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  • 1
    Series available for loan
    Series available for loan
    Geological Survey of Canada radiocarbon dates XI (1971)
    Ottawa : Geological Survey of Canada
    Associated volumes
    Details Availability
    Call number: SR 90.0008(71-7)
    In: Paper
    Type of Medium: Series available for loan
    Pages: S. 255-324
    Series Statement: Paper / Geological Survey of Canada 71-7
    Language: English
    Location: Lower compact magazine
    Branch Library: GFZ Library
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  • 2
    Series available for loan
    Series available for loan
    Geological Survey of Canada radiocarbon dates XVII (1977)
    Ottawa : Geological Survey of Canada
    Associated volumes
    Details Availability
    Call number: SR 90.0008(77-7)
    In: Paper
    Type of Medium: Series available for loan
    Pages: 25 S.
    ISBN: 0660015285
    Series Statement: Paper / Geological Survey of Canada 77-7
    Language: English
    Location: Lower compact magazine
    Branch Library: GFZ Library
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of single-crystal metastable (GaAs)1−x(Si2)x alloys on GaAs and (GaAs)1−x(Si2)x/GaAs strained-layer superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2649-2651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial zinc blende structure metastable (GaAs)1−x(Si2)x alloys have been grown with 0〈x〈0.3 on As-stabilized GaAs(100) substrates by a hybrid sputter deposition/evaporation technique. The films, typically 2–3 μm thick, were deposited at 570 °C with growth rates between 0.7 and 1 μm h−1. Alloys with 0〈x〈0.12 were defect-free as judged by plan-view and cross-sectional transmission electron microscopy (TEM and XTEM) with x-ray diffraction peak widths approximately the same as that of the substrate, 30 arcsec 2θ. XTEM lattice images showed smooth abrupt interfaces. (GaAs)1−x(Si2)x alloys with x〉0.12 exhibited increasing evidence of interfacial defects associated with lattice strain when grown on GaAs. However, defect-free alloys with x up to 0.3 were obtained using (GaAs)1−x(Si2)x/GaAs strained-layer superlattice buffer layers to provide a better lattice match.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102300
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  • 4
    Electronic Resource
    Electronic Resource
    Electron-beam-induced crystallization of isolated amorphous regions in Si, Ge, GaP, and GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 974-982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An energetic electron beam has been used to stimulate crystallization of spatially isolated amorphous regions in Si, Ge, GaP, and GaAs at 30 and 300 K. In the four materials it was found that crystallization was induced even when the energy of the electron beam was less than that required to create point defects in the crystalline structure. The rate of crystallization depended on the material and on the electron energy. In all materials, the rate decreases as the electron energy increases from 50 keV (the lowest electron energy used), reaching a minimum value at an electron energy slightly below the displacement threshold voltage. Above the displacement threshold, the regrowth rate again increases with increasing electron energy. The possible role of electron-beam heating was studied both theoretically and experimentally. Calculations suggested heating effects were negligible and this was confirmed by in situ ion implantations and electron irradiations performed at 30 K, where subthreshold electrons stimulated crystallization. The subthreshold and low-temperature results are consistent with the model that the crystallization process is dependent on the creation of defects (dangling bonds and kinks) at the crystalline-amorphous (c-a) interface. The crystallization stimulated by the subthreshold electron beams suggests that electronic excitation of the bonds along the c-a interface can induce the amorphous to crystalline transition. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360764
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  • 5
    Electronic Resource
    Electronic Resource
    Ion implantation damage in Al0.6Ga0.4As/GaAs heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 97-103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage produced at the interfaces in a sample of GaAs/Al0.6Ga0.4As/GaAs that has been subjected to ion implantation at 77 and 293 K with 1 MeV Kr+ ions has been investigated using a combination of ion channeling and transmission electron microscopy (TEM) techniques. Low temperature ion-channeling spectra obtained from samples implanted at 77 K, to an ion dose of 1014 ions cm−2, were similar to the random spectrum, indicating that the GaAs and Al0.6Ga0.4As layers had sustained a considerable degree of damage. An asymmetric signal developed in the He+ ion-channeling spectrum as the sample warmed to room temperature. The backscattering yield corresponding to the bottom interface (i.e., Al0.6Ga0.4As grown on GaAs) resembled that of the random yield, whereas that from the top interface (GaAs grown on Al0.6Ga0.4As) decreased, shifting toward the unirradiated channeled spectrum. This observation suggests that the damage produced near the top of the Al0.6Ga0.4As layer is thermally unstable. Cross-sectional TEM images reveal a greater amount of damage in the form of extended defects and amorphous regions at the bottom interface than at the top one. This difference is sufficient to account for the observed asymmetry in the channeling spectra. Increasing the ion dose to 1015 ions cm−2 produced a damage state throughout the Al0.6Ga0.4As layer that was stable at both 77 and 293 K. TEM examination revealed that at this ion dose the GaAs and Al0.6Ga0.4As layers were both amorphous. Room-temperature implantation to a dose of 1×1016 ions cm−2 was also performed. Planar defects were observed at both interfaces, although their density appeared to be greater near the bottom interface.In addition, the bottom interface was rougher than the top. The difference in the damage states at the bottom and top interfaces can be attributed to a variation in the number of displacement cascade events as a function of depth through the Al0.6Ga0.4As layer. This variation in the number of cascades results in different amounts of ion mixing at the top and bottom interfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360586
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  • 6
    Electronic Resource
    Electronic Resource
