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  • 1
    Electronic Resource
    Electronic Resource
    Bonded silicon-on-sapphire wafers and devices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2526-2527 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-on-sapphire (SOS) has been prepared by direct wafer bonding. The silicon layer was thinned to about 10 μm by mechanical grinding and chemical etching. P-N junction diodes were fabricated in the bonded SOS and compared with epitaxially grown SOS. The reverse bias leakage current was almost 15× less in the bonded SOS. A generation lifetime of 10 μs can be estimated from the junction leakage. The effects of processing temperatures on the bonded SOS were also studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352345
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  • 2
    Electronic Resource
    Electronic Resource
    Compact UHV valve with field replaceable windows : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1282-1284 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: There are many applications in synchrotron radiation research where window valves can be usefully employed. Examples include gas cells for monochromator calibration, filters for high-order light rejection, and as vacuum isolation elements between machine and experimental vacua. Often these devices are fairly expensive, and have only fixed (i.e., nonremovable) windows. The development of a new type of seal technology by VAT for their series 01 valves provides a gate surface which is free from obstructions due to internal mechanical elements. This feature allows a threaded recess to be machined into the gate to receive a removable window frame which can carry standard size Luxel thin-film windows. The combination of these features results in a DN 40 (2.75-in. conflat flange) valve which provides a clear aperture of 21-mm diameter for the window material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143100
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  • 3
    Electronic Resource
    Electronic Resource
    Two-dimensional steady free surface flow into a semi-infinite mat sink (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 10 (1998), S. 2781-2785 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The steady, potential flow of a fluid into a semi-infinite "mat" sink in two dimensions is examined, the mat sink being a region along the flat bottom, where the vertical outflow velocity is specified by −V(x). The fluid possesses a free surface that is drawn right down into the sink. An integral equation technique is employed and solved numerically. Solutions are found for the supercritical case, where the Froude number F〉1, and free surface profiles are presented for two different forms of the outflow velocity profile V(x). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869801
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  • 4
    Electronic Resource
    Electronic Resource
    Flow system and 9.5 GHz microwave resonators for time-resolved and steady-state electron paramagnetic resonance spectroscopy in compressed and supercritical fluids (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2505-2510 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus for the electron paramagnetic resonance (EPR) detection of stable and transient free radicals in pressurized liquids and supercritical fluids is described. The construction of a quartz EPR sample cell capable of withstanding pressures up to 3000 psi (204 atm) and the components of a high pressure flow system are explained and illustrated. In order to accommodate the thick-walled, high pressure sample tube, two X-band (9.5 GHz) microwave cavities were fabricated. One is a brass, cylindrical TE011 cavity for time-resolved (direct detection) EPR experiments where field modulation was not necessary, and the other is a silver wire-wound cylindrical TE011 cavity, mounted in a quartz support tube. The wire-wound cavity allows for simultaneous light excitation and field modulation for steady-state EPR. Both cavities are fitted with tunable end plates to facilitate tuning at X band in the face of large frequency shifts when the sample tube is introduced to the resonator and to allow for operation with smaller sample tubes at ambient pressure. Microwave coupling, flow optimization, and UV-light access for both cavities are described, and sample spectra in both time-resolved and steady-state modes are reported. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148149
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  • 5
    Electronic Resource
    Electronic Resource
    A fast 35-GHz time-resolved EPR apparatus (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 397-402 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A time-resolved Q-band (35-GHz) electron paramagnetic resonance (EPR) apparatus with a 25-ns rise time and 10-ns time resolution is described. Built around the Varian E110 microwave bridge, a detailed description of the resonator, flow system, optical alignment, and preamplifier electronics is given. The resonator is a TE103 rectangular cavity with front and back cutoff flanges attached to allow maximum laser light access. An adjustable Gordon coupler was constructed to achieve critical coupling to the cavity. Two separate designs of quartz sample flow cell are described, one for low dielectric organic solvents and one for aqueous samples. The standard diode detection system as shipped by Varian was used, but the signal from the detector diode was branched into two separate amplifiers, one the standard preamplifier for automatic frequency control lock-in operation, the other based on a Comlinear op-amp which gave fast rise times (9 ns) before the signal was trapped by a boxcar signal averager. Test systems clearly showed that the instrument response is no longer limited by the quality factor of the cavity but by the laser pulse width and jitter. Strong, spin-polarized EPR signals from the photolysis of dimethoxyphenylacetophenone, which were well separated due to their large g-factor difference, were distinguished at sampling delay times as early as 10 ns after the laser flash producing the radicals. A sensitivity comparison to X-band is made using the acetone/2-propanol system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144208
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  • 6
    Electronic Resource
    Electronic Resource
