartz shows much higher radiation resistivity than amorphous silica glasses, suggesting that strained silicon–oxygen bonds are the breaking sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356999
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  • 3
    Electronic Resource
    Electronic Resource
    Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5418-5422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600 °C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (〈3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357196
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  • 4
    Electronic Resource
    Electronic Resource
    Relation between the 1.9 eV luminescence and 4.8 eV absorption bands in high-purity silica glass (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1650-1652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements of the 1.9 eV emission were carried out on high-purity silica glasses subjected to γ-ray irradiation. The time decay of the luminescence, when excited by the 4.8 eV band, indicates that the 4.8 eV absorption and the 1.9 eV luminescence are caused by two different defects, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations shows that both the nonbridging oxygen hole center (responsible for the 1.9 eV luminescence) and another undetermined defect (responsible for the 4.8 eV absorption) must be present in the glass before the 1.9 eV luminescence band can be excited by 4.8 eV photons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101396
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence study of defects in ion-implanted thermal SiO2 films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 842-846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) study was performed on B or P ion-implanted thermal SiO2 films. Two PL bands at 4.3 and 2.6 eV were observed. For the 4.3 eV bands, two PL excitation (PLE) bands were observed at 5.0 and 7.4 eV. Based on the close similarities of the PL and PLE bands to those observed in oxygen-deficient-type bulk silica, the 4.3 and 2.6 eV PL bands are ascribed to the oxygen-deficient-type defects induced by ion implantation. While the 4.3 eV PL band in the bulk SiO2 decays exponentially, the decay of the corresponding PL band in the implanted thermal SiO2 films follows a power low or stretched exponential, suggesting the distribution of PL lifetimes. This suggests that the oxygen-deficient-type defects induced by the ion implantation in thermal SiO2 films are perturbed by the structural distribution of the surrounding Si-O-Si network, including the concentration of PL quenching centers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360274
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  • 6
    Electronic Resource
    Electronic Resource
    Various bonding forms of OH groups in hydrogen-treated silica (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2378-2380 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding state of OH groups in silica glasses is studied by examining infrared absorption spectra and thermal annealing characteristics of γ-induced paramagnetic detect centers. When an oxygen-rich silica is treated by hydrogen, OH groups exist in the form of those hydrogen-bonded with nonbridging oxygen (≡Si–O−--- –H–O–Si≡) besides the forms of H2O and ≡Si–O–H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355295
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  • 7
    Electronic Resource
    Electronic Resource
    Defects and optical absorption bands induced by surplus oxygen in high-purity synthetic silica (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4672-4678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of excess oxygen in as-manufactured and γ-irradiated high-purity synthetic silicas is investigated. Electron-spin-resonance measurements suggest that peroxy radicals ( 3/4 SiOO⋅) could be produced either by the cleavage of peroxy linkages ( 3/4 SiOOSi 3/4 ) or by the reaction of E'centers ( 3/4 Si⋅) with oxygen molecules. The excess oxygen is found to exist in the glass in two forms: as peroxy linkages and as interstitial molecular oxygen. The peroxy linkage is shown to be the cause of optical absorption at 3.8 eV. Heat treatment at 900–1000 °C results in the growth of the 3.8-eV band, that is, the peroxy linkages, through the reaction of oxygen vacancies and interstitial dioxygen molecules. These results indicate that the 5.0- and 3.8-eV bands (which are characteristic of "oxygen-deficient'' and "oxygen-surplus'' silica, respectively) can coexist in a glass, depending on the synthesis conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343242
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  • 8
    Electronic Resource
    Electronic Resource
    Various types of nonbridging oxygen hole center in high-purity silica glass (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1212-1217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption measurements of the 2.0-eV band and photoluminescence measurements of the 1.9-eV emission, excited by various excitation bands, were carried out on high-purity silica glasses subjected to γ-ray irradiation. Two, and possibly three, different forms of nonbridging oxygen hole centers were deconvoluted from the results of the isochronal annealing experiments. The difference in the peak wavelength of the 2.0-eV absorption and 1.9-eV luminescence bands among various forms of nonbridging oxygen hole centers is reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346719
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  • 9
    Electronic Resource
    Electronic Resource
    Spatial distribution of defects in high-purity silica glasses (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1302-1306 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial distribution of defects and impurities in a variety of high-purity silica glass manufactured by different methods are studied. The defects investigated include those found in the as-manufactured glass (oxygen vacancy and peroxy linkage), as well as those induced by ionizing radiation or ultraviolet light (E' center and oxygen hole centers). A significant difference is observed in the distribution between silica manufactured by different methods. Furthermore, the defects induced by ionizing radiation or ultraviolet light have a spatial distribution relative to the geometry of the as-manufactured boule, suggesting that these defects arise primarily from the activation of preexisting precursors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345681
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6746-6750 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When amorphous silicon nitride films are irradiated by a KrF excimer laser, they exhibit broad photoluminescence (PL) centered around 2.4 eV. The PL intensity gradually decreases and the PL peak energy shifts to a lower energy with an increase of the implanted dose of Ar+ ions. This means that the PL consists of two components with peak energies at 2.66 and 2.15 eV and that implantation-induced defects such as vacancies are not the PL centers. The PL intensity is found to decrease if the film was thermally annealed, while the decreased PL intensity of the ion-implanted film recovers by the thermal annealing. Based on these results, it is concluded that the defects generated by hydrogen release or bond breaking act as nonradiative recombination centers that quench the PL. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370188
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