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  • 1
    Electronic Resource
    Electronic Resource
    Light-Induced Degradation in Crystalline Silicon Solar Cells (2003)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 95-96 (Sept. 2003), p. 187-196 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.95-96.187.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Understanding and Reducing the Boron-Oxygen-Related Performance Degradation in Czochralski Silicon Solar Cells (2003)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 95-96 (Sept. 2003), p. 223-228 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.95-96.223.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Spectral diffusion of individual pentacene, terrylene, and dibenzanthanthrene molecules in n-tetradecane (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 6843-6850 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The spectral stability of three guest molecules embedded in a quickly frozen n-tetradecane matrix has been investigated on a single-molecular level at liquid-helium temperature. In total, about 2500 spectral trajectories of 476 terrylene molecules, 328 dibenzanthanthrene molecules, and 252 pentacene molecules were recorded. Both line broadening and spectral jumps are analyzed and the latter are found to be mainly light induced. The spectral changes in essence reflect the dynamics of the host matrix and the differences between the guest molecules may be reduced to differences in their pumping cycles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357803
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  • 4
    Electronic Resource
    Electronic Resource
    Solvation effects adjacent to the reaction site. Differences in solvation between alkyl, alkenyl or alkynyl, and aryl groups in binary aqueous mixtures (1992)
    s.l. : American Chemical Society
    The @journal of organic chemistry 57 (1992), S. 2387-2392 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00034a035
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  • 5
    Electronic Resource
    Electronic Resource
    Injection level dependence of the defect-related carrier lifetime in light-degraded boron-doped Czochralski silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2167-2169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier recombination lifetime in light-degraded boron-doped 1 Ω cm Czochralski-grown silicon wafers is measured as a function of the bulk excess carrier concentration Δn. The measurements are performed with the quasi-steady state photoconductance method and cover a large injection level range between 1013 and 1.5×1017 cm−3. We observe a very strong increase of the carrier lifetime in the Δn range between 1014 and 2×1016 cm−3, which is attributed to boron–oxygen (BiOi) defect pairs. The observed strong increase of the defect-related carrier lifetime allows us to determine the previously unknown hole capture cross section σp of the BiOi pair. Our analysis gives a σp value of (0.45–1.2)×10−15 cm2, which is 2–3 orders of magnitude smaller than the corresponding electron capture cross section. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122411
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  • 6
    Electronic Resource
    Electronic Resource
    On the data analysis of light-biased photoconductance decay measurements (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1491-1496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of bias light is common practice today in photoconductance decay (PCD) measurements to analyze semiconductor samples with injection-level dependent recombination parameters (i.e., surface recombination velocity and/or bulk lifetime). Recently, it has been shown on theoretical grounds that the previously reported recombination parameters from light-biased PCD experiments are not the actual properties of the investigated sample, but so-called differential recombination parameters [R. Brendel, Appl. Phys. A 60, 523 (1995)]. In the present article the theory relevant to light-biased PCD measurements is discussed in detail and subsequently applied to monocrystalline silicon wafers with nitride and oxide passivated surfaces in order to verify the deviations between the differential and actual surface recombination velocities. Special emphasis is paid to the experimental fact that the injection level cannot be reduced below a minimum value due to signal-to-noise problems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360990
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  • 7
    Electronic Resource
    Electronic Resource
    Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3175-3180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to study the electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p-type Cz silicon wafers of various resistivities (1–31 Ω cm) prior to and after light degradation. The measurement technique used is the contactless quasi-steady-state photoconductance method, allowing carrier lifetime measurements over a very broad injection range between 1012 and 1017 cm−3. To eliminate all recombination channels not related to the degradation effect, the difference of the inverse lifetimes measured after and before light degradation is evaluated. A detailed analysis of the injection level dependence of the carrier lifetime change using the Shockley–Read–Hall theory shows that the fundamental recombination center created during illumination has an energy level between Ev+0.35 and Ec−0.45 eV and an electron/hole capture time constant ratio between 0.1 and 0.2. This deep-level center is observed in all samples and is attributed to a new type of boron–oxygen complex. Besides this fundamental defect, in some samples an additional shallow-level recombination center at 0.15 eV below Ec or above Ev is found to be activated during light exposure. This second center dominates the light-degraded carrier lifetime only under high-injection conditions and is hence only of minor importance for low-injection operated devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371186
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  • 8
    Electronic Resource
    Electronic Resource
    Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1494-1497 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band-to-band Auger recombination in crystalline silicon is investigated by means of quasi-steady-state photoconductance measurements under intermediate- and high-injection conditions. The measurements reveal that the correlation of the charge carriers via Coulombic interaction has to be taken into account to accurately model the observed injection level and doping concentration dependence of the Auger recombination lifetime. A semi-empirical Coulomb-enhanced Auger recombination model is applied in order to simulate the experimental results theoretically. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373878
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  • 9
    Electronic Resource
    Electronic Resource
    Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3626-3633 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the light-biased microwave-detected photoconductance decay method, injection level dependent measurements of the effective surface recombination velocity Seff at silicon surfaces passivated by plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) films are performed on monocrystalline silicon wafers of different resistivities and doping types. In order to theoretically simulate the measured dependences of Seff on the bulk injection level Δn, the extended Shockley-Read-Hall formalism is used. Simulation input parameters are the energy dependent interface state densities and capture cross sections of the involved interface defects as well as the positive insulator charge density Qf. The energy dependent properties of the interface defects are experimentally determined by means of small-pulse deep-level transient spectroscopy. These measurements reveal the existence of three "deep" silicon dangling bond defects at the Si-SiNx interface with similar interface state densities but very different capture cross sections and hence recombination rates. Another defect is found very close (≤0.1 eV) to the edge of the silicon conduction band. This defect is identified with the K+ center which is responsible for the large positive Qf values (∼1012 cm−2) at Si-SiNx interfaces obtained from standard dark capacitance-voltage measurements. In order to get a good agreement between measured and calculated Seff(Δn) dependences, a reduction of Qf by one order of magnitude is found to be necessary. The explanation for this reduction is the capture of electrons from the silicon conduction band into the K+ centers. The comparison of Si-SiNx interfaces fabricated by different PECVD techniques shows that the dominant interface defect is produced by the ion bombardment during the SiNx deposition. Thus, avoidance of the ion bombardment leads to a strongly reduced interface recombination and hence a better surface passivation quality. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369725
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  • 10
    Electronic Resource
    Electronic Resource
    Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6186-6199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An accurate method for the determination of the bulk minority-carrier recombination lifetime of crystalline silicon wafers of typical thickness (〈0.5 mm) is presented. The method consists of two main steps: first, both wafer surfaces are passivated with silicon nitride films fabricated at low temperature (〈400 °C) in a remote plasma-enhanced chemical vapor deposition system. Second, the effective minority-carrier lifetime of the wafer is measured by means of the contactless microwave-detected photoconductance decay technique. Due to the outstanding degree of surface passivation provided by remote-plasma silicon nitride films, the bulk minority-carrier lifetime can be very accurately determined from the measured effective minority-carrier lifetime. The method is suited for the bulk minority-carrier lifetime determination of p-type and n-type silicon wafers with doping concentrations in the 1014–1017 cm-3 range. We demonstrate the potential of the method for commercially available float-zone, Czochralski, and multicrystalline silicon wafers of standard thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364403
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