    Ion implantation damage in Al0.6Ga0.4As/GaAs heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 97-103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage produced at the interfaces in a sample of GaAs/Al0.6Ga0.4As/GaAs that has been subjected to ion implantation at 77 and 293 K with 1 MeV Kr+ ions has been investigated using a combination of ion channeling and transmission electron microscopy (TEM) techniques. Low temperature ion-channeling spectra obtained from samples implanted at 77 K, to an ion dose of 1014 ions cm−2, were similar to the random spectrum, indicating that the GaAs and Al0.6Ga0.4As layers had sustained a considerable degree of damage. An asymmetric signal developed in the He+ ion-channeling spectrum as the sample warmed to room temperature. The backscattering yield corresponding to the bottom interface (i.e., Al0.6Ga0.4As grown on GaAs) resembled that of the random yield, whereas that from the top interface (GaAs grown on Al0.6Ga0.4As) decreased, shifting toward the unirradiated channeled spectrum. This observation suggests that the damage produced near the top of the Al0.6Ga0.4As layer is thermally unstable. Cross-sectional TEM images reveal a greater amount of damage in the form of extended defects and amorphous regions at the bottom interface than at the top one. This difference is sufficient to account for the observed asymmetry in the channeling spectra. Increasing the ion dose to 1015 ions cm−2 produced a damage state throughout the Al0.6Ga0.4As layer that was stable at both 77 and 293 K. TEM examination revealed that at this ion dose the GaAs and Al0.6Ga0.4As layers were both amorphous. Room-temperature implantation to a dose of 1×1016 ions cm−2 was also performed. Planar defects were observed at both interfaces, although their density appeared to be greater near the bottom interface.In addition, the bottom interface was rougher than the top. The difference in the damage states at the bottom and top interfaces can be attributed to a variation in the number of displacement cascade events as a function of depth through the Al0.6Ga0.4As layer. This variation in the number of cascades results in different amounts of ion mixing at the top and bottom interfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360586
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  • 7
    Electronic Resource
    Electronic Resource
    Depth dependence of ion implantation damage in AlxGa1−xAs/GaAs heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4366-4371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To determine the influence of interface type on the accumulation of damage and ion mixing in GaAs/AlxGa1−xAs heterostructures, the damage produced by ion implantation at 77 K in single-layer (GaAs/AlxGa1−xAs/GaAs) and double-layer (GaAs/AlxGa1−xAs/GaAs/ AlxGa1−xAs/GaAs) heterostructures has been investigated by using a combination of Rutherford backscattering spectrometry and transmission electron microscopy. In the single-layer geometry, the degree of disorder increases with depth and the mixing is greater at the AlxGa1−xAs on GaAs interface than at the GaAs on AlxGa1−xAs one. The damage distribution in the sample with the double-layer geometry was different in the two layers, but overall it was similar to that in the single-layer geometry. These trends were observed in samples with x=0.6 and 0.2. These results indicate that migration of charged defects due to the presence of an implantation-induced electric field is not responsible for the asymmetry in the damage accumulation across the layer, the interface disorder and ion mixing, and the initiation of amorphization at interfaces. Instead, these effects can be better understood in terms of the depth dependence of the density of cascade events. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363395
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of ion-beam mixing in III–V semiconductors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3543-3545 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam mixing in AlxGa1−xAs and InP matrices was measured as a function of irradiation temperature using 1 MeV Kr ion irradiation. For these III–V compound semiconductors, the mixing increased with temperature up to a critical temperature Tc at which point it precipitously dropped. Tc was identified as the amorphous-to-crystalline transition temperature in these materials under 1 MeV Kr irradiation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358583
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  • 9
    Electronic Resource
    Electronic Resource
    Monolayer epitaxy of GaAs at 650 °C by metal–organic chemical-vapor deposition with surface photoabsorption monitoring (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4209-4211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report monolayer-by-monolayer epitaxy of GaAs at 650 °C using surface photoabsorption (SPA) to monitor growth. Our results show, as confirmed by photoluminescence measurements, the possibility of growing highly accurate quantum well heterostructures by metal–organic chemical-vapor deposition at conventional growth temperatures. In addition, we observe a continuous increase of the SPA signal during trimethylgallium exposure that cannot be explained by present growth models. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116988
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  • 10
    Electronic Resource
    Electronic Resource
    Metallization to asymmetric cladding separate confinement heterostructure lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3847-3849 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealed and nonannealed p-contact metallization for asymmetric cladding separate confinement heterostructure lasers with a thin p-cladding layer is reported. Ti–Au and annealed Ti–Pt–Au p-type contacts are demonstrated to improve the adhesion over a pure gold contact and allow annealing of the metallization to thin p-cladding laser structures at the expense of an increase in the optical loss. The increased optical loss is due to the decreased conductivity of titanium and platinum as compared to gold. As little as 10 A(ring) of titanium is adequate for an adhesion layer and only increases the optical loss by 1.6 cm −1 over a pure gold metallization which has an optical loss of 10.0 cm−1. A metallization of 15 A(ring) Ti−15 A(ring) Pt−1500 A(ring) Au is adequate for an anneal at 410 °C for 10 s and increases the optical loss by 7.0 cm −1. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115293
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