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  • 1
    Electronic Resource
    Electronic Resource
    Fast turbulent correlations from phase coherence velocimetry (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1831-1832 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Flows with coherent structures allow see-free measurements of local velocity and velocity fluctuations. Continuous turbulent velocity histories in ionizing shock waves are obtained at a 10-MHz sampling rate. From this, correlation profiles and frequency spectra are determined which reveal the presence of prominent high-frequency components.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138103
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Tunable microwigglers for free-electron lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1299-1301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the design, construction, and test results of a novel microwiggler structure with a periodicity of 2.4 mm for free-electron laser applications. The experimentally demonstrated tunability of field amplitude provides versatile means for field tapering, optical klystron configurations, improving field uniformity, and electron beam matching at the wiggler entrance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100699
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence study of gallium antimonide grown by liquid-phase epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 350-353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low carrier concentrations of undoped p-type and Te-doped n-type GaSb epilayers have been grown on (100)-oriented Te-doped GaSb substrates by liquid-phase epitaxy with supersaturation and undersaturation techniques, respectively. The net carrier concentrations of undoped and Te-doped layers obtained by C-V measurement can be as low as NA −ND =8×1015 cm−3 and ND −NA =1016 cm−3 , respectively. These GaSb-grown layers were characterized by photoluminescence (PL) measurement. The native neutral acceptor transitions appear at 778.2 meV for undoped layers and 777.2 meV for Te-doped layers. The ionization energy for the Te donor in GaSb was determined to be 3.6 meV below the bottom of conduction band at 18 K. The relation between the energy gap of GaSb and temperature was obtained by PL measurement at various temperatures. The spin-orbit splitting of the valence band was measured to be 0.798 eV at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343880
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  • 4
    Electronic Resource
    Electronic Resource
    Photoreflectance study of the surface state density and distribution function of InAlAs (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 396-400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance is used to investigate the band gap, built-in electric field, and surface Fermi level of a series of lattice-matched In0.52Al0.48As surface-intrinsic n+ structures having different undoped layer thicknesses. Experimental results indicate that, although the built-in electric field depends on the undoped layer thickness, there is a range of thickness within which the surface Fermi level is weakly pinned. From the dependence of electric field and surface Fermi level on the undoped layer thickness, we can determine that the surface states distribute over two separate regions within the energy band gap. The densities of the surface states are evaluated as well. Moreover, the dependence of the built-in electric field on undoped layer thickness is converted into the dependence of surface state density on the surface Fermi level in order to theoretically and exactly calculate the energy spectrum of the surface state density using a Guassian distribution function. The center and width of the distribution near the conduction band are obtained from the fitting parameters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324682
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  • 5
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    Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-09-22
    Description: Single crystal ferromagnetic Fe 3 Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe 3 Si/GaAs(111) yielded a saturation moment of 990 emu/cm 3 with a small coercive field ≤1 Oe at room temperature.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    Note: Optimized circuit for excitation and detection with one pair of electrodes for improved Fourier transform ion cyclotron resonance mass spectrometry (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-06-18
    Description: A conventional Fourier transform-Ion Cyclotron Resonance (ICR) detection cell is azimuthally divided into four equal sections. One pair of opposed electrodes is used for ion cyclotron excitation, and the other pair for ion image charge detection. In this work, we demonstrate that an appropriate electrical circuit facilitates excitation and detection on one pair of opposed electrodes. The new scheme can be used to minimize the number of electrically independent ICR cell electrodes and/or improve the electrode geometry for simultaneously increased ICR signal magnitude and optimal post-excitation radius, which results in higher signal-to-noise ratio and decreased space-charge effects.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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