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  • 1
    Electronic Resource
    Electronic Resource
    Comment on "Mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity" [J. Appl. Phys. 89, 332 (2001)] (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2621-2622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a recent article [S. Z. Karazhanov, J. Appl. Phys. 89, 332 (2001)], Karazhanov proposed a single-level recombination model as an explanation for the anomalous dependence of the carrier lifetime on injection level observed in cast multicrystalline silicon. This approach contrasts with previous models which involved the use of two distinct levels, one causing recombination and the other only trapping. The purpose of this Comment is to outline some critical considerations which suggest that only a two-level (or indeed a multilevel) model can satisfactorily explain the experimental observations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390306
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  • 2
    Electronic Resource
    Electronic Resource
    Isomorphism of 2-methylnaphthalene and 2-halonaphthalenes as a revealer of a special interaction between methyl and halogen (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 4841-4846 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The systems 2-methylnaphthalene+2-chloronaphthalene and 2-methylnaphthalene+2-bromonaphthalene belong to the exceptional group of binary systems where the formation of mixed crystals goes together with a solid–liquid phase diagram with a maximum. For these systems a thermodynamic analysis is presented which is based on new phase diagram and thermochemical data. The excess Gibbs energies, excess enthalpies, and excess entropies of the mixed crystalline state all are negative. These properties correspond to a net attraction between methyl and substituted halogen. Additional evidence of such an attraction is given by the outcome of a statistical search on intermolecular contacts, in the crystalline state of pure substances, among methyl+halogen, halogen+halogen, and methyl+methyl. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478370
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  • 3
    Electronic Resource
    Electronic Resource
    Steady streaming in oscillatory viscous flow under a transverse magnetic field (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 9 (1997), S. 1430-1434 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we deal with the oscillatory laminar boundary layer flow of an electrically conducting fluid near an insulating solid body under a transverse, uniform magnetic field. It is assumed that the two-dimensional flow is produced by an external stream velocity which varies periodically and that the magnetic field induced in the fluid can be neglected. The solution of the boundary layer equations is found by an expansion on the small parameter ε (the inverse of the Strouhal number). Both the primary oscillatory flow and the secondary flow which is composed of an oscillatory motion and a steady contribution, i.e. the steady streaming, are analytically determined. The magnetohydrodynamic (MHD) flow correctly reduces to the hydrodynamic limit when the magnetic field vanishes. However, differently from the hydrodynamic case, the MHD second order steady solution satisfies the vanishing of the steady streaming motion as the distance from the body tends to infinity. This result is a consequence of the suppression of the only vorticity component, which is perpendicular to the magnetic field. Further, when the magnetic interaction parameter is sufficiently high, the streaming motion can be completely suppressed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869255
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  • 4
    Electronic Resource
    Electronic Resource
    Interaction of Stokes boundary layer flow with a sound wave (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 13 (2001), S. 3709-3713 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the interaction of a standing sound wave with the flow generated by the oscillation of a plate in its own plane (Stokes second problem). The sound wave acts in the direction transverse to the plate and it is considered that the plate oscillation and the sound wave have the same frequency but a nonzero relative phase. The sound wave induces a modification of the axial velocity that consists of two parts, an oscillation with twice the frequency of the plate oscillation and a steady streaming that persists beyond the Stokes boundary layer, resulting in a double boundary layer structure. This mechanism for generating steady streaming differs from those studied previously in the literature. The relative phase of the two oscillatory motions determines the direction of the net flow. The direction of the steady streaming far away from the plate, coincides with the direction of the displacement of the plate at the moment of maximum compression and is proportional to the velocity of the plate at this moment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415425
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  • 5
    Electronic Resource
    Electronic Resource
    In situ measurement of the rate of H absorption by a Pd cathode during the electrolysis of aqueous solutions (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1324-1330 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An experimental setup to measure "in situ" the amount of H that a Pd cathode absorbs during the electrolysis of aqueous solutions has been built up and tested. The setup implements a volumetric technique, i.e., it involves the measurement of the rate of H2 generation by the cathode. The pros and cons of this type of techniques against other procedures, the measurement of the variation of the cathode electrical resistance or of its dilation during the electrolysis, are briefly discussed. A careful analysis of the setup error sources is done by using two non-H-absorbing Pt electrodes. Neither any significant recombination of the electrolysis gases (H2 and O2), nor any deviation of a 100% electrolysis efficiency have been observed. It has been found that gas (air) release and H2 and O2 absorption by the solution, in the first stage of the electrolysis, seriously affect the measurement of the rate of H absorption by the cathode. Several improvements of the experimental installation and an operation protocol of saturation of H2 and O2 and of exhaustion of air in the solution, before starting the electrolysis, allowed overcoming those limitations. Finally, we present the results obtained in the measurement of the rate of H uptake by a Pd cathode during electrolysis. The reliability of the measurement has been confirmed by electrochemically deloading the Pd cathode. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147901