    A comparison of the amorphization induced in AlxGa1−xAs and GaAs by heavy-ion irradiation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1287-1293 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The response of AlxGa1−xAs/GaAs samples to bombardment with heavy ions (50 keV Kr+, 50 keV and 1.5 MeV Xe+) was studied as a function of ion dose at temperatures of 30 and 300 K using transmission electron microscopy. Samples with x=0.2 and 0.85 were used. Under all irradiation temperature and ion combinations, the AlGaAs was more resistant to amorphization than GaAs. The resistance increased with increasing Al content and decreased with decreasing irradiation temperature. This difference in the response may be attributed to differences either in the mechanisms by which a region is rendered amorphous (i.e., by direct impact amorphization or by the buildup of point defects) or to differences in the inherent stability (recrystallization temperature and rate) of individual amorphous zones in AlGaAs and GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347262
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  • 7
    Electronic Resource
    Electronic Resource
    An environmental cell transmission electron microscope (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1438-1444 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An aperture-limited, differentially pumped environmental cell has been developed and installed in a JEOL 4000 EX electron microscope. With this environmental cell it is possible to observe, at high spatial resolution, the detailed changes in microstructure that occur during the interaction between a solid and a gaseous environment. The cell has been pressurized to 70 Torr with H2 gas for several hours with no adverse effects on the microscope performance. While the initial tests have been performed with hydrogen gas, the materials used to construct the environmental cell can tolerate corrosive environments. The key features of the environmental cell design along with the results from some applications are presented in this paper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142464
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  • 8
    Electronic Resource
    Electronic Resource
    Production of amorphous zones in GaAs by the direct impact of energetic heavy ions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 49-56 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage produced in GaAs by implantation with low energy heavy ions has been studied as a function of ion mass and implantation temperature (30 and 300 K). The experiments were performed in situ in the microscope-accelerator facility at Argonne National Laboratory. In samples implanted and examined at 30 K, spatially isolated amorphous regions were produced by the direct impact of 50 keV Ar, Kr, and Xe ions. The probability that the impact of an individual ion formed an amorphous zone increased as the ion mass increased from Ar to Kr but not from Kr to Xe. The average dimension of the amorphous zones also increased with ion mass, being greater for the Xe than for the Kr ion implantation. On warming to room temperature, the amorphous zones decreased in size and density as the sample temperature was increased above 200 K. In samples implanted and examined at 300 K, the probability of forming an amorphous zone by direct impact increased as the ion mass increased from Kr to Xe, although the probability was always less than at 30 K. The density of amorphous zones produced at 300 K was similar to that remaining in a sample implanted at 30 K and then warmed to room temperature. With time at 300 K the amorphous zones decreased in size and eventually crystallized completely, leaving no trace of their prior existence. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371825
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  • 9
    Electronic Resource
    Electronic Resource
    On the amorphization process in Al0.6Ga0.4As/GaAs heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2539-2547 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphization mechanism operative in Al0.6Ga0.4As/GaAs structures has been studied by using ion implantation at 77 K with different ion masses (Kr and Ar) and energies (1–3 MeV). The damage produced by these implantations was examined by using a combination of ion channeling and cross-sectional transmission electron microscopy. For all implantation conditions, the damage accumulation produced by implantation at 77 K increases with depth into the Al0.6Ga0.4As layer. Neither point defects nor energetically dense cascade events by themselves were found to be sufficient to drive Al0.6Ga0.4As amorphous at 77 K. Amorphization occurred only when a high density of energetically dense cascade events were superimposed on a high total defect population. These conditions were satisfied deep in the layer and only for the 1.5 MeV Kr ion implantation. With the exception of the amorphous material, the damage structure produced at 77 K recovered on warming to room temperature. The recovered structure consisted of dislocation loops or planar defects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366630
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  • 10
    Electronic Resource
    Electronic Resource
    Depth dependence of ion implantation damage in AlxGa1−xAs/GaAs heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4366-4371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To determine the influence of interface type on the accumulation of damage and ion mixing in GaAs/AlxGa1−xAs heterostructures, the damage produced by ion implantation at 77 K in single-layer (GaAs/AlxGa1−xAs/GaAs) and double-layer (GaAs/AlxGa1−xAs/GaAs/ AlxGa1−xAs/GaAs) heterostructures has been investigated by using a combination of Rutherford backscattering spectrometry and transmission electron microscopy. In the single-layer geometry, the degree of disorder increases with depth and the mixing is greater at the AlxGa1−xAs on GaAs interface than at the GaAs on AlxGa1−xAs one. The damage distribution in the sample with the double-layer geometry was different in the two layers, but overall it was similar to that in the single-layer geometry. These trends were observed in samples with x=0.6 and 0.2. These results indicate that migration of charged defects due to the presence of an implantation-induced electric field is not responsible for the asymmetry in the damage accumulation across the layer, the interface disorder and ion mixing, and the initiation of amorphization at interfaces. Instead, these effects can be better understood in terms of the depth dependence of the density of cascade events. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363395
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