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  • American Institute of Physics (AIP)  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Codiffusion of arsenic and boron implanted in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2400-2406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The codiffusion of As and B implanted in Si at high doses (1×1016 cm−2) and with energies corresponding to the same projected range has been investigated at 900 and 1000 °C on the basis of dopant and carrier profile measurements. The comparison of the codiffusion data with the corresponding ones obtained by the diffusion of each element alone revealed some anomalous effects which can be explained by assuming the formation of neutral donor–acceptor pairs. These complexes are mobile with a diffusion coefficient Dpair=17 exp(−4/kT) cm2/s, very close to the diffusion coefficient of As in intrinsic Si. Electrons are the majority carriers in the region where both dopants are present at high densities. On the basis of these features, a diffusion model that takes pairing into account is presented. A simulation program including this model allows one to foresee the anomalous phenomena occurring in the high-concentration codiffusion of donors and acceptors in Si and in general shows a good agreement with experimental profiles. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358765
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  • 2
    Electronic Resource
    Electronic Resource
    Codiffusion of arsenic and phosphorus implanted in silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5005-5012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The codiffusion of arsenic and phosphorus implanted in silicon has been investigated after annealing at 900 and 1000 °C for different concentrations of the dopants. Analysis of the profiles was performed using secondary-ion-mass spectroscopy, junction staining, and incremental resistivity and Hall measurements. The results do not evidence any direct interaction between the dopants. All the observed anomalous effects of the codiffusion, compared with the diffusion of the single elements by themselves, seem to be justifiable on the basis of the interactions between the dopants and the defects produced by ion implantation. In addition, it has been observed that the presence of a high concentration of As atoms makes the annealing of the implantation damage faster and strongly reduces the P transient-enhanced diffusion. This effect favors the fabrication of graded shallow junctions with a high-surface-carrier concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354306
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  • 3
    Electronic Resource
    Electronic Resource
    Boron ion implantation through Mo and Mo silicide layers for shallow junction formation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3962-3967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molybdenum silicide is investigated because of its possible application in a self-aligned process for ultra large scale integration technology. p+/n shallow junctions are fabricated by boron implantation through Mo films or MoSi2 layers and rapid thermal annealing. Both procedures enable us to obtain junctions as shallow as 130 nm with very good electrical characteristics (reverse current density 1 nA/cm2 at −1 V, ideality factor 1.05 and contact resistivity 1×10−6 Ω cm2). The influence of a surface preamorphization with different thicknesses on junction depth and electrical characteristics is reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348457
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  • 4
    Electronic Resource
    Electronic Resource
    Diffusion of boron in silicon during post-implantation annealing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2135-2142 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of B implanted in Si has been investigated at different concentrations in a wide range of experimental conditions (temperature from 800 to 1000 °C and time from 10 s to 8 h) by using furnace and rapid thermal treatments. In particular, the transient enhanced diffusion induced by the implantation damage in the early phase of the annealing and the precipitation occurring in concomitance with the diffusion for dopant concentration exceeding the solid solubility have been extensively analyzed. A simulation program taking these phenomena into account has been developed by modifying the supreme iii code. A satisfactory agreement with experimental data has been obtained for all the investigated conditions. The model represents a significative improvement of the diffusion simulation of B implanted in crystalline Si. In fact, the more commonly used codes of process simulation do not evaluate adequately the effects of the above considered phenomena.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348740
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  • 5
    Electronic Resource
    Electronic Resource
    Grain boundary segregation of oxygen and carbon in polycrystalline silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 676-678 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical activity of grain boundaries (GB's) in polycrystalline silicon is strongly affected by heat treatments, which are known to induce the segregation of oxygen. The large, quantitative variations of the electrical activity of GB's observed experimentally, which are a function not only of the heat treatments but also of the carbon and oxygen content of the specific sample examined, could not be explained however, without assuming that carbon and oxygen play a synergistic role. We demonstrate in this work, by using secondary ion mass spectrometry, that oxygen and carbon segregate simultaneously, albeit spatially resolved, at grain boundaries. This result appears to be of major importance when interpreting electron or light beam induced current profiles at grain boundaries in polycrystalline silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98331
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  • 6
    Electronic Resource
    Electronic Resource
    Anomalous diffusion of fluorine in silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1310-1312 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of ion implanted F in Si has been studied by the use of secondary ion mass spectroscopy and thermal desorption spectroscopy. In the dose range studied (below amorphization threshold), F exhibits an anomalous out-diffusion behavior which is characterized by the depletion of F in Si substrate at temperatures ≥550 °C with complete suppression of diffusion deeper into the bulk of Si. F species which migrate to the surface react with native oxide and Si to form volatile Si oxyfluoride and Si fluoride, which then evaporate from the surface. There is clear evidence that the formation of Si oxyfluoride correlates strongly with the thermally activated anomalous migration of F. While the driving force for the anomalous F migration has not yet been identified, it appears that the electric field is not a dominant mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107575
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