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  • 6
    Electronic Resource
    Electronic Resource
    Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3175-3180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to study the electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p-type Cz silicon wafers of various resistivities (1–31 Ω cm) prior to and after light degradation. The measurement technique used is the contactless quasi-steady-state photoconductance method, allowing carrier lifetime measurements over a very broad injection range between 1012 and 1017 cm−3. To eliminate all recombination channels not related to the degradation effect, the difference of the inverse lifetimes measured after and before light degradation is evaluated. A detailed analysis of the injection level dependence of the carrier lifetime change using the Shockley–Read–Hall theory shows that the fundamental recombination center created during illumination has an energy level between Ev+0.35 and Ec−0.45 eV and an electron/hole capture time constant ratio between 0.1 and 0.2. This deep-level center is observed in all samples and is attributed to a new type of boron–oxygen complex. Besides this fundamental defect, in some samples an additional shallow-level recombination center at 0.15 eV below Ec or above Ev is found to be activated during light exposure. This second center dominates the light-degraded carrier lifetime only under high-injection conditions and is hence only of minor importance for low-injection operated devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371186
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  • 7
    Electronic Resource
    Electronic Resource
    Capture cross sections of the acceptor level of iron–boron pairs in p-type silicon by injection-level dependent lifetime measurements (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7932-7939 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Injection-level dependent recombination lifetime measurements of iron-diffused, boron-doped silicon wafers of different resistivities are used to determine the electron and hole capture cross sections of the acceptor level of iron–boron pairs in silicon. The relative populations of iron–boron pairs and interstitial iron were varied by exposing the samples to different levels of illumination prior to lifetime measurements. The components of the effective lifetime due to interstitial iron and iron–boron pairs were then modeled with Shockley–Read–Hall statistics. By forcing the sum of the modeled iron–boron and interstitial iron concentrations to equal the implanted iron dose, in conjunction with the strong dependence of the shape of the lifetime curves on dopant density, the electron and hole capture cross sections of the acceptor level of iron–boron pairs have been determined as (3±2)×10−14 cm−2 and (2±1)×10−15 cm−2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372156
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  • 8
    Electronic Resource
    Electronic Resource
    Preparation of highly overstoichiometric LaNi5+x (1≤x≤4) single-phase films by ion beam sputtering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6690-6696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-phase LaNi6.1 and LaNi9.2 films with hexagonal TbCu7 structure have been successfully obtained. Films in the micron scale range were deposited by ion beam sputtering on sapphire and glass substrates heated at 600 K. A two-material La–Ni mosaic target was used for this purpose. X-ray diffraction and transmission electron microscopy investigations show that the lattice parameters of the hexagonal structure follow a linear dependence for Ni concentration. This result relates to a random substitution of La atoms for Ni dumbbell pairs in the ordered CaCu5 structure. The films exhibit a strong preferential orientation, with the c axis parallel to the substrate plane, which seems to be favored by the presence of Ni dumbbell pairs. The expected impact of this phase on the preparation of new hydrogen storage materials is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371745
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of additives on the structure and magnetic properties of 1:7 type Sm2Fe15Ga2C3 permanent magnets (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6618-6622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of M(M=Zr, Cu, Nb) additives on the stability and magnetic properties of melt-spun nanocrystalline Sm2Fe15Ga2C3 ribbons with the 1:7-type structure has been investigated. The addition of 1 at. % of Zr or Nb was found to improve the thermal stability significantly, but the addition of Cu was found to decrease the thermal stability of the 1:7 metastable phase. After an appropriate heat treatment, M (Zr, Nb, or Cu)-containing samples exhibit better hard magnetic properties than the M-free sample. The intrinsic coercivity and maximum energy product were found to increase from 3.6 kOe and 59 kJ/m3 for the M-free sample to 4.8 kOe and 88 kJ/m3 for the Zr-containing one. The exchange interaction between the grains or the "exchange spring" behavior is studied according the Kneller and Hawig model and Henkel's plot. The enhancements of magnetic properties originate from the improvement of the intrinsic magnetic properties as well as the refinement of the microstructure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289796
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  • 10
    Electronic Resource
    Electronic Resource
    Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3821-3826 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emitter saturation current density (JOe) and surface recombination velocity (Sp) of various high quality passivation schemes on phosphorus-diffused solar cell emitters have been determined and compared. The passivation schemes investigated were (i) stoichiometric plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiN), (ii) forming gas annealed thermally grown silicon oxide, and (iii) aluminum annealed (alnealed) thermal silicon oxide. Emitters with sheet resistances ranging from 30 to 430 and 50 to 380 Ω/(square, open) were investigated for planar and random-pyramid textured silicon surfaces, which covers both industrial and laboratory emitters. The electronic surface passivation quality provided by PECVD SiN films was found to be good, with Sp values ranging from 1400 to 25 000 cm/s for planar emitters. Thin thermal silicon oxides were found to provide superior passivation to PECVD SiN, with the best passivation provided by an alnealed thin oxide (Sp values between 250 and 21 000 cm/s). The optimized PECVD SiN films are, nevertheless, sufficiently good for most silicon solar cell applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350633
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